component
ZXMHC6A07N8TC
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownZXMHC6A07N8TC
Diodes Incorporated · MOSFETs · SO-8
ZXMHC6A07N8TC from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | N1G | input | Gate of N-channel MOSFET N1 (low side), VGS rated ±20V. |
| 2 | N1D/P1D | passive | Common drain of N-channel N1 and P-channel P1, the first half-bridge output (drain-source rated 60V N-ch / -60V P-ch). |
| 3 | N1S/N2S | passive | Common source of both N-channel MOSFETs N1 and N2, the low-side return of the H-bridge. |
| 4 | N2G | input | Gate of N-channel MOSFET N2 (low side), VGS rated ±20V. |
| 5 | P2G | input | Gate of P-channel MOSFET P2 (high side), VGS rated ±20V. |
| 6 | N2D/P2D | passive | Common drain of N-channel N2 and P-channel P2, the second half-bridge output (drain-source rated 60V N-ch / -60V P-ch). |
| 7 | P1S/P2S | passive | Common source of both P-channel MOSFETs P1 and P2, the high-side supply connection of the H-bridge. |
| 8 | P1G | input | Gate of P-channel MOSFET P1 (high side), VGS rated ±20V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage (N-channel) | VDSS | 60 | V | 2 | |||
| Drain-Source voltage (P-channel) | VDSS | -60 | V | 2 | |||
| Gate-Source voltage (N-channel) | VGS | -20 | 20 | V | 2 | ||
| Gate-Source voltage (P-channel) | VGS | -20 | 20 | V | 2 | ||
| Continuous drain current (N-channel) | ID | 1.8 | A | VGS= 10V; TA=25°C (b) | 2 | ||
| Continuous drain current (N-channel) | ID | 1.4 | A | VGS= 10V; TA=70°C (b) | 2 | ||
| Continuous drain current (N-channel) | ID | 1.39 | A | VGS= 10V; TA=25°C (a) | 2 | ||
| Continuous drain current (N-channel) | ID | 1.42 | A | VGS= 10V; TL=25°C (f) | 2 | ||
| Continuous drain current (P-channel) | ID | -1.42 | A | VGS= 10V; TA=25°C (b) | 2 | ||
| Continuous drain current (P-channel) | ID | -1.28 | A | VGS= 10V; TA=70°C (b) | 2 | ||
| Continuous drain current (P-channel) | ID | -1.33 | A | VGS= 10V; TL=25°C (f) | 2 | ||
| Pulsed drain current (N-channel) | IDM | 7.1 | A | VGS= 10V; TA=25°C (c) | 2 | ||
| Pulsed drain current (P-channel) | IDM | -6.03 | A | VGS= 10V; TA=25°C (c) | 2 | ||
| Continuous source current (body diode) (N-channel) | IS | 1 | A | TA =25°C (b) | 2 | ||
| Continuous source current (body diode) (P-channel) | IS | -1 | A | TA =25°C (b) | 2 | ||
| Pulsed source current (body diode) (N-channel) | ISM | 7.1 | A | TA =25°C (c) | 2 | ||
| Pulsed source current (body diode) (P-channel) | ISM | -6.03 | A | TA =25°C (c) | 2 | ||
| Power dissipation | PD | 0.87 | W | TA =25°C (a) | 2 | ||
| Power dissipation | PD | 1.36 | W | TA =25°C (b) | 2 | ||
| Power dissipation | PD | 0.9 | W | TL =25°C (f) | 2 | ||
| Operating and storage temperature range | Tj, Tstg | -55 | 150 | °C | 2 | ||
| Thermal resistance junction to ambient | RθJA | 144 | °C/W | Note (a) | 2 | ||
| Thermal resistance junction to ambient | RθJA | 92 | °C/W | Note (b) | 2 | ||
| Thermal resistance junction to ambient | RθJA | 106 | °C/W | Note (d) | 2 | ||
| Thermal resistance junction to ambient | RθJA | 254 | °C/W | Note (e) | 2 | ||
| Thermal resistance junction to lead | RθJL | 139 | °C/W | Note (f) | 2 | ||
| Drain-Source breakdown voltage (N-channel) | V(BR)DSS | 60 | V | ID = 250μA, VGS= 0V | 4 | ||
| Zero gate voltage drain current (N-channel) | IDSS | 0.5 | µA | VDS= 60V, VGS= 0V | 4 | ||
| Gate-body leakage (N-channel) | IGSS | -100 | 100 | nA | VGS= ±20V, VDS= 0V | 4 | |
| Gate-source threshold voltage (N-channel) | VGS(th) | 1 | 3 | V | ID= 250μA, VDS= VGS | 4 | |
| Static drain-source on-state resistance (N-channel) | RDS(on) | 0.25 | Ω | VGS= 10V, ID= 1.8A | 4 | ||
| Static drain-source on-state resistance (N-channel) | RDS(on) | 0.35 | Ω | VGS= 4.5V, ID= 1.3A | 4 | ||
| Diode forward voltage (N-channel) | VSD | 0.8 | 0.95 | V | IS= 0.45A, VGS= 0V | 4 | |
| Drain-Source breakdown voltage (P-channel) | V(BR)DSS | -60 | V | ID = -250μA, VGS= 0V | 7 | ||
| Zero gate voltage drain current (P-channel) | IDSS | -0.5 | µA | VDS= -60V, VGS= 0V | 7 | ||
| Gate-body leakage (P-channel) | IGSS | -100 | 100 | nA | VGS= ±20V, VDS= 0V | 7 | |
| Gate-source threshold voltage (P-channel) | VGS(th) | -1 | -3 | V | ID= -250μA, VDS= VGS | 7 | |
| Static drain-source on-state resistance (P-channel) | RDS(on) | 0.4 | Ω | VGS= -10V, ID= -0.9A | 7 | ||
| Static drain-source on-state resistance (P-channel) | RDS(on) | 0.6 | Ω | VGS= -4.5V, ID= -0.8A | 7 | ||
| Diode forward voltage (P-channel) | VSD | -0.85 | -0.95 | V | IS= -0.8A, VGS= 0V | 7 |
CAD (KiCad official)
- Symbol:
ZXMHC6A07N8TC - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
zxmhc6a07n8tc-etched.step/zxmhc6a07n8tc-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxmhc6a07n8tc.step/zxmhc6a07n8tc.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (11 pp, sha256
04556024b4752d9c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).