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ZXTN08400BFFTA

Public Made by Adom

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Diodes Incorporated Bipolar (BJT), SOT-23F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

markdown

ZXTN08400BFFTA

Diodes Incorporated · Bipolar (BJT) · SOT-23F

ZXTN08400BFFTA from Diodes Incorporated, in a SOT-23F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the NPN transistor, with an absolute maximum base current IB of 0.2 A and emitter-base voltage VEBO of 7 V.
2 E passive Emitter terminal of the NPN transistor, with a reverse-blocking emitter-collector voltage VECO rated at 6 V.
3 C passive Collector terminal, also the exposed collector pad used for heat sinking, rated for VCEO of 400 V and continuous collector current IC of 0.5 A (1 A peak).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO 450 550 V IC = 100µA 4
Collector-Emitter Breakdown Voltage (Forward Blocking) BVCEX 450 550 V IC = 100µA, RBE≤1kΩ or -1V < VBE < 0.25V 4
Collector-Emitter Breakdown Voltage (Base Open) BVCEO 400 500 V IC = 10mA 4
Emitter-Base Breakdown Voltage BVEBO 7 8.1 V IE = 100µA 4
Emitter-Collector Breakdown Voltage (Reverse Blocking) BVECX 6 8 V IE = 100µA, RBC≤1kΩ or -0.25V < VBC < 0.25V 4
Emitter-Collector Breakdown Voltage (Base Open) BVECO 6 8.5 V IE = 100µA 4
Collector-Base Cutoff Current ICBO 50 nA VCB = 360V 4
Collector-Base Cutoff Current (TA = +100°C) ICBO 20 µA VCB = 360V, TA = +100°C 4
Collector-Emitter Cutoff Current ICEX 100 nA VCE = 360V, RBE≤1kΩ, -1V < VBE < 0.25V 4
Emitter-Base Cutoff Current IEBO 50 nA VEB = 5.6V 4
Collector-Emitter Saturation Voltage VCE(SAT) 70 85 mV IC = 20mA, IB = 1mA 4
Collector-Emitter Saturation Voltage VCE(SAT) 50 70 mV IC = 50mA, IB = 5mA 4
Collector-Emitter Saturation Voltage VCE(SAT) 120 170 mV IC = 300mA, IB = 30mA 4
Collector-Emitter Saturation Voltage VCE(SAT) 125 175 mV IC = 500mA, IB = 100mA 4
Base-Emitter Saturation Voltage VBE(SAT) 865 950 mV IC = 500mA, IB = 100mA 4
Base-Emitter On Voltage VBE(ON) 800 900 mV IC = 500mA, VCE = 10V 4
Output Capacitance COBO 8 10 pF VCB = 20V, f = 1MHz 4
Collector-Base Voltage VCBO 450 V 2
Collector-Emitter Voltage (Forward Blocking) VCEX 450 V 2
Collector-Emitter Voltage VCEO 400 V 2
Emitter-Collector Voltage (Reverse Blocking) VECO 6 V 2
Emitter-Base Voltage VEBO 7 V 2
Continuous Collector Current IC 0.5 A 2
Peak Pulse Current ICM 1 A 2
Base Current IB 0.2 A 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Power Dissipation PD 0.84 W Note 5: 15mm x 15mm 1oz Cu, single-sided 1.6mm FR-4, still air 2
Power Dissipation PD 1.34 W Note 6: 25mm x 25mm 2oz Cu 2
Power Dissipation PD 1.5 W Note 7: 50mm x 50mm 2oz Cu 2
Power Dissipation PD 2 W Note 8: Note 7 mounting, measured at t < 5 seconds 2
Thermal Resistance, Junction to Ambient RθJA 149 °C/W Note 5: 15mm x 15mm 1oz Cu, still air 2
Thermal Resistance, Junction to Ambient RθJA 93.4 °C/W Note 6: 25mm x 25mm 2oz Cu 2
Thermal Resistance, Junction to Ambient RθJA 83.3 °C/W Note 7: 50mm x 50mm 2oz Cu 2
Thermal Resistance, Junction to Ambient RθJA 60 °C/W Note 8: Note 7 mounting, measured at t < 5 seconds 2
Thermal Resistance, Junction to Lead RθJL 43.8 °C/W Note 9: junction to solder point at end of collector lead 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC Class 3A (JESD22-A114) 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC Class C (JESD22-A115) 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: ZXTN08400BFFTA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23F (KiCad packages3D, STEP)
  • 3D model files: zxtn08400bffta-etched.step / zxtn08400bffta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtn08400bffta.step / zxtn08400bffta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 99b1b6d041c69180, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF