# ZXTN25040DFHTA

**Diodes Incorporated** · Bipolar (BJT) · SOT-23

ZXTN25040DFHTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; IB max 1A, VEBO 7V max, and hFE is characterised at IC up to 10A. |
| 2 | E | passive | Emitter of the NPN transistor; reverse blocking voltage VECO is 6V min and VEBO is 7V. |
| 3 | C | passive | Collector of the NPN transistor; VCEO 40V, VCBO/VCEX 130V, continuous IC 4A, peak ICM 10A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 130 | 170 |  | V | IC = 100µA | 4 |
| Collector-emitter breakdown voltage (forward blocking) | BVCEX | 130 | 170 |  | V | IC = 100µA; RBE < 1kΩ or -1V < VBE < 0.25V | 4 |
| Collector-Emitter Breakdown Voltage (base open) | BVCEO | 40 | 63 |  | V | IC = 10mA | 4 |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | 8.3 |  | V | IE = 100µA | 4 |
| Emitter-collector breakdown voltage (reverse blocking) | BVECX | 6 | 7.4 |  | V | IE = 100µA; RBC < 1kΩ or -0.25V < VBC < 0.25V | 4 |
| Emitter-collector breakdown voltage (base open) | BVECO | 6 | 7.4 |  | V | IE = 100µA | 4 |
| Collector-base Cut-off Current | ICBO |  |  | 50 | nA | VCB = 100V | 4 |
| Collector-base Cut-off Current | ICBO |  |  | 20 | µA | VCB = 100V, TA = 100°C | 4 |
| Collector-emitter Cut-off Current | ICEX |  |  | 100 | nA | VCE = 100V; RBE < 1kΩ or -1V < VBE < 0.25V | 4 |
| Emitter-base Cut-off Current | IEBO |  |  | 50 | nA | VEB = 5.6V | 4 |
| Static Forward Current Transfer Ratio | hFE | 300 | 450 | 900 |  | IC = 10mA, VCE = 2V | 4 |
| Static Forward Current Transfer Ratio | hFE | 300 | 450 |  |  | IC = 1A, VCE = 2V | 4 |
| Static Forward Current Transfer Ratio | hFE | 30 | 60 |  |  | IC = 4A, VCE = 2V | 4 |
| Static Forward Current Transfer Ratio | hFE |  | 10 |  |  | IC = 10A, VCE = 2V | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | 45 | 55 | mV | IC = 1A, IB = 100mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | 120 | 210 | mV | IC = 1A, IB = 10mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | 135 | 210 | mV | IC = 2A, IB = 40mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | 140 | 190 | mV | IC = 4A, IB = 400mA | 4 |
| Base-Emitter Saturation Voltage | VBE(sat) |  | 960 | 1050 | mV | IC = 4A, IB = 400mA | 4 |
| Base-Emitter On Voltage | VBE(on) |  | 840 | 950 | mV | IC = 4A, VCE = 2V | 4 |
| Collector Output Capacitance | Cobo |  | 11.7 | 20 | pF | VCB = 10V, f = 1MHz | 4 |
| Collector-Base Voltage | VCBO |  |  | 130 | V |  | 2 |
| Collector-Emitter Voltage (Forward Blocking) | VCEX |  |  | 130 | V |  | 2 |
| Collector-Emitter Voltage | VCEO |  |  | 40 | V |  | 2 |
| Emitter-Collector Voltage (Reverse Blocking) | VECO |  |  | 6 | V |  | 2 |
| Emitter-Base Voltage | VEBO |  |  | 7 | V |  | 2 |
| Continuous Collector Current | IC |  |  | 4 | A | Note 6 | 2 |
| Peak Pulse Current | ICM |  |  | 10 | A |  | 2 |
| Base Current | IB |  |  | 1 | A |  | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |
| Power Dissipation | PD |  | 0.73 |  | W | Note 4: 15mm x 15mm x 1.6mm FR4, 1oz Cu, still air, steady state | 2 |
| Power Dissipation | PD |  | 1.05 |  | W | Note 5: 25mm x 25mm x 1.6mm FR4, 2oz Cu, still air, steady state | 2 |
| Power Dissipation | PD |  | 1.25 |  | W | Note 6: 50mm x 50mm x 1.6mm FR4, 2oz Cu, still air, steady state | 2 |
| Power Dissipation | PD |  | 1.81 |  | W | Note 7: as Note 6, measured at t < 5 seconds | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 171 |  | °C/W | Note 4: 15mm x 15mm x 1.6mm FR4, 1oz Cu, still air, steady state | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 119 |  | °C/W | Note 5: 25mm x 25mm x 1.6mm FR4, 2oz Cu, still air, steady state | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 100 |  | °C/W | Note 6: 50mm x 50mm x 1.6mm FR4, 2oz Cu, still air, steady state | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 69 |  | °C/W | Note 7: as Note 6, measured at t < 5 seconds | 2 |
| Thermal Resistance, Junction to Lead | RθJL |  | 74.95 |  | °C/W | Note 8: junction to solder point at end of collector lead | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts |  | tin | • Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208 | 1 |

## CAD (KiCad official)

- Symbol: `ZXTN25040DFHTA`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `zxtn25040dfhta-etched.step` / `zxtn25040dfhta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxtn25040dfhta.step` / `zxtn25040dfhta.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586189349239607296) (7 pp, sha256 `be45d2e8816841d6`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/zxtn25040dfhta-datasheet.pdf)