component
ZXMC6A09DN8TA
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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownZXMC6A09DN8TA
Diodes Incorporated · MOSFETs · SO-8
ZXMC6A09DN8TA from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of Q1, the N-channel MOSFET (60V, 5.1A). |
| 2 | G1 | input | Gate of Q1, the N-channel MOSFET, with a low gate threshold and VGS rating of 20V. |
| 3 | S2 | passive | Source of Q2, the P-channel MOSFET (-60V, -4.8A). |
| 4 | G2 | input | Gate of Q2, the P-channel MOSFET, with a low gate threshold and VGS rating of 20V. |
| 5 | D2 | passive | Drain of Q2, the P-channel MOSFET, and tied internally to pin 6. |
| 6 | D2 | passive | Drain of Q2, the P-channel MOSFET, and tied internally to pin 5. |
| 7 | D1 | passive | Drain of Q1, the N-channel MOSFET, and tied internally to pin 8. |
| 8 | D1 | passive | Drain of Q1, the N-channel MOSFET, and tied internally to pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (N-Channel) | V(BR)DSS | 60 | V | ID=250µA, VGS=0V | 4 | ||
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 1 | µA | VDS=60V, VGS=0V | 4 | ||
| Gate-Body Leakage (N-Channel) | IGSS | 100 | nA | VGS=20V, VDS=0V | 4 | ||
| Gate-Source Threshold Voltage (N-Channel) | VGS(th) | 1 | V | ID=250µA, VDS=VGS | 4 | ||
| Static Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.045 | Ω | VGS=10V, ID=8.2A | 4 | ||
| Static Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.07 | Ω | VGS=4.5V, ID=7.4A | 4 | ||
| Diode Forward Voltage (N-Channel) | VSD | 0.95 | V | TJ=25°C, IS=6.6A, VGS=0V | 4 | ||
| Drain-Source Breakdown Voltage (P-Channel) | V(BR)DSS | -60 | V | ID=-250µA, VGS=0V | 5 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | µA | VDS=-60V, VGS=0V | 5 | ||
| Gate-Body Leakage (P-Channel) | IGSS | 100 | nA | VGS=20V, VDS=0V | 5 | ||
| Gate-Source Threshold Voltage (P-Channel) | VGS(th) | -1 | V | ID=-250µA, VDS=VGS | 5 | ||
| Static Drain-Source On-State Resistance (P-Channel) | RDS(on) | 0.055 | Ω | VGS=-10V, ID=-3.5A | 5 | ||
| Static Drain-Source On-State Resistance (P-Channel) | RDS(on) | 0.08 | Ω | VGS=-4.5V, ID=-2.9A | 5 | ||
| Diode Forward Voltage (P-Channel) | VSD | -0.95 | V | TJ=25°C, IS=-4.2A, VGS=0V | 5 | ||
| Drain-Source Voltage (N-Channel) | VDSS | 60 | V | N-Channel | 2 | ||
| Drain-Source Voltage (P-Channel) | VDSS | -60 | V | P-Channel | 2 | ||
| Gate-Source Voltage (N-Channel) | VGS | 20 | V | N-Channel | 2 | ||
| Gate-Source Voltage (P-Channel) | VGS | 20 | V | P-Channel | 2 | ||
| Continuous Drain Current (N-Channel) | ID | 5.1 | A | VGS=10V; TA=25C (b)(d) | 2 | ||
| Continuous Drain Current (N-Channel) | ID | 4.1 | A | Second printed row, VGS=10V, footnotes (b)(d); temperature not printed | 2 | ||
| Continuous Drain Current (N-Channel) | ID | 3.9 | A | VGS=10V; TA=25C (a)(d) | 2 | ||
| Continuous Drain Current (P-Channel) | ID | -4.8 | A | VGS=10V; TA=25C (b)(d) | 2 | ||
| Continuous Drain Current (P-Channel) | ID | -3.8 | A | Second printed row, VGS=10V, footnotes (b)(d); temperature not printed | 2 | ||
| Continuous Drain Current (P-Channel) | ID | -3.7 | A | VGS=10V; TA=25C (a)(d) | 2 | ||
| Pulsed Drain Current (N-Channel) | IDM | 25 | A | Repetitive rating, footnote (c) | 2 | ||
| Pulsed Drain Current (P-Channel) | IDM | -23 | A | Repetitive rating, footnote (c) | 2 | ||
| Continuous Source Current (Body Diode) (N-Channel) | IS | 3.5 | A | footnote (b) | 2 | ||
| Continuous Source Current (Body Diode) (P-Channel) | IS | -3.3 | A | footnote (b) | 2 | ||
| Pulsed Source Current (Body Diode) (N-Channel) | ISM | 25.4 | A | footnote (c) | 2 | ||
| Pulsed Source Current (Body Diode) (P-Channel) | ISM | -23.8 | A | footnote (c) | 2 | ||
| Power Dissipation | PD | 1.25 | W | TA=25°C (a)(d) | 2 | ||
| Power Dissipation | PD | 1.8 | W | TA=25°C (a)(e) | 2 | ||
| Power Dissipation | PD | 2.1 | W | TA=25°C (b)(d) | 2 | ||
| Operating and Storage Temperature Range | Tj:Tstg | -55 | 150 | °C | 2 | ||
| Junction to Ambient | RθJA | 100 | °C/W | footnotes (a)(d) | 2 | ||
| Junction to Ambient | RθJA | 69 | °C/W | footnotes (b)(e) | 2 | ||
| Junction to Ambient | RθJA | 58 | °C/W | footnotes (b)(d) | 2 |
CAD (KiCad official)
- Symbol:
ZXMC6A09DN8TA - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
zxmc6a09dn8ta-etched.step/zxmc6a09dn8ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxmc6a09dn8ta.step/zxmc6a09dn8ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (10 pp, sha256
49f96a992848b56c, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).