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ZXMP6A13FTA-VB
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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownZXMP6A13FTA-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
ZXMP6A13FTA-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET, with gate-source voltage limited to ±20 V under the absolute maximum ratings. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, which carries the body diode with a continuous source-drain diode current of -5.2 A. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -60 V and a continuous drain current of -5.2 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TC = 25 °C) | ID | -5.2 | A | VGS at -10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current (TC = 100 °C) | ID | -3.8 | A | VGS at -10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | -21 | A | Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) | 1 | ||
| Linear Derating Factor | 0.18 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 120 | mJ | VDD = -25 V, starting TJ = 25 °C, L = 5.0 mH, RG = 25 Ω, IAS = -5.3 A | 1 | ||
| Repetitive Avalanche Current | IAR | -5.2 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 2.7 | mJ | Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 27 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | -4.5 | V/ns | ISD ≤ -6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | for 10 s, 1.6 mm from case | 1 | ||||
| Mounting Torque | 10 | lbf · in | 6-32 or M3 screw | 1 | |||
| Mounting Torque | 1.1 | N · m | 6-32 or M3 screw | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1 | -2.5 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -100 | µA | VDS = -60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -500 | µA | VDS = -48 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.05 | Ω | VGS = -10 V, ID = -3.2 A | 2 | ||
| Forward Transconductance | gfs | 1.6 | S | VDS = -25 V, ID = -3.2 A | 2 | ||
| Body Diode Voltage | VSD | -5.5 | V | TJ = 25 °C, IS = -5.2 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 80 | 160 | ns | TJ = 25 °C, IF = -4.7 A, dI/dt = 100 A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 0.096 | 0.19 | µC | TJ = 25 °C, IF = -4.7 A, dI/dt = 100 A/µs | 2 | |
| Continuous Source-Drain Diode Current | IS | 5.2 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 21 | A | 2 | |||
| VDS Temperature Coefficient | ΔVDS/TJ | -0.06 | V/°C | Reference to 25 °C, ID = -1 mA | 2 | ||
| Input Capacitance | Ciss | 270 | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 170 | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 31 | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 | ||
| Drain to Sink Capacitance | C | 12 | pF | f = 1.0 MHz | 2 | ||
| Gate-Source Charge | Qgs | -3.8 | nC | VGS = -10 V, ID = -4.7 A, VDS = -48 V | 2 | ||
| Gate-Drain Charge | Qgd | -5.1 | nC | VGS = -10 V, ID = -4.7 A, VDS = -48 V | 2 | ||
| Turn-On Delay Time | td(on) | 11 | ns | VDD = -30 V, ID = -4.7 A, RG = 24 Ω, RD = 4.0 Ω | 2 | ||
| Rise Time | tr | 63 | ns | VDD = -30 V, ID = -4.7 A, RG = 24 Ω, RD = 4.0 Ω | 2 | ||
| Fall Time | tf | 31 | ns | VDD = -30 V, ID = -4.7 A, RG = 24 Ω, RD = 4.0 Ω | 2 | ||
| Internal Drain Inductance | LD | 4.5 | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 | ||
| Internal Source Inductance | LS | 7.5 | nH | 2 | |||
| Maximum Junction-to-Ambient | RthJA | -65 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | -5.5 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
ZXMP6A13FTA-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
zxmp6a13fta-vb-etched.step/zxmp6a13fta-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxmp6a13fta-vb.step/zxmp6a13fta-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (10 pp, sha256
06b92b49cf0c6c63, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).