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ZXTD4591E6TA

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Diodes Incorporated Bipolar Transistors - BJT, SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ZXTD4591E6TA

Diodes Incorporated · Bipolar Transistors - BJT · SOT-26

ZXTD4591E6TA from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C1 passive NPN transistor collector (VCEO 60V, IC 1A continuous, ICM 2A).
2 B1 input NPN transistor base (IB max 500mA).
3 C2 passive PNP transistor collector (VCEO -60V, IC -1A continuous, ICM -2A).
4 E2 passive PNP transistor emitter (VEBO -7V).
5 B2 input PNP transistor base (IB max -500mA).
6 E1 passive NPN transistor emitter (VEBO 7V).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-26
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
NPN Collector-Base Voltage VCBO 80 V 2
NPN Collector-Emitter Voltage VCEO 60 V 2
NPN Emitter-Base Voltage VEBO 7 V 2
NPN Peak Pulse Current ICM 2 A 2
NPN Continuous Collector Current IC 1 A 2
NPN Base Current IB 500 mA 2
PNP Collector-Base Voltage VCBO -80 V 2
PNP Collector-Emitter Voltage VCEO -60 V 2
PNP Emitter-Base Voltage VEBO -7 V 2
PNP Peak Pulse Current ICM -2 A 2
PNP Continuous Collector Current IC -1 A 2
PNP Base Current IB -500 mA 2
Power Dissipation (Note 6) PD 1.1 W Note 6: 25mm x 25mm 1oz copper, single-sided 1.6mm FR4, still air, steady state 2
Linear Derating Factor (Note 6) 8.8 mW/°C Note 6: as above 2
Power Dissipation (Note 7) PD 1.7 W Note 7: as Note 6, t < 5 seconds 2
Linear Derating Factor (Note 7) 13.6 mW/°C Note 7: as Note 6, t < 5 seconds 2
Thermal Resistance, Junction to Ambient (Note 6) RJA 113 °C/W Note 6: as above 2
Thermal Resistance, Junction to Ambient (Note 7) RJA 73 °C/W Note 7: as Note 6, t < 5 seconds 2
Thermal Resistance, Junction to Lead (Note 8) RJL 74 °C/W Note 8: junction to solder point at end of collector lead 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC class 3A (Note 9, JESD22-A114) 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC class C (Note 9, JESD22-A115) 2
NPN Collector-Base Breakdown Voltage BVCBO 80 V IC = 100µA, IE = 0 3
NPN Collector-Emitter Breakdown Voltage (Note 10) BVCEO 60 V IC = 10mA, IB = 0 3
NPN Emitter-Base Breakdown Voltage BVEBO 7 V IE = 100µA, IC = 0 3
NPN Collector Cut-Off Current ICBO 100 nA VCB = 60V 3
NPN Emitter Cut-Off Current IEBO 100 nA VEB =5.6 3
NPN DC Current Gain hFE 100 IC = 1mA, VCE = 5V 3
NPN DC Current Gain hFE 80 IC = 1A, VCE = 5V 3
NPN DC Current Gain hFE 30 IC = 2A, VCE = 5V 3
NPN DC Current Gain (printed max value) hFE 300 3
NPN Collector-Emitter Saturation Voltage VCE(sat) 0.25 V IC = 500mA, IB = 50mA 3
NPN Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC = 1A, IB = 100mA 3
NPN Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC = 1A, IB = 100mA 3
NPN Base-Emitter Turn-On Voltage VBE(on) 1 V IC = 1, VCE = 5V 3
NPN Output Capacitance Cobo 10 pF VCB = 10V, f = 1.0MHz 3
NPN Current Gain Bandwidth Product fT 180 MHz IC = 50mA, VCE = 10V, f = 100MHz 3
PNP Collector-Base Breakdown Voltage BVCBO -80 V IC = -100µA, IE = 0 5
PNP Collector-Emitter Breakdown Voltage (Note 10) BVCEO -60 V IC = -10mA, IB = 0 5
PNP Emitter-Base Breakdown Voltage BVEBO -7 V IE = -100µA, IC = 0 5
PNP Collector Cut-Off Current ICBO -100 nA VCB = -60V 5
PNP Emitter Cut-Off Current IEBO -100 nA VEB = -5.6V 5
PNP DC Current Gain hFE 100 IC = -1mA, VCE = -5V 5
PNP DC Current Gain hFE 80 IC = -1A, VCE = -5V 5
PNP DC Current Gain hFE 15 IC = -2A, VCE = -5V 5
PNP DC Current Gain (printed max value) hFE 300 5
PNP Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = -500mA, IB = -50mA 5
PNP Collector-Emitter Saturation Voltage VCE(sat) -0.6 V IC = -1A, IB = -100mA 5
PNP Base-Emitter Saturation Voltage VBE(sat) -1.2 V IC = -1A, IB = -100mA 5
PNP Base-Emitter Turn-On Voltage VBE(on) -1 V IC = -1A, VCE = -5V 5
PNP Output Capacitance Cobo 10 pF VCB = -10V, f = 1.0MHz 5
PNP Current Gain Bandwidth Product fT 150 MHz IC = -50mA, VCE = -10V, f = 100MHz 5

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing Abs Base Current IB 500 mA PNP - Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) 2
contacts tin Terminals: Finish, Matte Tin Plated Leads;  Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: ZXTD4591E6TA
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-26 (KiCad packages3D, STEP)
  • 3D model files: zxtd4591e6ta-etched.step / zxtd4591e6ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtd4591e6ta.step / zxtd4591e6ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 7a7b156ab5fe1cbe, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF