component
ZXTN4240F-7
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ZXTN4240F-7
Diodes Incorporated · Bipolar Transistors - BJT · SOT-23
ZXTN4240F-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 5V, IBM peak base current max 0.3A. |
| 2 | E | passive | Emitter of the NPN transistor. |
| 3 | C | passive | Collector of the NPN transistor; VCEO 40V, VCBO 40V, IC 2A continuous, ICM 3A peak. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 40 | V | IC = 100µA | 4 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 40 | V | IC = 10mA | 4 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 5 | V | IE = 100µA | 4 | ||
| Collector-Base Cutoff Current | ICBO | 100 | nA | VCB = 30V, IE = 0 | 4 | ||
| Collector-Base Cutoff Current | ICBO | 50 | µA | VCB = 30V, IE = 0, TA = +150°C | 4 | ||
| Emitter-Base Cutoff Current | IEBO | 100 | nA | VEB = 4V, IC = 0 | 4 | ||
| DC Current Gain | hFE | 350 | VCE = 2V, IC = 0.1A | 4 | |||
| DC Current Gain | hFE | 300 | VCE = 2V, IC = 0.5A | 4 | |||
| DC Current Gain | hFE | 150 | VCE = 2V, IC = 2A | 4 | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 70 | mV | IC = 100mA, IB = 1mA | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 30 | 100 | mV | IC = 500mA, IB = 50mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 180 | mV | IC = 750mA, IB = 15mA | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 320 | mV | IC = 2A, IB = 200mA | 4 | ||
| Equivalent On-Resistance | RCE(SAT) | 60 | 200 | mΩ | IC = 500mA, IB = 50mA | 4 | |
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.1 | V | IC = 2A, IB = 200mA | 4 | ||
| Base-Emitter Turn-On Voltage | VBE(ON) | 0.75 | V | VCE = 2V, IC = 100mA | 4 | ||
| Transition Frequency | fT | 100 | MHz | VCE = 10V, IC = 100mA, f = 100MHz | 4 | ||
| Output Capacitance | COB | 20 | pF | VCB = 10V, f = 1MHz | 4 | ||
| Turn-On Time | tON | 43 | ns | IC =500mA, VCC=10V, IB1 = -IB2 = 50mA | 4 | ||
| Turn-Off Time | tOFF | 363 | ns | IC =500mA, VCC=10V, IB1 = -IB2 = 50mA | 4 | ||
| Collector-Base Voltage | VCBO | 40 | V | TA = +25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | 40 | V | TA = +25°C | 2 | ||
| Emitter-Base Voltage | VEBO | 5 | V | TA = +25°C | 2 | ||
| Peak Pulse Collector Current | ICM | 3 | A | TA = +25°C | 2 | ||
| Continuous Collector Current | IC | 2 | A | TA = +25°C | 2 | ||
| Peak Base Current | IBM | 0.3 | A | TA = +25°C | 2 | ||
| Power Dissipation (Note 5) | PD | 730 | mW | TA = +25°C, 15mm x 15mm 1oz copper | 2 | ||
| Power Dissipation (Note 6) | PD | 600 | mW | TA = +25°C, minimum recommended pad layout | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Ambient Air (Note 5) | RθJA | 171 | °C/W | 15mm x 15mm 1oz copper, still air | 2 | ||
| Thermal Resistance, Junction to Ambient Air (Note 6) | RθJA | 209 | °C/W | minimum recommended pad layout | 2 | ||
| Thermal Resistance, Junction to Lead (Note 7) | RθJL | 75 | °C/W | 2 | |||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A | 2 | ||
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish, Matte Tin Plated Leads. Solderable per MILSTD-202, Method 208 Weight: 0.008 grams (Approximate) | 1 |
CAD (KiCad official)
- Symbol:
ZXTN4240F-7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
zxtn4240f-7-etched.step/zxtn4240f-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxtn4240f-7.step/zxtn4240f-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
83904f8f935f548f, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ZXTN4240F-7
**Diodes Incorporated** · Bipolar Transistors - BJT · SOT-23
ZXTN4240F-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 5V, IBM peak base current max 0.3A. |
| 2 | E | passive | Emitter of the NPN transistor. |
| 3 | C | passive | Collector of the NPN transistor; VCEO 40V, VCBO 40V, IC 2A continuous, ICM 3A peak. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 40 | | | V | IC = 100µA | 4 |
| Collector-Emitter Breakdown Voltage | BVCEO | 40 | | | V | IC = 10mA | 4 |
| Emitter-Base Breakdown Voltage | BVEBO | 5 | | | V | IE = 100µA | 4 |
| Collector-Base Cutoff Current | ICBO | | | 100 | nA | VCB = 30V, IE = 0 | 4 |
| Collector-Base Cutoff Current | ICBO | | | 50 | µA | VCB = 30V, IE = 0, TA = +150°C | 4 |
| Emitter-Base Cutoff Current | IEBO | | | 100 | nA | VEB = 4V, IC = 0 | 4 |
| DC Current Gain | hFE | 350 | | | | VCE = 2V, IC = 0.1A | 4 |
| DC Current Gain | hFE | 300 | | | | VCE = 2V, IC = 0.5A | 4 |
| DC Current Gain | hFE | 150 | | | | VCE = 2V, IC = 2A | 4 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 70 | mV | IC = 100mA, IB = 1mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | 30 | 100 | mV | IC = 500mA, IB = 50mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 180 | mV | IC = 750mA, IB = 15mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 320 | mV | IC = 2A, IB = 200mA | 4 |
| Equivalent On-Resistance | RCE(SAT) | | 60 | 200 | mΩ | IC = 500mA, IB = 50mA | 4 |
| Base-Emitter Saturation Voltage | VBE(SAT) | | | 1.1 | V | IC = 2A, IB = 200mA | 4 |
| Base-Emitter Turn-On Voltage | VBE(ON) | | | 0.75 | V | VCE = 2V, IC = 100mA | 4 |
| Transition Frequency | fT | 100 | | | MHz | VCE = 10V, IC = 100mA, f = 100MHz | 4 |
| Output Capacitance | COB | | | 20 | pF | VCB = 10V, f = 1MHz | 4 |
| Turn-On Time | tON | | 43 | | ns | IC =500mA, VCC=10V, IB1 = -IB2 = 50mA | 4 |
| Turn-Off Time | tOFF | | 363 | | ns | IC =500mA, VCC=10V, IB1 = -IB2 = 50mA | 4 |
| Collector-Base Voltage | VCBO | | | 40 | V | TA = +25°C | 2 |
| Collector-Emitter Voltage | VCEO | | | 40 | V | TA = +25°C | 2 |
| Emitter-Base Voltage | VEBO | | | 5 | V | TA = +25°C | 2 |
| Peak Pulse Collector Current | ICM | | | 3 | A | TA = +25°C | 2 |
| Continuous Collector Current | IC | | | 2 | A | TA = +25°C | 2 |
| Peak Base Current | IBM | | | 0.3 | A | TA = +25°C | 2 |
| Power Dissipation (Note 5) | PD | | | 730 | mW | TA = +25°C, 15mm x 15mm 1oz copper | 2 |
| Power Dissipation (Note 6) | PD | | | 600 | mW | TA = +25°C, minimum recommended pad layout | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Thermal Resistance, Junction to Ambient Air (Note 5) | RθJA | | 171 | | °C/W | 15mm x 15mm 1oz copper, still air | 2 |
| Thermal Resistance, Junction to Ambient Air (Note 6) | RθJA | | 209 | | °C/W | minimum recommended pad layout | 2 |
| Thermal Resistance, Junction to Lead (Note 7) | RθJL | | 75 | | °C/W | | 2 |
| Electrostatic Discharge - Human Body Model | ESD HBM | | | 4000 | V | JEDEC Class 3A | 2 |
| Electrostatic Discharge - Machine Model | ESD MM | | | 400 | V | JEDEC Class C | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | Terminals: Finish, Matte Tin Plated Leads. Solderable per MILSTD-202, Method 208 Weight: 0.008 grams (Approximate) | 1 |
## CAD (KiCad official)
- Symbol: `ZXTN4240F-7`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `zxtn4240f-7-etched.step` / `zxtn4240f-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxtn4240f-7.step` / `zxtn4240f-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/ZXTN4240F-7.pdf) (7 pp, sha256 `83904f8f935f548f`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/zxtn4240f-7-datasheet.pdf)