component
ZXMN6A09DN8TA
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
| verification.json | 7d ago |
| zxmn6a09dn8ta-etched.glb | 7d ago |
| zxmn6a09dn8ta-etched.step | 7d ago |
| zxmn6a09dn8ta-hero.glb | 7d ago |
| zxmn6a09dn8ta-hero.overlay.json | 7d ago |
| zxmn6a09dn8ta.glb | 7d ago |
| zxmn6a09dn8ta.kicad_mod | 7d ago |
| zxmn6a09dn8ta.kicad_sym | 7d ago |
| zxmn6a09dn8ta.lbr | 7d ago |
| zxmn6a09dn8ta.step | 7d ago |
ZXMN6A09DN8TA
Diodes Incorporated · MOSFETs · SO-8
ZXMN6A09DN8TA from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; the body diode continuous source current is rated 3.5 A. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage limit is ±20 V with threshold of 1.0 to 3.0 V. |
| 3 | S2 | passive | Source of MOSFET 2; the body diode continuous source current is rated 3.5 A. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage limit is ±20 V with threshold of 1.0 to 3.0 V. |
| 5 | D2 | passive | Drain of MOSFET 2, tied to pin 6; drain-source voltage is rated 60 V. |
| 6 | D2 | passive | Drain of MOSFET 2, tied to pin 5; drain-source voltage is rated 60 V. |
| 7 | D1 | passive | Drain of MOSFET 1, tied to pin 8; drain-source voltage is rated 60 V. |
| 8 | D1 | passive | Drain of MOSFET 1, tied to pin 7; drain-source voltage is rated 60 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | ID= 250A, VGS=0V | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS= 60V, VGS=0V | 4 | ||
| Gate-body leakage | IGSS | 100 | nA | VGS=±20V, VDS=0V | 4 | ||
| Gate-source threshold voltage | VGS(th) | 1 | 3 | V | ID= 250A, VDS=VGS | 4 | |
| Static drain-source on-state resistance | RDS(on) | 0.04 | Ω | VGS= 10V, ID= 8.2A (pulsed, 300µs, duty cycle 2%) | 4 | ||
| Static drain-source on-state resistance | RDS(on) | 0.06 | Ω | VGS= 4.5V, ID = 7.4A (pulsed, 300µs, duty cycle 2%) | 4 | ||
| Diode forward voltage | VSD | 0.85 | 0.95 | V | Tj=25°C, IS= 6.6A, VGS=0V | 4 | |
| Drain-source voltage | VDSS | 60 | V | 2 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous drain current | ID | 5.6 | A | VGS=10V; Tamb=25°C(b) | 2 | ||
| Continuous drain current | ID | 4.5 | A | VGS=10V; Tamb=70°C(b) | 2 | ||
| Continuous drain current | ID | 4.3 | A | VGS=10V; Tamb=25°C(a) | 2 | ||
| Pulsed drain current | IDM | 27 | A | Repetitive rating, pulse width limited by Tj max (c) | 2 | ||
| Continuous source current (body diode) | IS | 3.5 | A | (b) | 2 | ||
| Pulsed source current (body diode) | ISM | 27 | A | (c) | 2 | ||
| Power dissipation | PD | 1.25 | W | Tamb = 25°C(a)(d) | 2 | ||
| Linear derating factor | 10 | mW/°C | for PD at Tamb = 25°C(a)(d) | 2 | |||
| Power dissipation | PD | 1.8 | W | Tamb = 25°C(b)(e) | 2 | ||
| Linear derating factor | 14 | mW/°C | for PD at Tamb = 25°C(b)(e) | 2 | |||
| Power dissipation | PD | 2.1 | W | Tamb = 25°C(b)(d) | 2 | ||
| Linear derating factor | 17 | mW/°C | for PD at Tamb = 25°C(b)(d) | 2 | |||
| Operating and storage temperature range | Tj, Tstg | -55 | 150 | °C | 2 | ||
| Junction to ambient | RJA | 100 | °C/W | (a)(d) | 2 | ||
| Junction to ambient | RJA | 70 | °C/W | (a)(e) | 2 | ||
| Junction to ambient | RJA | 60 | °C/W | (b)(d) | 2 |
CAD (KiCad official)
- Symbol:
ZXMN6A09DN8TA - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
zxmn6a09dn8ta-etched.step/zxmn6a09dn8ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxmn6a09dn8ta.step/zxmn6a09dn8ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
b535736d6ac342ee, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).