# ZXTN08400BFFTA

**Diodes Incorporated** · Bipolar (BJT) · SOT-23F

ZXTN08400BFFTA from Diodes Incorporated, in a SOT-23F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the NPN transistor, with an absolute maximum base current IB of 0.2 A and emitter-base voltage VEBO of 7 V. |
| 2 | E | passive | Emitter terminal of the NPN transistor, with a reverse-blocking emitter-collector voltage VECO rated at 6 V. |
| 3 | C | passive | Collector terminal, also the exposed collector pad used for heat sinking, rated for VCEO of 400 V and continuous collector current IC of 0.5 A (1 A peak). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23F |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 450 | 550 |  | V | IC = 100µA | 4 |
| Collector-Emitter Breakdown Voltage (Forward Blocking) | BVCEX | 450 | 550 |  | V | IC = 100µA, RBE≤1kΩ or -1V < VBE < 0.25V | 4 |
| Collector-Emitter Breakdown Voltage (Base Open) | BVCEO | 400 | 500 |  | V | IC = 10mA | 4 |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | 8.1 |  | V | IE = 100µA | 4 |
| Emitter-Collector Breakdown Voltage (Reverse Blocking) | BVECX | 6 | 8 |  | V | IE = 100µA, RBC≤1kΩ or -0.25V < VBC < 0.25V | 4 |
| Emitter-Collector Breakdown Voltage (Base Open) | BVECO | 6 | 8.5 |  | V | IE = 100µA | 4 |
| Collector-Base Cutoff Current | ICBO |  |  | 50 | nA | VCB = 360V | 4 |
| Collector-Base Cutoff Current (TA = +100°C) | ICBO |  |  | 20 | µA | VCB = 360V, TA = +100°C | 4 |
| Collector-Emitter Cutoff Current | ICEX |  |  | 100 | nA | VCE = 360V, RBE≤1kΩ, -1V < VBE < 0.25V | 4 |
| Emitter-Base Cutoff Current | IEBO |  |  | 50 | nA | VEB = 5.6V | 4 |
| Collector-Emitter Saturation Voltage | VCE(SAT) |  | 70 | 85 | mV | IC = 20mA, IB = 1mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(SAT) |  | 50 | 70 | mV | IC = 50mA, IB = 5mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(SAT) |  | 120 | 170 | mV | IC = 300mA, IB = 30mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(SAT) |  | 125 | 175 | mV | IC = 500mA, IB = 100mA | 4 |
| Base-Emitter Saturation Voltage | VBE(SAT) |  | 865 | 950 | mV | IC = 500mA, IB = 100mA | 4 |
| Base-Emitter On Voltage | VBE(ON) |  | 800 | 900 | mV | IC = 500mA, VCE = 10V | 4 |
| Output Capacitance | COBO |  | 8 | 10 | pF | VCB = 20V, f = 1MHz | 4 |
| Collector-Base Voltage | VCBO |  |  | 450 | V |  | 2 |
| Collector-Emitter Voltage (Forward Blocking) | VCEX |  |  | 450 | V |  | 2 |
| Collector-Emitter Voltage | VCEO |  |  | 400 | V |  | 2 |
| Emitter-Collector Voltage (Reverse Blocking) | VECO |  |  | 6 | V |  | 2 |
| Emitter-Base Voltage | VEBO |  |  | 7 | V |  | 2 |
| Continuous Collector Current | IC |  |  | 0.5 | A |  | 2 |
| Peak Pulse Current | ICM |  |  | 1 | A |  | 2 |
| Base Current | IB |  |  | 0.2 | A |  | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |
| Power Dissipation | PD |  |  | 0.84 | W | Note 5: 15mm x 15mm 1oz Cu, single-sided 1.6mm FR-4, still air | 2 |
| Power Dissipation | PD |  |  | 1.34 | W | Note 6: 25mm x 25mm 2oz Cu | 2 |
| Power Dissipation | PD |  |  | 1.5 | W | Note 7: 50mm x 50mm 2oz Cu | 2 |
| Power Dissipation | PD |  |  | 2 | W | Note 8: Note 7 mounting, measured at t < 5 seconds | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 149 |  | °C/W | Note 5: 15mm x 15mm 1oz Cu, still air | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 93.4 |  | °C/W | Note 6: 25mm x 25mm 2oz Cu | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 83.3 |  | °C/W | Note 7: 50mm x 50mm 2oz Cu | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 60 |  | °C/W | Note 8: Note 7 mounting, measured at t < 5 seconds | 2 |
| Thermal Resistance, Junction to Lead | RθJL |  | 43.8 |  | °C/W | Note 9: junction to solder point at end of collector lead | 2 |
| Electrostatic Discharge - Human Body Model | ESD HBM |  | 4000 |  | V | JEDEC Class 3A (JESD22-A114) | 2 |
| Electrostatic Discharge - Machine Model | ESD MM |  | 400 |  | V | JEDEC Class C (JESD22-A115) | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts |  | tin |  Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |

## CAD (KiCad official)

- Symbol: `ZXTN08400BFFTA`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23F (KiCad packages3D, STEP)
- 3D model files: `zxtn08400bffta-etched.step` / `zxtn08400bffta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxtn08400bffta.step` / `zxtn08400bffta.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588911545879302144) (7 pp, sha256 `99b1b6d041c69180`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/zxtn08400bffta-datasheet.pdf)