component

ZXMN2B01F

Public Made by Adom

by adom

Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorszxmn2b01ffactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 14d ago
viewers zxmn2b01f: viewers · Ray 14d ago
package.json Publish 0.1.0 · Ray 14d ago
page.json Set visibility: public · Ray 14d ago
README.md Publish 0.1.0 · Ray 14d ago
zxmn2b01f-etched.glb Publish 0.1.0 · Ray 14d ago
zxmn2b01f-etched.step zxmn2b01f: factory component page (tier=mfr) · Ray 14d ago
zxmn2b01f-hero.glb zxmn2b01f: hero GLB from the etched model (keeps the MPN mark) · Ray 14d ago
zxmn2b01f-hero.overlay.json Publish 0.1.0 · Ray 14d ago
zxmn2b01f.glb Publish 0.1.0 · Ray 14d ago
zxmn2b01f.kicad_mod Publish 0.1.0 · Ray 14d ago
zxmn2b01f.kicad_sym Publish 0.1.0 · Ray 14d ago
zxmn2b01f.lbr Publish 0.1.0 · Ray 14d ago
zxmn2b01f.step Publish 0.1.0 · Ray 14d ago

ZXMN2B01F

Diodes Incorporated · MOSFETs · SOT-23

ZXMN2B01F from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; low gate drive, RDS(on) 0.100 ohm at VGS=4.5V and 0.200 ohm at VGS=1.8V, absolute maximum VGS ±8 V.
2 S passive Source; continuous body-diode source current IS is 1.4 A and pulsed ISM is 11.8 A.
3 D passive Drain; V(BR)DSS is 20 V minimum and continuous drain current is 2.4 A at VGS=4.5V, Tamb=25°C.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 20 V ID= 250µA, VGS=0V 4
Zero gate voltage drain current IDSS 1 µA VDS= 20V, VGS=0V 4
Gate-body leakage IGSS 100 nA VGS=±8V, VDS=0V 4
Gate-source threshold voltage VGS(th) 0.4 1 V ID= 250µA, VDS=VGS 4
Static drain-source on-state resistance RDS(on) 0.1 Ω VGS= 4.5V, ID= 2.4A 4
Static drain-source on-state resistance RDS(on) 0.15 Ω VGS= 2.5V, ID= 2.0A 4
Static drain-source on-state resistance RDS(on) 0.2 Ω VGS= 1.8V, ID= 1.7A 4
Diode forward voltage VSD 0.73 0.95 V Tj=25°C, IS= 1.2A, VGS=0V 4
Drain-source voltage VDSS 20 V 2
Gate-source voltage VGS -8 8 V 2
Continuous drain current ID 2.4 A VGS= 4.5V; Tamb=25°C(b) 2
Continuous drain current ID 1.9 A VGS= 4.5V; Tamb=70°C(b) 2
Continuous drain current ID 2.1 A VGS= 4.5V; Tamb=25°C(a) 2
Pulsed drain current IDM 11.8 A (c) 2
Continuous source current (body diode) IS 1.4 A (b) 2
Pulsed source current (body diode) ISM 11.8 A (c) 2
Power dissipation PD 625 mW Tamb=25°C(a) 2
Power dissipation PD 806 mW Tamb=25°C(b) 2
Operating and storage temperature range Tj, Tstg -55 150 °C 2
Thermal resistance junction to ambient RθJA 200 °C/W (a) 2
Thermal resistance junction to ambient RθJA 155 °C/W (b) 2
Forward transconductance gfs 6.1 S VDS= 10V, ID= 2.4A 4
Input capacitance Ciss 370 pF VDS= 10V, VGS=0V, f=1MHz 4
Output capacitance Coss 81 pF VDS= 10V, VGS=0V, f=1MHz 4
Reverse transfer capacitance Crss 46 pF VDS= 10V, VGS=0V, f=1MHz 4
Turn-on-delay time td(on) 2.2 ns VDD= 10V, VGS= 4.5V, ID= 1A, RG≈6.0Ω 4
Rise time tr 3.6 ns VDD= 10V, VGS= 4.5V, ID= 1A, RG≈6.0Ω 4
Turn-off delay time td(off) 17.8 ns VDD= 10V, VGS= 4.5V, ID= 1A, RG≈6.0Ω 4
Fall time tf 10.5 ns VDD= 10V, VGS= 4.5V, ID= 1A, RG≈6.0Ω 4
Total gate charge Qg 4.8 nC VDS= 10V, VGS= 4.5V, ID= 2.4A 4
Gate-source charge Qgs 0.6 nC VDS= 10V, VGS= 4.5V, ID= 2.4A 4
Gate drain charge Qgd 1 nC VDS= 10V, VGS= 4.5V, ID= 2.4A 4
Reverse recovery time trr 6.7 ns Tj=25°C, IF= 1.1A, di/dt=100A/ms 4
Reverse recovery charge Qrr 1.3 nC Tj=25°C, IF= 1.1A, di/dt=100A/ms 4

CAD (KiCad official)

  • Symbol: ZXMN2B01F
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: zxmn2b01f-etched.step / zxmn2b01f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxmn2b01f.step / zxmn2b01f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 2274ea7b0732a038, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF