component
ZXMN2B01F
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ZXMN2B01F
Diodes Incorporated · MOSFETs · SOT-23
ZXMN2B01F from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; low gate drive, RDS(on) 0.100 ohm at VGS=4.5V and 0.200 ohm at VGS=1.8V, absolute maximum VGS ±8 V. |
| 2 | S | passive | Source; continuous body-diode source current IS is 1.4 A and pulsed ISM is 11.8 A. |
| 3 | D | passive | Drain; V(BR)DSS is 20 V minimum and continuous drain current is 2.4 A at VGS=4.5V, Tamb=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | ID= 250µA, VGS=0V | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS= 20V, VGS=0V | 4 | ||
| Gate-body leakage | IGSS | 100 | nA | VGS=±8V, VDS=0V | 4 | ||
| Gate-source threshold voltage | VGS(th) | 0.4 | 1 | V | ID= 250µA, VDS=VGS | 4 | |
| Static drain-source on-state resistance | RDS(on) | 0.1 | Ω | VGS= 4.5V, ID= 2.4A | 4 | ||
| Static drain-source on-state resistance | RDS(on) | 0.15 | Ω | VGS= 2.5V, ID= 2.0A | 4 | ||
| Static drain-source on-state resistance | RDS(on) | 0.2 | Ω | VGS= 1.8V, ID= 1.7A | 4 | ||
| Diode forward voltage | VSD | 0.73 | 0.95 | V | Tj=25°C, IS= 1.2A, VGS=0V | 4 | |
| Drain-source voltage | VDSS | 20 | V | 2 | |||
| Gate-source voltage | VGS | -8 | 8 | V | 2 | ||
| Continuous drain current | ID | 2.4 | A | VGS= 4.5V; Tamb=25°C(b) | 2 | ||
| Continuous drain current | ID | 1.9 | A | VGS= 4.5V; Tamb=70°C(b) | 2 | ||
| Continuous drain current | ID | 2.1 | A | VGS= 4.5V; Tamb=25°C(a) | 2 | ||
| Pulsed drain current | IDM | 11.8 | A | (c) | 2 | ||
| Continuous source current (body diode) | IS | 1.4 | A | (b) | 2 | ||
| Pulsed source current (body diode) | ISM | 11.8 | A | (c) | 2 | ||
| Power dissipation | PD | 625 | mW | Tamb=25°C(a) | 2 | ||
| Power dissipation | PD | 806 | mW | Tamb=25°C(b) | 2 | ||
| Operating and storage temperature range | Tj, Tstg | -55 | 150 | °C | 2 | ||
| Thermal resistance junction to ambient | RθJA | 200 | °C/W | (a) | 2 | ||
| Thermal resistance junction to ambient | RθJA | 155 | °C/W | (b) | 2 | ||
| Forward transconductance | gfs | 6.1 | S | VDS= 10V, ID= 2.4A | 4 | ||
| Input capacitance | Ciss | 370 | pF | VDS= 10V, VGS=0V, f=1MHz | 4 | ||
| Output capacitance | Coss | 81 | pF | VDS= 10V, VGS=0V, f=1MHz | 4 | ||
| Reverse transfer capacitance | Crss | 46 | pF | VDS= 10V, VGS=0V, f=1MHz | 4 | ||
| Turn-on-delay time | td(on) | 2.2 | ns | VDD= 10V, VGS= 4.5V, ID= 1A, RG≈6.0Ω | 4 | ||
| Rise time | tr | 3.6 | ns | VDD= 10V, VGS= 4.5V, ID= 1A, RG≈6.0Ω | 4 | ||
| Turn-off delay time | td(off) | 17.8 | ns | VDD= 10V, VGS= 4.5V, ID= 1A, RG≈6.0Ω | 4 | ||
| Fall time | tf | 10.5 | ns | VDD= 10V, VGS= 4.5V, ID= 1A, RG≈6.0Ω | 4 | ||
| Total gate charge | Qg | 4.8 | nC | VDS= 10V, VGS= 4.5V, ID= 2.4A | 4 | ||
| Gate-source charge | Qgs | 0.6 | nC | VDS= 10V, VGS= 4.5V, ID= 2.4A | 4 | ||
| Gate drain charge | Qgd | 1 | nC | VDS= 10V, VGS= 4.5V, ID= 2.4A | 4 | ||
| Reverse recovery time | trr | 6.7 | ns | Tj=25°C, IF= 1.1A, di/dt=100A/ms | 4 | ||
| Reverse recovery charge | Qrr | 1.3 | nC | Tj=25°C, IF= 1.1A, di/dt=100A/ms | 4 |
CAD (KiCad official)
- Symbol:
ZXMN2B01F - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
zxmn2b01f-etched.step/zxmn2b01f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxmn2b01f.step/zxmn2b01f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
2274ea7b0732a038, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ZXMN2B01F
**Diodes Incorporated** · MOSFETs · SOT-23
ZXMN2B01F from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; low gate drive, RDS(on) 0.100 ohm at VGS=4.5V and 0.200 ohm at VGS=1.8V, absolute maximum VGS ±8 V. |
| 2 | S | passive | Source; continuous body-diode source current IS is 1.4 A and pulsed ISM is 11.8 A. |
| 3 | D | passive | Drain; V(BR)DSS is 20 V minimum and continuous drain current is 2.4 A at VGS=4.5V, Tamb=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 20 | | | V | ID= 250µA, VGS=0V | 4 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS= 20V, VGS=0V | 4 |
| Gate-body leakage | IGSS | | | 100 | nA | VGS=±8V, VDS=0V | 4 |
| Gate-source threshold voltage | VGS(th) | 0.4 | | 1 | V | ID= 250µA, VDS=VGS | 4 |
| Static drain-source on-state resistance | RDS(on) | | | 0.1 | Ω | VGS= 4.5V, ID= 2.4A | 4 |
| Static drain-source on-state resistance | RDS(on) | | | 0.15 | Ω | VGS= 2.5V, ID= 2.0A | 4 |
| Static drain-source on-state resistance | RDS(on) | | | 0.2 | Ω | VGS= 1.8V, ID= 1.7A | 4 |
| Diode forward voltage | VSD | | 0.73 | 0.95 | V | Tj=25°C, IS= 1.2A, VGS=0V | 4 |
| Drain-source voltage | VDSS | | | 20 | V | | 2 |
| Gate-source voltage | VGS | -8 | | 8 | V | | 2 |
| Continuous drain current | ID | | | 2.4 | A | VGS= 4.5V; Tamb=25°C(b) | 2 |
| Continuous drain current | ID | | | 1.9 | A | VGS= 4.5V; Tamb=70°C(b) | 2 |
| Continuous drain current | ID | | | 2.1 | A | VGS= 4.5V; Tamb=25°C(a) | 2 |
| Pulsed drain current | IDM | | | 11.8 | A | (c) | 2 |
| Continuous source current (body diode) | IS | | | 1.4 | A | (b) | 2 |
| Pulsed source current (body diode) | ISM | | | 11.8 | A | (c) | 2 |
| Power dissipation | PD | | | 625 | mW | Tamb=25°C(a) | 2 |
| Power dissipation | PD | | | 806 | mW | Tamb=25°C(b) | 2 |
| Operating and storage temperature range | Tj, Tstg | -55 | | 150 | °C | | 2 |
| Thermal resistance junction to ambient | RθJA | | | 200 | °C/W | (a) | 2 |
| Thermal resistance junction to ambient | RθJA | | | 155 | °C/W | (b) | 2 |
| Forward transconductance | gfs | | 6.1 | | S | VDS= 10V, ID= 2.4A | 4 |
| Input capacitance | Ciss | | 370 | | pF | VDS= 10V, VGS=0V, f=1MHz | 4 |
| Output capacitance | Coss | | 81 | | pF | VDS= 10V, VGS=0V, f=1MHz | 4 |
| Reverse transfer capacitance | Crss | | 46 | | pF | VDS= 10V, VGS=0V, f=1MHz | 4 |
| Turn-on-delay time | td(on) | | 2.2 | | ns | VDD= 10V, VGS= 4.5V, ID= 1A, RG≈6.0Ω | 4 |
| Rise time | tr | | 3.6 | | ns | VDD= 10V, VGS= 4.5V, ID= 1A, RG≈6.0Ω | 4 |
| Turn-off delay time | td(off) | | 17.8 | | ns | VDD= 10V, VGS= 4.5V, ID= 1A, RG≈6.0Ω | 4 |
| Fall time | tf | | 10.5 | | ns | VDD= 10V, VGS= 4.5V, ID= 1A, RG≈6.0Ω | 4 |
| Total gate charge | Qg | | 4.8 | | nC | VDS= 10V, VGS= 4.5V, ID= 2.4A | 4 |
| Gate-source charge | Qgs | | 0.6 | | nC | VDS= 10V, VGS= 4.5V, ID= 2.4A | 4 |
| Gate drain charge | Qgd | | 1 | | nC | VDS= 10V, VGS= 4.5V, ID= 2.4A | 4 |
| Reverse recovery time | trr | | 6.7 | | ns | Tj=25°C, IF= 1.1A, di/dt=100A/ms | 4 |
| Reverse recovery charge | Qrr | | 1.3 | | nC | Tj=25°C, IF= 1.1A, di/dt=100A/ms | 4 |
## CAD (KiCad official)
- Symbol: `ZXMN2B01F`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `zxmn2b01f-etched.step` / `zxmn2b01f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxmn2b01f.step` / `zxmn2b01f.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/ZXMN2B01F.pdf) (8 pp, sha256 `2274ea7b0732a038`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/zxmn2b01f-datasheet.pdf)