# ZXTN25015DFHTA

**Diodes Incorporated** · Bipolar (BJT) · SOT-23

ZXTN25015DFHTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max is 7 V and the datasheet lists BVEBO of 7 V min. |
| 2 | E | passive | Emitter of the NPN transistor; continuous collector current is rated at 5 A (peak pulse current 15 A). |
| 3 | C | passive | Collector of the NPN transistor; VCEO max is 15 V, VCBO max is 40 V and VCEX max is 30 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | BVCEO | 15 | 22 |  | V | IC = 10mA (*) pulsed | 4 |
| Collector-emitter breakdown voltage (reverse blocking) | BVECX | 6 | 8 |  | V | IE = 100µA, RBC < 1k or 0.25V > VBC > -0.25V | 4 |
| Collector-emitter breakdown voltage (reverse blocking) | BVECO | 4.5 | 5.3 |  | V | IE = 100µA | 4 |
| Emitter-base breakdown voltage | BVEBO | 7 | 8.2 |  | V | IE = 100µA | 4 |
| Collector cut-off current | ICBO |  |  | 50 | nA | VCB = 40V | 4 |
| Collector cut-off current | ICBO |  |  | 20 | µA | VCB = 40V, Tamb = 100°C | 4 |
| Collector-emitter cut-off current | ICEX |  |  | 100 | nA | VCE = 30V; RBE < 1k or -1V < VBE < 0.25V | 4 |
| Emitter cut-off current | IEBO |  |  | 50 | nA | VEB = 5.6V | 4 |
| Collector-emitter saturation voltage | VCE(sat) |  | 30 | 40 | mV | IC = 1A, IB = 100mA (*) | 4 |
| Collector-emitter saturation voltage | VCE(sat) |  | 60 | 80 | mV | IC = 1A, IB = 10mA (*) | 4 |
| Collector-emitter saturation voltage | VCE(sat) |  | 90 | 125 | mV | IC = 2A, IB = 20mA (*) | 4 |
| Collector-emitter saturation voltage | VCE(sat) |  | 125 | 155 | mV | IC = 5A, IB = 500mA (*) | 4 |
| Collector-emitter saturation voltage | VCE(sat) |  | 160 | 215 | mV | IC = 5A, IB = 100mA (*) | 4 |
| Base-emitter saturation voltage | VBE(sat) |  | 990 | 1090 | mV | IC = 5A, IB = 500mA (*) | 4 |
| Base-emitter turn-on voltage | VBE(on) |  | 805 | 900 | mV | IC = 5A, VCE = 2V (*) | 4 |
| Static forward current transfer ratio | hFE | 300 | 450 | 900 |  | IC = 10mA, VCE = 2V (*) | 4 |
| Static forward current transfer ratio | hFE | 300 | 400 |  |  | IC = 2A, VCE = 2V (*) | 4 |
| Static forward current transfer ratio | hFE | 150 | 275 |  |  | IC = 5A, VCE = 2V (*) | 4 |
| Static forward current transfer ratio | hFE | 25 | 40 |  |  | IC = 15A, VCE = 2V (*) | 4 |
| Transition frequency | fT | 150 | 240 |  | MHz | IC = 50mA, VCE = 10V, f = 50MHz | 4 |
| Output capacitance | COBO |  | 22.7 | 30 | pF | VCB = 10V, f = 1MHz (*) | 4 |
| Collector-base voltage | VCBO |  |  | 40 | V |  | 2 |
| Collector-emitter voltage (forward blocking) | VCEX |  |  | 30 | V |  | 2 |
| Collector-emitter voltage | VCEO |  |  | 15 | V |  | 2 |
| Emitter-collector voltage (reverse blocking) | VECO |  |  | 4.5 | V |  | 2 |
| Emitter-base voltage | VEBO |  |  | 7 | V |  | 2 |
| Continuous collector current | IC |  |  | 5 | A | Note (c): 50mm x 50mm x 1.6mm FR4, 2oz Cu, still air | 2 |
| Peak pulse current | ICM |  |  | 15 | A |  | 2 |
| Power dissipation at Tamb = 25°C | PD |  |  | 0.73 | W | Tamb = 25°C; note (a): 15mm x 15mm x 1.6mm FR4, 1oz Cu, still air | 2 |
| Power dissipation at Tamb = 25°C | PD |  |  | 1.05 | W | Tamb = 25°C; note (b): 25mm x 25mm x 1.6mm FR4, 2oz Cu, still air | 2 |
| Power dissipation at Tamb = 25°C | PD |  |  | 1.25 | W | Tamb = 25°C; note (c): 50mm x 50mm x 1.6mm FR4, 2oz Cu, still air | 2 |
| Power dissipation at Tamb = 25°C | PD |  |  | 1.81 | W | Tamb = 25°C; note (d): as (c), measured at t < 5 s | 2 |
| Operating and storage temperature range | Tj, Tstg | -55 |  | 150 | °C |  | 2 |
| Junction to ambient | RJA |  |  | 171 | °C/W | Note (a): 15mm x 15mm x 1.6mm FR4, 1oz Cu, still air | 2 |
| Junction to ambient | RJA |  |  | 119 | °C/W | Note (b): 25mm x 25mm x 1.6mm FR4, 2oz Cu, still air | 2 |
| Junction to ambient | RJA |  |  | 100 | °C/W | Note (c): 50mm x 50mm x 1.6mm FR4, 2oz Cu, still air | 2 |
| Junction to ambient | RJA |  |  | 69 | °C/W | Note (d): as (c), measured at t < 5 s | 2 |

## CAD (KiCad official)

- Symbol: `ZXTN25015DFHTA`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `zxtn25015dfhta-etched.step` / `zxtn25015dfhta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxtn25015dfhta.step` / `zxtn25015dfhta.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586187006003056640) (6 pp, sha256 `8ff7a306d382e95e`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/zxtn25015dfhta-datasheet.pdf)