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ZXTD4591E6TA
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownZXTD4591E6TA
Diodes Incorporated · Bipolar Transistors - BJT · SOT-26
ZXTD4591E6TA from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C1 | passive | NPN transistor collector (VCEO 60V, IC 1A continuous, ICM 2A). |
| 2 | B1 | input | NPN transistor base (IB max 500mA). |
| 3 | C2 | passive | PNP transistor collector (VCEO -60V, IC -1A continuous, ICM -2A). |
| 4 | E2 | passive | PNP transistor emitter (VEBO -7V). |
| 5 | B2 | input | PNP transistor base (IB max -500mA). |
| 6 | E1 | passive | NPN transistor emitter (VEBO 7V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-26 |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| NPN Collector-Base Voltage | VCBO | 80 | V | 2 | |||
| NPN Collector-Emitter Voltage | VCEO | 60 | V | 2 | |||
| NPN Emitter-Base Voltage | VEBO | 7 | V | 2 | |||
| NPN Peak Pulse Current | ICM | 2 | A | 2 | |||
| NPN Continuous Collector Current | IC | 1 | A | 2 | |||
| NPN Base Current | IB | 500 | mA | 2 | |||
| PNP Collector-Base Voltage | VCBO | -80 | V | 2 | |||
| PNP Collector-Emitter Voltage | VCEO | -60 | V | 2 | |||
| PNP Emitter-Base Voltage | VEBO | -7 | V | 2 | |||
| PNP Peak Pulse Current | ICM | -2 | A | 2 | |||
| PNP Continuous Collector Current | IC | -1 | A | 2 | |||
| PNP Base Current | IB | -500 | mA | 2 | |||
| Power Dissipation (Note 6) | PD | 1.1 | W | Note 6: 25mm x 25mm 1oz copper, single-sided 1.6mm FR4, still air, steady state | 2 | ||
| Linear Derating Factor (Note 6) | 8.8 | mW/°C | Note 6: as above | 2 | |||
| Power Dissipation (Note 7) | PD | 1.7 | W | Note 7: as Note 6, t < 5 seconds | 2 | ||
| Linear Derating Factor (Note 7) | 13.6 | mW/°C | Note 7: as Note 6, t < 5 seconds | 2 | |||
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 113 | °C/W | Note 6: as above | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 7) | RJA | 73 | °C/W | Note 7: as Note 6, t < 5 seconds | 2 | ||
| Thermal Resistance, Junction to Lead (Note 8) | RJL | 74 | °C/W | Note 8: junction to solder point at end of collector lead | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4000 | V | JEDEC class 3A (Note 9, JESD22-A114) | 2 | ||
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC class C (Note 9, JESD22-A115) | 2 | ||
| NPN Collector-Base Breakdown Voltage | BVCBO | 80 | V | IC = 100µA, IE = 0 | 3 | ||
| NPN Collector-Emitter Breakdown Voltage (Note 10) | BVCEO | 60 | V | IC = 10mA, IB = 0 | 3 | ||
| NPN Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100µA, IC = 0 | 3 | ||
| NPN Collector Cut-Off Current | ICBO | 100 | nA | VCB = 60V | 3 | ||
| NPN Emitter Cut-Off Current | IEBO | 100 | nA | VEB =5.6 | 3 | ||
| NPN DC Current Gain | hFE | 100 | IC = 1mA, VCE = 5V | 3 | |||
| NPN DC Current Gain | hFE | 80 | IC = 1A, VCE = 5V | 3 | |||
| NPN DC Current Gain | hFE | 30 | IC = 2A, VCE = 5V | 3 | |||
| NPN DC Current Gain (printed max value) | hFE | 300 | 3 | ||||
| NPN Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | V | IC = 500mA, IB = 50mA | 3 | ||
| NPN Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | V | IC = 1A, IB = 100mA | 3 | ||
| NPN Base-Emitter Saturation Voltage | VBE(sat) | 1.1 | V | IC = 1A, IB = 100mA | 3 | ||
| NPN Base-Emitter Turn-On Voltage | VBE(on) | 1 | V | IC = 1, VCE = 5V | 3 | ||
| NPN Output Capacitance | Cobo | 10 | pF | VCB = 10V, f = 1.0MHz | 3 | ||
| NPN Current Gain Bandwidth Product | fT | 180 | MHz | IC = 50mA, VCE = 10V, f = 100MHz | 3 | ||
| PNP Collector-Base Breakdown Voltage | BVCBO | -80 | V | IC = -100µA, IE = 0 | 5 | ||
| PNP Collector-Emitter Breakdown Voltage (Note 10) | BVCEO | -60 | V | IC = -10mA, IB = 0 | 5 | ||
| PNP Emitter-Base Breakdown Voltage | BVEBO | -7 | V | IE = -100µA, IC = 0 | 5 | ||
| PNP Collector Cut-Off Current | ICBO | -100 | nA | VCB = -60V | 5 | ||
| PNP Emitter Cut-Off Current | IEBO | -100 | nA | VEB = -5.6V | 5 | ||
| PNP DC Current Gain | hFE | 100 | IC = -1mA, VCE = -5V | 5 | |||
| PNP DC Current Gain | hFE | 80 | IC = -1A, VCE = -5V | 5 | |||
| PNP DC Current Gain | hFE | 15 | IC = -2A, VCE = -5V | 5 | |||
| PNP DC Current Gain (printed max value) | hFE | 300 | 5 | ||||
| PNP Collector-Emitter Saturation Voltage | VCE(sat) | -0.3 | V | IC = -500mA, IB = -50mA | 5 | ||
| PNP Collector-Emitter Saturation Voltage | VCE(sat) | -0.6 | V | IC = -1A, IB = -100mA | 5 | ||
| PNP Base-Emitter Saturation Voltage | VBE(sat) | -1.2 | V | IC = -1A, IB = -100mA | 5 | ||
| PNP Base-Emitter Turn-On Voltage | VBE(on) | -1 | V | IC = -1A, VCE = -5V | 5 | ||
| PNP Output Capacitance | Cobo | 10 | pF | VCB = -10V, f = 1.0MHz | 5 | ||
| PNP Current Gain Bandwidth Product | fT | 150 | MHz | IC = -50mA, VCE = -10V, f = 100MHz | 5 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | Abs | Base Current IB 500 mA PNP - Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) | 2 | |
| contacts | tin | Terminals: Finish, Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
ZXTD4591E6TA - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-26 (KiCad packages3D, STEP)
- 3D model files:
zxtd4591e6ta-etched.step/zxtd4591e6ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxtd4591e6ta.step/zxtd4591e6ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
7a7b156ab5fe1cbe, retrieved 2026-10-21, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).