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ZXTN2010ZQTA

Public Made by Adom

by adom

Diodes Incorporated Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ZXTN2010ZQTA

Diodes Incorporated · Bipolar (BJT) · SOT-89

ZXTN2010ZQTA from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; drive terminal, with VCE(sat) < 65mV at IC = 1A, IB = 50mA and VEBO rating of 7V.
2 C passive Collector, also connected to the exposed collector tab; VCEO 60V, VCBO 150V, continuous IC 5A and peak ICM 20A.
3 E passive Emitter; current return terminal of the NPN transistor, VEBO rating 7V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 150 V 2
Collector-Emitter Voltage VCEO 60 V 2
Emitter-Base Voltage VEBO 7 V 2
Base Current IB 2 A 2
Continuous Collector Current IC 5 A 2
Peak Pulse Current ICM 20 A 2
Power Dissipation PD 1.5 W Note 5: 25mm x 25mm 1oz Cu, single-sided 1.6mm FR-4, still air, TA=25°C 2
Power Dissipation PD 2.1 W Note 6: 50mm x 50mm 1oz Cu, TA=25°C 2
Linear Derating Factor PD 12 mW/°C Note 5 mounting 2
Linear Derating Factor PD 16.8 mW/°C Note 6 mounting 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC Class C 2
Collector-Base Breakdown Voltage BVCBO 150 190 V IC = 100µA 4
Collector-Emitter Breakdown Voltage (Note 9) BVCER 150 190 V IC = 1µA, RB ≤ 1kΩ 4
Collector-Emitter Breakdown Voltage (Note 9) BVCEO 60 80 V IC = 10mA 4
Emitter-Base Breakdown Voltage BVEBO 7 8.1 V IE = 100µA 4
Collector Cutoff Current ICBO 50 nA VCB = 120V 4
Collector Cutoff Current ICBO 500 nA VCB = 120V, TA = +100°C 4
Collector Cutoff Current ICER 100 nA R ≤ 1kΩ, VCB = 120V 4
Emitter Cutoff Current IEBO 10 nA VEB = 6V 4
DC Current Transfer Static Ratio (Note 9) hFE 100 200 IC = 10mA, VCE = 1V 4
DC Current Transfer Static Ratio (Note 9) hFE 100 200 300 IC = 2A, VCE = 1V 4
DC Current Transfer Static Ratio (Note 9) hFE 55 105 IC = 5A, VCE = 1V 4
DC Current Transfer Static Ratio (Note 9) hFE 20 40 IC = 10A, VCE = 1V 4
Collector-Emitter Saturation Voltage (Note 9) VCE(sat) 17 30 mV IC = 100mA, IB = 5mA 4
Collector-Emitter Saturation Voltage (Note 9) VCE(sat) 35 55 mV IC = 1A, IB = 100mA 4
Collector-Emitter Saturation Voltage (Note 9) VCE(sat) 40 65 mV IC = 1A, IB = 50mA 4
Collector-Emitter Saturation Voltage (Note 9) VCE(sat) 90 125 mV IC = 2A, IB = 50mA 4
Collector-Emitter Saturation Voltage (Note 9) VCE(sat) 170 230 mV IC = 6A, IB = 300mA 4
Base-Emitter Saturation Voltage (Note 9) VBE(sat) 970 1100 mV IC = 6A, IB = 300mA 4
Base-Emitter Turn-on Voltage (Note 9) VBE(on) 910 1050 mV IC = 6A, VCE = 1V 4
Thermal Resistance, Junction to Ambient (Note 5) RθJA 83 °C/W Note 5: 25mm x 25mm 1oz Cu, still air 2
Thermal Resistance, Junction to Ambient (Note 6) RθJA 60 °C/W Note 6: 50mm x 50mm 1oz Cu 2
Thermal Resistance, Junction to Case (Note 5) RθJC 5.3 °C/W Note 5 mounting 2
Thermal Resistance, Junction to Leads (Note 7) RθJL 3.23 °C/W Note 7: junction to solder-point on exposed collector pad 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL￾STD-202, Method 208  Weight: 0.05 grams (Approximate) 1

CAD (KiCad official)

  • Symbol: ZXTN2010ZQTA
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: zxtn2010zqta-etched.step / zxtn2010zqta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtn2010zqta.step / zxtn2010zqta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 b7f78844f2c720f7, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF