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ZXTN25015DFHTA

Public Made by Adom

by adom

Diodes Incorporated Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ZXTN25015DFHTA

Diodes Incorporated · Bipolar (BJT) · SOT-23

ZXTN25015DFHTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; VEBO max is 7 V and the datasheet lists BVEBO of 7 V min.
2 E passive Emitter of the NPN transistor; continuous collector current is rated at 5 A (peak pulse current 15 A).
3 C passive Collector of the NPN transistor; VCEO max is 15 V, VCBO max is 40 V and VCEX max is 30 V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage BVCEO 15 22 V IC = 10mA (*) pulsed 4
Collector-emitter breakdown voltage (reverse blocking) BVECX 6 8 V IE = 100µA, RBC < 1k or 0.25V > VBC > -0.25V 4
Collector-emitter breakdown voltage (reverse blocking) BVECO 4.5 5.3 V IE = 100µA 4
Emitter-base breakdown voltage BVEBO 7 8.2 V IE = 100µA 4
Collector cut-off current ICBO 50 nA VCB = 40V 4
Collector cut-off current ICBO 20 µA VCB = 40V, Tamb = 100°C 4
Collector-emitter cut-off current ICEX 100 nA VCE = 30V; RBE < 1k or -1V < VBE < 0.25V 4
Emitter cut-off current IEBO 50 nA VEB = 5.6V 4
Collector-emitter saturation voltage VCE(sat) 30 40 mV IC = 1A, IB = 100mA (*) 4
Collector-emitter saturation voltage VCE(sat) 60 80 mV IC = 1A, IB = 10mA (*) 4
Collector-emitter saturation voltage VCE(sat) 90 125 mV IC = 2A, IB = 20mA (*) 4
Collector-emitter saturation voltage VCE(sat) 125 155 mV IC = 5A, IB = 500mA (*) 4
Collector-emitter saturation voltage VCE(sat) 160 215 mV IC = 5A, IB = 100mA (*) 4
Base-emitter saturation voltage VBE(sat) 990 1090 mV IC = 5A, IB = 500mA (*) 4
Base-emitter turn-on voltage VBE(on) 805 900 mV IC = 5A, VCE = 2V (*) 4
Static forward current transfer ratio hFE 300 450 900 IC = 10mA, VCE = 2V (*) 4
Static forward current transfer ratio hFE 300 400 IC = 2A, VCE = 2V (*) 4
Static forward current transfer ratio hFE 150 275 IC = 5A, VCE = 2V (*) 4
Static forward current transfer ratio hFE 25 40 IC = 15A, VCE = 2V (*) 4
Transition frequency fT 150 240 MHz IC = 50mA, VCE = 10V, f = 50MHz 4
Output capacitance COBO 22.7 30 pF VCB = 10V, f = 1MHz (*) 4
Collector-base voltage VCBO 40 V 2
Collector-emitter voltage (forward blocking) VCEX 30 V 2
Collector-emitter voltage VCEO 15 V 2
Emitter-collector voltage (reverse blocking) VECO 4.5 V 2
Emitter-base voltage VEBO 7 V 2
Continuous collector current IC 5 A Note (c): 50mm x 50mm x 1.6mm FR4, 2oz Cu, still air 2
Peak pulse current ICM 15 A 2
Power dissipation at Tamb = 25°C PD 0.73 W Tamb = 25°C; note (a): 15mm x 15mm x 1.6mm FR4, 1oz Cu, still air 2
Power dissipation at Tamb = 25°C PD 1.05 W Tamb = 25°C; note (b): 25mm x 25mm x 1.6mm FR4, 2oz Cu, still air 2
Power dissipation at Tamb = 25°C PD 1.25 W Tamb = 25°C; note (c): 50mm x 50mm x 1.6mm FR4, 2oz Cu, still air 2
Power dissipation at Tamb = 25°C PD 1.81 W Tamb = 25°C; note (d): as (c), measured at t < 5 s 2
Operating and storage temperature range Tj, Tstg -55 150 °C 2
Junction to ambient RJA 171 °C/W Note (a): 15mm x 15mm x 1.6mm FR4, 1oz Cu, still air 2
Junction to ambient RJA 119 °C/W Note (b): 25mm x 25mm x 1.6mm FR4, 2oz Cu, still air 2
Junction to ambient RJA 100 °C/W Note (c): 50mm x 50mm x 1.6mm FR4, 2oz Cu, still air 2
Junction to ambient RJA 69 °C/W Note (d): as (c), measured at t < 5 s 2

CAD (KiCad official)

  • Symbol: ZXTN25015DFHTA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: zxtn25015dfhta-etched.step / zxtn25015dfhta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtn25015dfhta.step / zxtn25015dfhta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 8ff7a306d382e95e, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF