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ZXMC6A09DN8TA

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ZXMC6A09DN8TA

Diodes Incorporated · MOSFETs · SO-8

ZXMC6A09DN8TA from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of Q1, the N-channel MOSFET (60V, 5.1A).
2 G1 input Gate of Q1, the N-channel MOSFET, with a low gate threshold and VGS rating of 20V.
3 S2 passive Source of Q2, the P-channel MOSFET (-60V, -4.8A).
4 G2 input Gate of Q2, the P-channel MOSFET, with a low gate threshold and VGS rating of 20V.
5 D2 passive Drain of Q2, the P-channel MOSFET, and tied internally to pin 6.
6 D2 passive Drain of Q2, the P-channel MOSFET, and tied internally to pin 5.
7 D1 passive Drain of Q1, the N-channel MOSFET, and tied internally to pin 8.
8 D1 passive Drain of Q1, the N-channel MOSFET, and tied internally to pin 7.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage (N-Channel) V(BR)DSS 60 V ID=250µA, VGS=0V 4
Zero Gate Voltage Drain Current (N-Channel) IDSS 1 µA VDS=60V, VGS=0V 4
Gate-Body Leakage (N-Channel) IGSS 100 nA VGS=20V, VDS=0V 4
Gate-Source Threshold Voltage (N-Channel) VGS(th) 1 V ID=250µA, VDS=VGS 4
Static Drain-Source On-State Resistance (N-Channel) RDS(on) 0.045 Ω VGS=10V, ID=8.2A 4
Static Drain-Source On-State Resistance (N-Channel) RDS(on) 0.07 Ω VGS=4.5V, ID=7.4A 4
Diode Forward Voltage (N-Channel) VSD 0.95 V TJ=25°C, IS=6.6A, VGS=0V 4
Drain-Source Breakdown Voltage (P-Channel) V(BR)DSS -60 V ID=-250µA, VGS=0V 5
Zero Gate Voltage Drain Current (P-Channel) IDSS -1 µA VDS=-60V, VGS=0V 5
Gate-Body Leakage (P-Channel) IGSS 100 nA VGS=20V, VDS=0V 5
Gate-Source Threshold Voltage (P-Channel) VGS(th) -1 V ID=-250µA, VDS=VGS 5
Static Drain-Source On-State Resistance (P-Channel) RDS(on) 0.055 Ω VGS=-10V, ID=-3.5A 5
Static Drain-Source On-State Resistance (P-Channel) RDS(on) 0.08 Ω VGS=-4.5V, ID=-2.9A 5
Diode Forward Voltage (P-Channel) VSD -0.95 V TJ=25°C, IS=-4.2A, VGS=0V 5
Drain-Source Voltage (N-Channel) VDSS 60 V N-Channel 2
Drain-Source Voltage (P-Channel) VDSS -60 V P-Channel 2
Gate-Source Voltage (N-Channel) VGS 20 V N-Channel 2
Gate-Source Voltage (P-Channel) VGS 20 V P-Channel 2
Continuous Drain Current (N-Channel) ID 5.1 A VGS=10V; TA=25C (b)(d) 2
Continuous Drain Current (N-Channel) ID 4.1 A Second printed row, VGS=10V, footnotes (b)(d); temperature not printed 2
Continuous Drain Current (N-Channel) ID 3.9 A VGS=10V; TA=25C (a)(d) 2
Continuous Drain Current (P-Channel) ID -4.8 A VGS=10V; TA=25C (b)(d) 2
Continuous Drain Current (P-Channel) ID -3.8 A Second printed row, VGS=10V, footnotes (b)(d); temperature not printed 2
Continuous Drain Current (P-Channel) ID -3.7 A VGS=10V; TA=25C (a)(d) 2
Pulsed Drain Current (N-Channel) IDM 25 A Repetitive rating, footnote (c) 2
Pulsed Drain Current (P-Channel) IDM -23 A Repetitive rating, footnote (c) 2
Continuous Source Current (Body Diode) (N-Channel) IS 3.5 A footnote (b) 2
Continuous Source Current (Body Diode) (P-Channel) IS -3.3 A footnote (b) 2
Pulsed Source Current (Body Diode) (N-Channel) ISM 25.4 A footnote (c) 2
Pulsed Source Current (Body Diode) (P-Channel) ISM -23.8 A footnote (c) 2
Power Dissipation PD 1.25 W TA=25°C (a)(d) 2
Power Dissipation PD 1.8 W TA=25°C (a)(e) 2
Power Dissipation PD 2.1 W TA=25°C (b)(d) 2
Operating and Storage Temperature Range Tj:Tstg -55 150 °C 2
Junction to Ambient RθJA 100 °C/W footnotes (a)(d) 2
Junction to Ambient RθJA 69 °C/W footnotes (b)(e) 2
Junction to Ambient RθJA 58 °C/W footnotes (b)(d) 2

CAD (KiCad official)

  • Symbol: ZXMC6A09DN8TA
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: zxmc6a09dn8ta-etched.step / zxmc6a09dn8ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxmc6a09dn8ta.step / zxmc6a09dn8ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (10 pp, sha256 49f96a992848b56c, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF