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ZXMN6A09DN8TA

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorzxmn6a09dn8tafactory-2.0.0extractor-text

Verified ZXMN6A09DN8TA

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: ZXMN6A09DN8TA · SO-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 8-page datasheet
  • ✓distributor: lcsc C461141, digikey ZXMN6A09DN8TR-ND, mouser 522-ZXMN6A09DN8TA
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-kn90ehk_/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.7)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ zxmn6a09dn8ta.kicad_sym✓ zxmn6a09dn8ta.kicad_mod✓ zxmn6a09dn8ta.step
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Ray Publish 0.1.0 b9a0fc7 7d ago

ZXMN6A09DN8TA

Diodes Incorporated · MOSFETs · SO-8

ZXMN6A09DN8TA from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; the body diode continuous source current is rated 3.5 A.
2 G1 input Gate of MOSFET 1; gate-source voltage limit is ±20 V with threshold of 1.0 to 3.0 V.
3 S2 passive Source of MOSFET 2; the body diode continuous source current is rated 3.5 A.
4 G2 input Gate of MOSFET 2; gate-source voltage limit is ±20 V with threshold of 1.0 to 3.0 V.
5 D2 passive Drain of MOSFET 2, tied to pin 6; drain-source voltage is rated 60 V.
6 D2 passive Drain of MOSFET 2, tied to pin 5; drain-source voltage is rated 60 V.
7 D1 passive Drain of MOSFET 1, tied to pin 8; drain-source voltage is rated 60 V.
8 D1 passive Drain of MOSFET 1, tied to pin 7; drain-source voltage is rated 60 V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 60 V ID= 250A, VGS=0V 4
Zero gate voltage drain current IDSS 1 µA VDS= 60V, VGS=0V 4
Gate-body leakage IGSS 100 nA VGS=±20V, VDS=0V 4
Gate-source threshold voltage VGS(th) 1 3 V ID= 250A, VDS=VGS 4
Static drain-source on-state resistance RDS(on) 0.04 Ω VGS= 10V, ID= 8.2A (pulsed, 300µs, duty cycle 2%) 4
Static drain-source on-state resistance RDS(on) 0.06 Ω VGS= 4.5V, ID = 7.4A (pulsed, 300µs, duty cycle 2%) 4
Diode forward voltage VSD 0.85 0.95 V Tj=25°C, IS= 6.6A, VGS=0V 4
Drain-source voltage VDSS 60 V 2
Gate-source voltage VGS -20 20 V 2
Continuous drain current ID 5.6 A VGS=10V; Tamb=25°C(b) 2
Continuous drain current ID 4.5 A VGS=10V; Tamb=70°C(b) 2
Continuous drain current ID 4.3 A VGS=10V; Tamb=25°C(a) 2
Pulsed drain current IDM 27 A Repetitive rating, pulse width limited by Tj max (c) 2
Continuous source current (body diode) IS 3.5 A (b) 2
Pulsed source current (body diode) ISM 27 A (c) 2
Power dissipation PD 1.25 W Tamb = 25°C(a)(d) 2
Linear derating factor 10 mW/°C for PD at Tamb = 25°C(a)(d) 2
Power dissipation PD 1.8 W Tamb = 25°C(b)(e) 2
Linear derating factor 14 mW/°C for PD at Tamb = 25°C(b)(e) 2
Power dissipation PD 2.1 W Tamb = 25°C(b)(d) 2
Linear derating factor 17 mW/°C for PD at Tamb = 25°C(b)(d) 2
Operating and storage temperature range Tj, Tstg -55 150 °C 2
Junction to ambient RJA 100 °C/W (a)(d) 2
Junction to ambient RJA 70 °C/W (a)(e) 2
Junction to ambient RJA 60 °C/W (b)(d) 2

CAD (KiCad official)

  • Symbol: ZXMN6A09DN8TA
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: zxmn6a09dn8ta-etched.step / zxmn6a09dn8ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxmn6a09dn8ta.step / zxmn6a09dn8ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 b535736d6ac342ee, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF