component
ZXTN2010ZQTA
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownZXTN2010ZQTA
Diodes Incorporated · Bipolar (BJT) · SOT-89
ZXTN2010ZQTA from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; drive terminal, with VCE(sat) < 65mV at IC = 1A, IB = 50mA and VEBO rating of 7V. |
| 2 | C | passive | Collector, also connected to the exposed collector tab; VCEO 60V, VCBO 150V, continuous IC 5A and peak ICM 20A. |
| 3 | E | passive | Emitter; current return terminal of the NPN transistor, VEBO rating 7V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 150 | V | 2 | |||
| Collector-Emitter Voltage | VCEO | 60 | V | 2 | |||
| Emitter-Base Voltage | VEBO | 7 | V | 2 | |||
| Base Current | IB | 2 | A | 2 | |||
| Continuous Collector Current | IC | 5 | A | 2 | |||
| Peak Pulse Current | ICM | 20 | A | 2 | |||
| Power Dissipation | PD | 1.5 | W | Note 5: 25mm x 25mm 1oz Cu, single-sided 1.6mm FR-4, still air, TA=25°C | 2 | ||
| Power Dissipation | PD | 2.1 | W | Note 6: 50mm x 50mm 1oz Cu, TA=25°C | 2 | ||
| Linear Derating Factor | PD | 12 | mW/°C | Note 5 mounting | 2 | ||
| Linear Derating Factor | PD | 16.8 | mW/°C | Note 6 mounting | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A | 2 | ||
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C | 2 | ||
| Collector-Base Breakdown Voltage | BVCBO | 150 | 190 | V | IC = 100µA | 4 | |
| Collector-Emitter Breakdown Voltage (Note 9) | BVCER | 150 | 190 | V | IC = 1µA, RB ≤ 1kΩ | 4 | |
| Collector-Emitter Breakdown Voltage (Note 9) | BVCEO | 60 | 80 | V | IC = 10mA | 4 | |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | 8.1 | V | IE = 100µA | 4 | |
| Collector Cutoff Current | ICBO | 50 | nA | VCB = 120V | 4 | ||
| Collector Cutoff Current | ICBO | 500 | nA | VCB = 120V, TA = +100°C | 4 | ||
| Collector Cutoff Current | ICER | 100 | nA | R ≤ 1kΩ, VCB = 120V | 4 | ||
| Emitter Cutoff Current | IEBO | 10 | nA | VEB = 6V | 4 | ||
| DC Current Transfer Static Ratio (Note 9) | hFE | 100 | 200 | IC = 10mA, VCE = 1V | 4 | ||
| DC Current Transfer Static Ratio (Note 9) | hFE | 100 | 200 | 300 | IC = 2A, VCE = 1V | 4 | |
| DC Current Transfer Static Ratio (Note 9) | hFE | 55 | 105 | IC = 5A, VCE = 1V | 4 | ||
| DC Current Transfer Static Ratio (Note 9) | hFE | 20 | 40 | IC = 10A, VCE = 1V | 4 | ||
| Collector-Emitter Saturation Voltage (Note 9) | VCE(sat) | 17 | 30 | mV | IC = 100mA, IB = 5mA | 4 | |
| Collector-Emitter Saturation Voltage (Note 9) | VCE(sat) | 35 | 55 | mV | IC = 1A, IB = 100mA | 4 | |
| Collector-Emitter Saturation Voltage (Note 9) | VCE(sat) | 40 | 65 | mV | IC = 1A, IB = 50mA | 4 | |
| Collector-Emitter Saturation Voltage (Note 9) | VCE(sat) | 90 | 125 | mV | IC = 2A, IB = 50mA | 4 | |
| Collector-Emitter Saturation Voltage (Note 9) | VCE(sat) | 170 | 230 | mV | IC = 6A, IB = 300mA | 4 | |
| Base-Emitter Saturation Voltage (Note 9) | VBE(sat) | 970 | 1100 | mV | IC = 6A, IB = 300mA | 4 | |
| Base-Emitter Turn-on Voltage (Note 9) | VBE(on) | 910 | 1050 | mV | IC = 6A, VCE = 1V | 4 | |
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 83 | °C/W | Note 5: 25mm x 25mm 1oz Cu, still air | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 60 | °C/W | Note 6: 50mm x 50mm 1oz Cu | 2 | ||
| Thermal Resistance, Junction to Case (Note 5) | RθJC | 5.3 | °C/W | Note 5 mounting | 2 | ||
| Thermal Resistance, Junction to Leads (Note 7) | RθJL | 3.23 | °C/W | Note 7: junction to solder-point on exposed collector pad | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish - Matte Tin Plated Leads, Solderable per MILSTD-202, Method 208 Weight: 0.05 grams (Approximate) | 1 |
CAD (KiCad official)
- Symbol:
ZXTN2010ZQTA - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
zxtn2010zqta-etched.step/zxtn2010zqta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxtn2010zqta.step/zxtn2010zqta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
b7f78844f2c720f7, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).