main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 3h ago
viewers zxtn4240f-7: viewers · Ray 3h ago
package.json Publish 0.1.0 · Ray 3h ago
page.json Set visibility: public · Ray 3h ago
README.md Publish 0.1.0 · Ray 3h ago
zxtn4240f-7-etched.glb Publish 0.1.0 · Ray 3h ago
zxtn4240f-7-etched.step zxtn4240f-7: factory component page (tier=mfr) · Ray 3h ago
zxtn4240f-7-hero.glb zxtn4240f-7: hero GLB from the etched model (keeps the MPN mark) · Ray 3h ago
zxtn4240f-7-hero.overlay.json Publish 0.1.0 · Ray 3h ago
zxtn4240f-7.glb Publish 0.1.0 · Ray 3h ago
zxtn4240f-7.kicad_mod Publish 0.1.0 · Ray 3h ago
zxtn4240f-7.kicad_sym Publish 0.1.0 · Ray 3h ago
zxtn4240f-7.lbr Publish 0.1.0 · Ray 3h ago
zxtn4240f-7.step Publish 0.1.0 · Ray 3h ago

ZXTN4240F-7

Diodes Incorporated · Bipolar Transistors - BJT · SOT-23

ZXTN4240F-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; VEBO max 5V, IBM peak base current max 0.3A.
2 E passive Emitter of the NPN transistor.
3 C passive Collector of the NPN transistor; VCEO 40V, VCBO 40V, IC 2A continuous, ICM 3A peak.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO 40 V IC = 100µA 4
Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 10mA 4
Emitter-Base Breakdown Voltage BVEBO 5 V IE = 100µA 4
Collector-Base Cutoff Current ICBO 100 nA VCB = 30V, IE = 0 4
Collector-Base Cutoff Current ICBO 50 µA VCB = 30V, IE = 0, TA = +150°C 4
Emitter-Base Cutoff Current IEBO 100 nA VEB = 4V, IC = 0 4
DC Current Gain hFE 350 VCE = 2V, IC = 0.1A 4
DC Current Gain hFE 300 VCE = 2V, IC = 0.5A 4
DC Current Gain hFE 150 VCE = 2V, IC = 2A 4
Collector-Emitter Saturation Voltage VCE(SAT) 70 mV IC = 100mA, IB = 1mA 4
Collector-Emitter Saturation Voltage VCE(SAT) 30 100 mV IC = 500mA, IB = 50mA 4
Collector-Emitter Saturation Voltage VCE(SAT) 180 mV IC = 750mA, IB = 15mA 4
Collector-Emitter Saturation Voltage VCE(SAT) 320 mV IC = 2A, IB = 200mA 4
Equivalent On-Resistance RCE(SAT) 60 200 mΩ IC = 500mA, IB = 50mA 4
Base-Emitter Saturation Voltage VBE(SAT) 1.1 V IC = 2A, IB = 200mA 4
Base-Emitter Turn-On Voltage VBE(ON) 0.75 V VCE = 2V, IC = 100mA 4
Transition Frequency fT 100 MHz VCE = 10V, IC = 100mA, f = 100MHz 4
Output Capacitance COB 20 pF VCB = 10V, f = 1MHz 4
Turn-On Time tON 43 ns IC =500mA, VCC=10V, IB1 = -IB2 = 50mA 4
Turn-Off Time tOFF 363 ns IC =500mA, VCC=10V, IB1 = -IB2 = 50mA 4
Collector-Base Voltage VCBO 40 V TA = +25°C 2
Collector-Emitter Voltage VCEO 40 V TA = +25°C 2
Emitter-Base Voltage VEBO 5 V TA = +25°C 2
Peak Pulse Collector Current ICM 3 A TA = +25°C 2
Continuous Collector Current IC 2 A TA = +25°C 2
Peak Base Current IBM 0.3 A TA = +25°C 2
Power Dissipation (Note 5) PD 730 mW TA = +25°C, 15mm x 15mm 1oz copper 2
Power Dissipation (Note 6) PD 600 mW TA = +25°C, minimum recommended pad layout 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Thermal Resistance, Junction to Ambient Air (Note 5) RθJA 171 °C/W 15mm x 15mm 1oz copper, still air 2
Thermal Resistance, Junction to Ambient Air (Note 6) RθJA 209 °C/W minimum recommended pad layout 2
Thermal Resistance, Junction to Lead (Note 7) RθJL 75 °C/W 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC Class C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish, Matte Tin Plated Leads. Solderable per MIL￾STD-202, Method 208  Weight: 0.008 grams (Approximate) 1

CAD (KiCad official)

  • Symbol: ZXTN4240F-7
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: zxtn4240f-7-etched.step / zxtn4240f-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtn4240f-7.step / zxtn4240f-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 83904f8f935f548f, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF