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ZXMHC6A07N8TC

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ZXMHC6A07N8TC

Diodes Incorporated · MOSFETs · SO-8

ZXMHC6A07N8TC from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 N1G input Gate of N-channel MOSFET N1 (low side), VGS rated ±20V.
2 N1D/P1D passive Common drain of N-channel N1 and P-channel P1, the first half-bridge output (drain-source rated 60V N-ch / -60V P-ch).
3 N1S/N2S passive Common source of both N-channel MOSFETs N1 and N2, the low-side return of the H-bridge.
4 N2G input Gate of N-channel MOSFET N2 (low side), VGS rated ±20V.
5 P2G input Gate of P-channel MOSFET P2 (high side), VGS rated ±20V.
6 N2D/P2D passive Common drain of N-channel N2 and P-channel P2, the second half-bridge output (drain-source rated 60V N-ch / -60V P-ch).
7 P1S/P2S passive Common source of both P-channel MOSFETs P1 and P2, the high-side supply connection of the H-bridge.
8 P1G input Gate of P-channel MOSFET P1 (high side), VGS rated ±20V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source voltage (N-channel) VDSS 60 V 2
Drain-Source voltage (P-channel) VDSS -60 V 2
Gate-Source voltage (N-channel) VGS -20 20 V 2
Gate-Source voltage (P-channel) VGS -20 20 V 2
Continuous drain current (N-channel) ID 1.8 A VGS= 10V; TA=25°C (b) 2
Continuous drain current (N-channel) ID 1.4 A VGS= 10V; TA=70°C (b) 2
Continuous drain current (N-channel) ID 1.39 A VGS= 10V; TA=25°C (a) 2
Continuous drain current (N-channel) ID 1.42 A VGS= 10V; TL=25°C (f) 2
Continuous drain current (P-channel) ID -1.42 A VGS= 10V; TA=25°C (b) 2
Continuous drain current (P-channel) ID -1.28 A VGS= 10V; TA=70°C (b) 2
Continuous drain current (P-channel) ID -1.33 A VGS= 10V; TL=25°C (f) 2
Pulsed drain current (N-channel) IDM 7.1 A VGS= 10V; TA=25°C (c) 2
Pulsed drain current (P-channel) IDM -6.03 A VGS= 10V; TA=25°C (c) 2
Continuous source current (body diode) (N-channel) IS 1 A TA =25°C (b) 2
Continuous source current (body diode) (P-channel) IS -1 A TA =25°C (b) 2
Pulsed source current (body diode) (N-channel) ISM 7.1 A TA =25°C (c) 2
Pulsed source current (body diode) (P-channel) ISM -6.03 A TA =25°C (c) 2
Power dissipation PD 0.87 W TA =25°C (a) 2
Power dissipation PD 1.36 W TA =25°C (b) 2
Power dissipation PD 0.9 W TL =25°C (f) 2
Operating and storage temperature range Tj, Tstg -55 150 °C 2
Thermal resistance junction to ambient RθJA 144 °C/W Note (a) 2
Thermal resistance junction to ambient RθJA 92 °C/W Note (b) 2
Thermal resistance junction to ambient RθJA 106 °C/W Note (d) 2
Thermal resistance junction to ambient RθJA 254 °C/W Note (e) 2
Thermal resistance junction to lead RθJL 139 °C/W Note (f) 2
Drain-Source breakdown voltage (N-channel) V(BR)DSS 60 V ID = 250μA, VGS= 0V 4
Zero gate voltage drain current (N-channel) IDSS 0.5 µA VDS= 60V, VGS= 0V 4
Gate-body leakage (N-channel) IGSS -100 100 nA VGS= ±20V, VDS= 0V 4
Gate-source threshold voltage (N-channel) VGS(th) 1 3 V ID= 250μA, VDS= VGS 4
Static drain-source on-state resistance (N-channel) RDS(on) 0.25 Ω VGS= 10V, ID= 1.8A 4
Static drain-source on-state resistance (N-channel) RDS(on) 0.35 Ω VGS= 4.5V, ID= 1.3A 4
Diode forward voltage (N-channel) VSD 0.8 0.95 V IS= 0.45A, VGS= 0V 4
Drain-Source breakdown voltage (P-channel) V(BR)DSS -60 V ID = -250μA, VGS= 0V 7
Zero gate voltage drain current (P-channel) IDSS -0.5 µA VDS= -60V, VGS= 0V 7
Gate-body leakage (P-channel) IGSS -100 100 nA VGS= ±20V, VDS= 0V 7
Gate-source threshold voltage (P-channel) VGS(th) -1 -3 V ID= -250μA, VDS= VGS 7
Static drain-source on-state resistance (P-channel) RDS(on) 0.4 Ω VGS= -10V, ID= -0.9A 7
Static drain-source on-state resistance (P-channel) RDS(on) 0.6 Ω VGS= -4.5V, ID= -0.8A 7
Diode forward voltage (P-channel) VSD -0.85 -0.95 V IS= -0.8A, VGS= 0V 7

CAD (KiCad official)

  • Symbol: ZXMHC6A07N8TC
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: zxmhc6a07n8tc-etched.step / zxmhc6a07n8tc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxmhc6a07n8tc.step / zxmhc6a07n8tc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (11 pp, sha256 04556024b4752d9c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF