# ZXMP6A13FTA-VB

**VBsemi Elec** · MOSFETs · SOT-23(TO-236)

ZXMP6A13FTA-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET, with gate-source voltage limited to ±20 V under the absolute maximum ratings. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, which carries the body diode with a continuous source-drain diode current of -5.2 A. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -60 V and a continuous drain current of -5.2 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current (TC = 25 °C) | ID | -5.2 |  |  | A | VGS at -10 V, TC = 25 °C | 1 |
| Continuous Drain Current (TC = 100 °C) | ID | -3.8 |  |  | A | VGS at -10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | -21 |  |  | A | Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) | 1 |
| Linear Derating Factor |  |  |  | 0.18 | W/°C |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 120 | mJ | VDD = -25 V, starting TJ = 25 °C, L = 5.0 mH, RG = 25 Ω, IAS = -5.3 A | 1 |
| Repetitive Avalanche Current | IAR | -5.2 |  |  | A |  | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 2.7 | mJ | Repetitive rating; pulse width limited by maximum junction temperature | 1 |
| Maximum Power Dissipation | PD |  |  | 27 | W | TC = 25 °C | 1 |
| Peak Diode Recovery dV/dt | dV/dt | -4.5 |  |  | V/ns | ISD ≤ -6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 175 | °C |  | 1 |
| Soldering Recommendations (Peak Temperature) |  |  |  | 300 |  | for 10 s, 1.6 mm from case | 1 |
| Mounting Torque |  |  |  | 10 | lbf · in | 6-32 or M3 screw | 1 |
| Mounting Torque |  |  |  | 1.1 | N · m | 6-32 or M3 screw | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 |  |  | V | VGS = 0 V, ID = -250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -1 |  | -2.5 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ±20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -100 | µA | VDS = -60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -500 | µA | VDS = -48 V, VGS = 0 V, TJ = 150 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.05 | Ω | VGS = -10 V, ID = -3.2 A | 2 |
| Forward Transconductance | gfs | 1.6 |  |  | S | VDS = -25 V, ID = -3.2 A | 2 |
| Body Diode Voltage | VSD |  |  | -5.5 | V | TJ = 25 °C, IS = -5.2 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 80 | 160 | ns | TJ = 25 °C, IF = -4.7 A, dI/dt = 100 A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 0.096 | 0.19 | µC | TJ = 25 °C, IF = -4.7 A, dI/dt = 100 A/µs | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | 5.2 | A |  | 2 |
| Pulsed Diode Forward Current | ISM |  |  | 21 | A |  | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ |  | -0.06 |  | V/°C | Reference to 25 °C, ID = -1 mA | 2 |
| Input Capacitance | Ciss |  | 270 |  | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 |
| Output Capacitance | Coss |  | 170 |  | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 31 |  | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 |
| Drain to Sink Capacitance | C |  | 12 |  | pF | f = 1.0 MHz | 2 |
| Gate-Source Charge | Qgs |  | -3.8 |  | nC | VGS = -10 V, ID = -4.7 A, VDS = -48 V | 2 |
| Gate-Drain Charge | Qgd |  | -5.1 |  | nC | VGS = -10 V, ID = -4.7 A, VDS = -48 V | 2 |
| Turn-On Delay Time | td(on) |  | 11 |  | ns | VDD = -30 V, ID = -4.7 A, RG = 24 Ω, RD = 4.0 Ω | 2 |
| Rise Time | tr |  | 63 |  | ns | VDD = -30 V, ID = -4.7 A, RG = 24 Ω, RD = 4.0 Ω | 2 |
| Fall Time | tf |  | 31 |  | ns | VDD = -30 V, ID = -4.7 A, RG = 24 Ω, RD = 4.0 Ω | 2 |
| Internal Drain Inductance | LD |  | 4.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |
| Internal Source Inductance | LS |  | 7.5 |  | nH |  | 2 |
| Maximum Junction-to-Ambient | RthJA |  |  | -65 | °C/W |  | 2 |
| Maximum Junction-to-Case (Drain) | RthJC |  |  | -5.5 | °C/W |  | 2 |

## CAD (KiCad official)

- Symbol: `ZXMP6A13FTA-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `zxmp6a13fta-vb-etched.step` / `zxmp6a13fta-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxmp6a13fta-vb.step` / `zxmp6a13fta-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602988872997347328) (10 pp, sha256 `06b92b49cf0c6c63`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/zxmp6a13fta-vb-datasheet.pdf)