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ZXTN25040DFHTA

Public Made by Adom

by adom

Diodes Incorporated Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ZXTN25040DFHTA

Diodes Incorporated · Bipolar (BJT) · SOT-23

ZXTN25040DFHTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; IB max 1A, VEBO 7V max, and hFE is characterised at IC up to 10A.
2 E passive Emitter of the NPN transistor; reverse blocking voltage VECO is 6V min and VEBO is 7V.
3 C passive Collector of the NPN transistor; VCEO 40V, VCBO/VCEX 130V, continuous IC 4A, peak ICM 10A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO 130 170 V IC = 100µA 4
Collector-emitter breakdown voltage (forward blocking) BVCEX 130 170 V IC = 100µA; RBE < 1kΩ or -1V < VBE < 0.25V 4
Collector-Emitter Breakdown Voltage (base open) BVCEO 40 63 V IC = 10mA 4
Emitter-Base Breakdown Voltage BVEBO 7 8.3 V IE = 100µA 4
Emitter-collector breakdown voltage (reverse blocking) BVECX 6 7.4 V IE = 100µA; RBC < 1kΩ or -0.25V < VBC < 0.25V 4
Emitter-collector breakdown voltage (base open) BVECO 6 7.4 V IE = 100µA 4
Collector-base Cut-off Current ICBO 50 nA VCB = 100V 4
Collector-base Cut-off Current ICBO 20 µA VCB = 100V, TA = 100°C 4
Collector-emitter Cut-off Current ICEX 100 nA VCE = 100V; RBE < 1kΩ or -1V < VBE < 0.25V 4
Emitter-base Cut-off Current IEBO 50 nA VEB = 5.6V 4
Static Forward Current Transfer Ratio hFE 300 450 900 IC = 10mA, VCE = 2V 4
Static Forward Current Transfer Ratio hFE 300 450 IC = 1A, VCE = 2V 4
Static Forward Current Transfer Ratio hFE 30 60 IC = 4A, VCE = 2V 4
Static Forward Current Transfer Ratio hFE 10 IC = 10A, VCE = 2V 4
Collector-Emitter Saturation Voltage VCE(sat) 45 55 mV IC = 1A, IB = 100mA 4
Collector-Emitter Saturation Voltage VCE(sat) 120 210 mV IC = 1A, IB = 10mA 4
Collector-Emitter Saturation Voltage VCE(sat) 135 210 mV IC = 2A, IB = 40mA 4
Collector-Emitter Saturation Voltage VCE(sat) 140 190 mV IC = 4A, IB = 400mA 4
Base-Emitter Saturation Voltage VBE(sat) 960 1050 mV IC = 4A, IB = 400mA 4
Base-Emitter On Voltage VBE(on) 840 950 mV IC = 4A, VCE = 2V 4
Collector Output Capacitance Cobo 11.7 20 pF VCB = 10V, f = 1MHz 4
Collector-Base Voltage VCBO 130 V 2
Collector-Emitter Voltage (Forward Blocking) VCEX 130 V 2
Collector-Emitter Voltage VCEO 40 V 2
Emitter-Collector Voltage (Reverse Blocking) VECO 6 V 2
Emitter-Base Voltage VEBO 7 V 2
Continuous Collector Current IC 4 A Note 6 2
Peak Pulse Current ICM 10 A 2
Base Current IB 1 A 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Power Dissipation PD 0.73 W Note 4: 15mm x 15mm x 1.6mm FR4, 1oz Cu, still air, steady state 2
Power Dissipation PD 1.05 W Note 5: 25mm x 25mm x 1.6mm FR4, 2oz Cu, still air, steady state 2
Power Dissipation PD 1.25 W Note 6: 50mm x 50mm x 1.6mm FR4, 2oz Cu, still air, steady state 2
Power Dissipation PD 1.81 W Note 7: as Note 6, measured at t < 5 seconds 2
Thermal Resistance, Junction to Ambient RθJA 171 °C/W Note 4: 15mm x 15mm x 1.6mm FR4, 1oz Cu, still air, steady state 2
Thermal Resistance, Junction to Ambient RθJA 119 °C/W Note 5: 25mm x 25mm x 1.6mm FR4, 2oz Cu, still air, steady state 2
Thermal Resistance, Junction to Ambient RθJA 100 °C/W Note 6: 50mm x 50mm x 1.6mm FR4, 2oz Cu, still air, steady state 2
Thermal Resistance, Junction to Ambient RθJA 69 °C/W Note 7: as Note 6, measured at t < 5 seconds 2
Thermal Resistance, Junction to Lead RθJL 74.95 °C/W Note 8: junction to solder point at end of collector lead 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: ZXTN25040DFHTA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: zxtn25040dfhta-etched.step / zxtn25040dfhta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtn25040dfhta.step / zxtn25040dfhta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 be45d2e8816841d6, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF