component
ZXMN10A11KTC
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 12d ago |
| viewers | 12d ago |
| package.json | 12d ago |
| page.json | 12d ago |
| README.md | 12d ago |
| zxmn10a11ktc-etched.glb | 12d ago |
| zxmn10a11ktc-etched.step | 12d ago |
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ZXMN10A11KTC
Diodes Incorporated · MOSFETs · TO-252
ZXMN10A11KTC from Diodes Incorporated, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20V absolute maximum, with threshold of 2V to 4V at ID = 250µA. |
| 2 | D | passive | Drain, also connected to the exposed tab; drain-source voltage is 100V maximum with 3.5A continuous drain current at VGS = 10V. |
| 3 | S | passive | Source; continuous body-diode source current is 8.4A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS | 100 | V | TA = 25°C | 2 | ||
| Gate-Source voltage | VGS | -20 | 20 | V | TA = 25°C | 2 | |
| Continuous Drain current | ID | 3.5 | A | VGS = 10V, Note 3, TA = 25°C | 2 | ||
| Continuous Drain current (Note 2) | ID | 2.4 | A | VGS = 10V, Note 2 | 2 | ||
| Pulsed Drain current | IDM | 9.9 | A | VGS = 10V, Note 4 | 2 | ||
| Continuous Source current (Body diode) | IS | 8.4 | A | Note 3 | 2 | ||
| Pulsed Source current (Body diode) | ISM | 9.9 | A | Note 4 | 2 | ||
| Power dissipation | PD | 4.06 | W | Note 2, TA = 25°C | 2 | ||
| Power dissipation | PD | 8.5 | W | Note 3, TA = 25°C | 2 | ||
| Power dissipation | PD | 2.11 | W | Note 6, TA = 25°C | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 30.8 | °C/W | Note 2 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 14.7 | °C/W | Note 3 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 59.1 | °C/W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Lead | RθJL | 1.1 | °C/W | Note 5 | 2 | ||
| Operating and storage temperature range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | ID = 250μA, VGS = 0V | 4 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 100V, VGS = 0V | 4 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 4 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | ID = 250μA, VDS = VGS | 4 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.35 | Ω | VGS = 10V, ID = 2.6A | 4 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 0.45 | Ω | VGS = 6V, ID = 1.3A | 4 | ||
| Forward Transconductance | gfs | 4 | S | VDS = 15V, ID = 2.6A | 4 | ||
| Diode Forward Voltage | VSD | 0.85 | 0.95 | V | IS = 1.85A, VGS = 0V | 4 | |
| Reverse recovery time | trr | 26 | ns | IS = 1.0A, di/dt = 100A/μs | 4 | ||
| Reverse recovery charge | Qrr | 30 | nC | IS = 1.0A, di/dt = 100A/μs | 4 | ||
| Input Capacitance | Ciss | 274 | pF | VDS = 50V, VGS = 0V, f = 1MHz | 4 | ||
| Output Capacitance | Coss | 21 | pF | VDS = 50V, VGS = 0V, f = 1MHz | 4 | ||
| Reverse Transfer Capacitance | Crss | 11 | pF | VDS = 50V, VGS = 0V, f = 1MHz | 4 | ||
| Total Gate Charge | Qg | 3.5 | nC | VGS = 6V, VDS = 50V, ID = 2.5A | 4 | ||
| Total Gate Charge | Qg | 5.4 | nC | VGS = 10V, VDS = 50V, ID = 2.5A | 4 | ||
| Gate-Source Charge | Qgs | 1.4 | nC | VGS = 10V, VDS = 50V, ID = 2.5A | 4 | ||
| Gate-Drain Charge | Qgd | 1.5 | nC | VGS = 10V, VDS = 50V, ID = 2.5A | 4 | ||
| Turn-On Delay Time | tD(on) | 2.7 | ns | VDD = 50V, VGS = 10V, ID = 1.0A, RG ≅ 6Ω | 4 | ||
| Turn-On Rise Time | tr | 1.7 | ns | VDD = 50V, VGS = 10V, ID = 1.0A, RG ≅ 6Ω | 4 | ||
| Turn-Off Delay Time | tD(off) | 7.4 | ns | VDD = 50V, VGS = 10V, ID = 1.0A, RG ≅ 6Ω | 4 | ||
| Turn-Off Fall Time | tf | 3.5 | ns | VDD = 50V, VGS = 10V, ID = 1.0A, RG ≅ 6Ω | 4 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminal Connections: See Diagram • Terminals: Matte Tin Finish annealed over Copper leadframe. | 1 |
CAD (KiCad official)
- Symbol:
ZXMN10A11KTC - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
zxmn10a11ktc-etched.step/zxmn10a11ktc-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxmn10a11ktc.step/zxmn10a11ktc.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
b4b157247df866df, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).