# ZJA3600BSABR

**ZJW** · Instrumentation OpAmps · SOIC-8

ZJA3600BSABR from ZJW, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | RG | input | Gain setting pin; place the gain resistor between pin 1 and pin 8. |
| 2 | -IN | input | Inverting analog input of the instrumentation amplifier. |
| 3 | +IN | input | Non-inverting analog input of the instrumentation amplifier. |
| 4 | -VS | power_in | Negative power supply; the device operates from ±2.4 V to ±18 V supply voltage. |
| 5 | REF | input | Reference input that must be driven by a low impedance source. |
| 6 | OUT | output | Amplifier output; rail-to-rail output. |
| 7 | +VS | power_in | Positive power supply; the device operates from ±2.4 V to ±18 V supply voltage. |
| 8 | RG | input | Gain setting pin; place the gain resistor between pin 1 and pin 8. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ZJW |
| Package | SOIC-8 |
| Category | Operational Amplifier/Comparator |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating Range |  | 2.4 |  | 18 | V | Supply voltage | 8 |
| Quiescent Current | ISY |  | 3.3 | 3.8 | mA |  | 8 |
| Quiescent Current over temperature | ISY |  |  | 3.8 | mA | Over specified temperature range | 8 |
| Specified Temperature Range |  | -40 |  | 125 | °C |  | 8 |
| Supply Voltage |  | -20 |  | 20 | V | ±20 V rating | 5 |
| Input Current |  | -10 |  | 10 | mA | ±10 mA | 5 |
| Operating Temperature Range |  | -40 |  | 125 | °C |  | 5 |
| Storage Temperature Range |  | -65 |  | 150 | °C |  | 5 |
| Maximum Reflow Temperature |  |  |  | 150 | °C | IPC/JEDEC J-STD-020 | 5 |
| Lead Temperature, Soldering |  |  |  | 260 | °C | 10 sec | 5 |
| Electrostatic Discharge HBM |  |  |  | 3 | kV | Human Body Model | 5 |
| Electrostatic Discharge CDM |  |  |  | 2 | kV | Charged Device Model | 5 |
| Thermal Resistance junction-to-ambient | θJA |  | 158 |  | °C/W | SOIC-8 | 5 |
| Thermal Resistance junction-to-case | θJC |  | 43 |  | °C/W | SOIC-8 | 5 |
| Range of Gain | G | 1 |  | 10000 | V/V | G = 1 + (49.4 kΩ/RG) | 6 |
| Gain Error G=1 | GE |  | 0.0001 | 0.001 | % | B Grade, VOUT = ±10 V, G = 1 | 6 |
| Gain Error G=1 over temperature | GE |  |  | 0.003 | % | B Grade, over specified temperature range, VOUT = ±10 V, G = 1 | 6 |
| Gain Error G=10 | GE |  | 0.01 | 0.1 | % | B Grade, VOUT = ±10 V, G = 10 | 6 |
| Gain Error G=10 over temperature | GE |  |  | 0.25 | % | B Grade, over specified temperature range, VOUT = ±10 V, G = 10 | 6 |
| Gain Error G=100 | GE |  | 0.01 | 0.1 | % | B Grade, VOUT = ±10 V, G = 100 | 6 |
| Gain Error G=100 over temperature | GE |  |  | 0.25 | % | B Grade, over specified temperature range, VOUT = ±10 V, G = 100 | 6 |
| Gain Error G=1000 | GE |  | 0.01 | 0.1 | % | B Grade, VOUT = ±10 V, G = 1000 | 6 |
| Gain Error G=1000 over temperature | GE |  |  | 0.25 | % | B Grade, over specified temperature range, VOUT = ±10 V, G = 1000 | 6 |
| Gain vs Temperature G=1 |  |  | 0.1 | 0.5 | ppm/°C | B Grade, G = 1, over specified temperature range | 6 |
| Gain vs Temperature G>11 |  | -50 | 10 | 50 | ppm/°C | G > 11, over specified temperature range | 6 |
| Input Offset Voltage | VOSI |  | 5 | 25 | µV | B Grade | 6 |
| Input Offset Voltage over temperature | VOSI |  |  | 85 | µV | B Grade, over specified temperature range | 6 |
| Average TC Input Offset Voltage | TCVOSI |  | 0.6 |  | µV/°C | Over specified temperature range | 6 |
| Output Offset Voltage | VOSO |  | 30 | 150 | µV | B Grade | 7 |
| Output Offset Voltage over temperature | VOSO |  |  | 200 | µV | B Grade, over specified temperature range | 7 |
| Average TC Output Offset Voltage | TCVOSO |  | 2 |  | µV/°C | B Grade, over specified temperature range | 7 |
| PSRR G=1 | PSRR | 110 | 130 |  | dB | Vs = ±2.4 V to ±18 V, B Grade | 7 |
| PSRR G=10 | PSRR | 130 | 140 |  | dB | Vs = ±2.4 V to ±18 V, B Grade | 7 |
| PSRR G=100 | PSRR | 130 | 140 |  | dB | Vs = ±2.4 V to ±18 V, B Grade | 7 |
| PSRR G=1000 | PSRR | 140 | 150 |  | dB | Vs = ±2.4 V to ±18 V, B Grade | 7 |
| Input Bias Current | IB |  | 5 | 25 | pA |  | 7 |
| Average TC Input Bias Current | TCIB |  | 1 |  | pA/°C | Over specified temperature range | 7 |
| Input Offset Current | IOS |  | 2 | 20 | pA |  | 7 |
| Average TC Input Offset Current | TCIOS |  | 1 |  | pA/°C | Over specified temperature range | 7 |
| CMRR G=1 | CMRR | 105 | 120 |  | dB | DC to 60 Hz, VCM = -10 V to +10 V, B Grade | 7 |
| CMRR G=1 over temperature | CMRR | 94 |  |  | dB | Over specified temperature range, DC to 60 Hz, VCM = -10 V to +10 V | 7 |
| CMRR G=10 | CMRR | 120 | 140 |  | dB | DC to 60 Hz, VCM = -10 V to +10 V, B Grade | 7 |
| CMRR G=100 | CMRR | 140 | 150 |  | dB | DC to 60 Hz, VCM = -10 V to +10 V, B Grade | 7 |
| CMRR G=1000 | CMRR | 140 | 150 |  | dB | DC to 60 Hz, VCM = -10 V to +10 V, B Grade | 7 |
| Short-Circuit Current source | ISC |  | 90 |  | mA | source | 8 |
| Short-Circuit Current sink | ISC |  | 50 |  | mA | sink | 8 |
| Small Signal Bandwidth -3 dB G=1 |  |  | 3200 |  | kHz | G = 1 | 8 |
| Small Signal Bandwidth -3 dB G=10 |  |  | 625 |  | kHz | G = 10 | 8 |
| Small Signal Bandwidth -3 dB G=100 |  |  | 70 |  | kHz | G = 100 | 8 |
| Small Signal Bandwidth -3 dB G=1000 |  |  | 9 |  | kHz | G = 1000 | 8 |
| Slew Rate | SR | 0.75 | 2 |  | V/µs |  | 8 |
| Settling Time to 0.01% G=1 to 10 | tS |  | 6.5 |  | µs | G = 1 to 10, 0 to 10 V step | 8 |
| Settling Time to 0.01% G=100 | tS |  | 23 |  | µs | G = 100, 0 to 10 V step | 8 |
| Settling Time to 0.01% G=1000 | tS |  | 213 |  | µs | G = 1000, 0 to 10 V step | 8 |
| Input Voltage Noise f=1 kHz | eni |  | 8 |  | nV/√Hz | f = 1 kHz | 8 |
| Output Voltage Noise f=1 kHz | eno |  | 75 |  | nV/√Hz | f = 1 kHz | 8 |
| RTI Voltage Noise 0.1 Hz to 10 Hz G=1 |  |  | 2 |  | µVP-P | G = 1, f = 0.1 Hz to 10 Hz | 8 |
| RTI Voltage Noise 0.1 Hz to 10 Hz G=10 |  |  | 0.9 |  | µVP-P | G = 10, f = 0.1 Hz to 10 Hz | 8 |
| RTI Voltage Noise 0.1 Hz to 10 Hz G=100 to 1000 |  |  | 0.9 |  | µVP-P | G = 100 to 1000, f = 0.1 Hz to 10 Hz | 8 |
| Input Current Noise f=1 kHz |  |  | 0.8 |  | fA/√Hz | f = 1 kHz | 8 |
| Input Current Noise 0.1 Hz to 10 Hz |  |  | 6 |  | pAP-P | f = 0.1 Hz to 10 Hz | 8 |
| Reference Input Resistance | RIN |  | 10 |  | kΩ | Reference input, VIN+, VIN-, VREF = 0 | 8 |
| Reference Input Bias Current | IIN |  | 0.003 | 0.03 | µA | Reference input, VIN+, VIN-, VREF = 0 | 8 |
| Reference Gain to Output |  | -0.0001 | 1 | 0.0001 | V/V | Reference gain to output | 8 |

## CAD (KiCad official)

- Symbol: `ZJA3600BSABR`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `zja3600bsabr-etched.step` / `zja3600bsabr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zja3600bsabr.step` / `zja3600bsabr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ZJW datasheet](docs/zja3600bsabr-datasheet.pdf) (28 pp, sha256 `e416bb66e47aca75`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/zja3600bsabr-datasheet.pdf)