component
ZJA3600BSABR
Public Made by Adomby adom
ZJW Instrumentation OpAmps, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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ZJA3600BSABR
ZJW · Instrumentation OpAmps · SOIC-8
ZJA3600BSABR from ZJW, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | RG | input | Gain setting pin; place the gain resistor between pin 1 and pin 8. |
| 2 | -IN | input | Inverting analog input of the instrumentation amplifier. |
| 3 | +IN | input | Non-inverting analog input of the instrumentation amplifier. |
| 4 | -VS | power_in | Negative power supply; the device operates from ±2.4 V to ±18 V supply voltage. |
| 5 | REF | input | Reference input that must be driven by a low impedance source. |
| 6 | OUT | output | Amplifier output; rail-to-rail output. |
| 7 | +VS | power_in | Positive power supply; the device operates from ±2.4 V to ±18 V supply voltage. |
| 8 | RG | input | Gain setting pin; place the gain resistor between pin 1 and pin 8. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ZJW |
| Package | SOIC-8 |
| Category | Operational Amplifier/Comparator |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating Range | 2.4 | 18 | V | Supply voltage | 8 | ||
| Quiescent Current | ISY | 3.3 | 3.8 | mA | 8 | ||
| Quiescent Current over temperature | ISY | 3.8 | mA | Over specified temperature range | 8 | ||
| Specified Temperature Range | -40 | 125 | °C | 8 | |||
| Supply Voltage | -20 | 20 | V | ±20 V rating | 5 | ||
| Input Current | -10 | 10 | mA | ±10 mA | 5 | ||
| Operating Temperature Range | -40 | 125 | °C | 5 | |||
| Storage Temperature Range | -65 | 150 | °C | 5 | |||
| Maximum Reflow Temperature | 150 | °C | IPC/JEDEC J-STD-020 | 5 | |||
| Lead Temperature, Soldering | 260 | °C | 10 sec | 5 | |||
| Electrostatic Discharge HBM | 3 | kV | Human Body Model | 5 | |||
| Electrostatic Discharge CDM | 2 | kV | Charged Device Model | 5 | |||
| Thermal Resistance junction-to-ambient | θJA | 158 | °C/W | SOIC-8 | 5 | ||
| Thermal Resistance junction-to-case | θJC | 43 | °C/W | SOIC-8 | 5 | ||
| Range of Gain | G | 1 | 10000 | V/V | G = 1 + (49.4 kΩ/RG) | 6 | |
| Gain Error G=1 | GE | 0.0001 | 0.001 | % | B Grade, VOUT = ±10 V, G = 1 | 6 | |
| Gain Error G=1 over temperature | GE | 0.003 | % | B Grade, over specified temperature range, VOUT = ±10 V, G = 1 | 6 | ||
| Gain Error G=10 | GE | 0.01 | 0.1 | % | B Grade, VOUT = ±10 V, G = 10 | 6 | |
| Gain Error G=10 over temperature | GE | 0.25 | % | B Grade, over specified temperature range, VOUT = ±10 V, G = 10 | 6 | ||
| Gain Error G=100 | GE | 0.01 | 0.1 | % | B Grade, VOUT = ±10 V, G = 100 | 6 | |
| Gain Error G=100 over temperature | GE | 0.25 | % | B Grade, over specified temperature range, VOUT = ±10 V, G = 100 | 6 | ||
| Gain Error G=1000 | GE | 0.01 | 0.1 | % | B Grade, VOUT = ±10 V, G = 1000 | 6 | |
| Gain Error G=1000 over temperature | GE | 0.25 | % | B Grade, over specified temperature range, VOUT = ±10 V, G = 1000 | 6 | ||
| Gain vs Temperature G=1 | 0.1 | 0.5 | ppm/°C | B Grade, G = 1, over specified temperature range | 6 | ||
| Gain vs Temperature G>11 | -50 | 10 | 50 | ppm/°C | G > 11, over specified temperature range | 6 | |
| Input Offset Voltage | VOSI | 5 | 25 | µV | B Grade | 6 | |
| Input Offset Voltage over temperature | VOSI | 85 | µV | B Grade, over specified temperature range | 6 | ||
| Average TC Input Offset Voltage | TCVOSI | 0.6 | µV/°C | Over specified temperature range | 6 | ||
| Output Offset Voltage | VOSO | 30 | 150 | µV | B Grade | 7 | |
| Output Offset Voltage over temperature | VOSO | 200 | µV | B Grade, over specified temperature range | 7 | ||
| Average TC Output Offset Voltage | TCVOSO | 2 | µV/°C | B Grade, over specified temperature range | 7 | ||
| PSRR G=1 | PSRR | 110 | 130 | dB | Vs = ±2.4 V to ±18 V, B Grade | 7 | |
| PSRR G=10 | PSRR | 130 | 140 | dB | Vs = ±2.4 V to ±18 V, B Grade | 7 | |
| PSRR G=100 | PSRR | 130 | 140 | dB | Vs = ±2.4 V to ±18 V, B Grade | 7 | |
| PSRR G=1000 | PSRR | 140 | 150 | dB | Vs = ±2.4 V to ±18 V, B Grade | 7 | |
| Input Bias Current | IB | 5 | 25 | pA | 7 | ||
| Average TC Input Bias Current | TCIB | 1 | pA/°C | Over specified temperature range | 7 | ||
| Input Offset Current | IOS | 2 | 20 | pA | 7 | ||
| Average TC Input Offset Current | TCIOS | 1 | pA/°C | Over specified temperature range | 7 | ||
| CMRR G=1 | CMRR | 105 | 120 | dB | DC to 60 Hz, VCM = -10 V to +10 V, B Grade | 7 | |
| CMRR G=1 over temperature | CMRR | 94 | dB | Over specified temperature range, DC to 60 Hz, VCM = -10 V to +10 V | 7 | ||
| CMRR G=10 | CMRR | 120 | 140 | dB | DC to 60 Hz, VCM = -10 V to +10 V, B Grade | 7 | |
| CMRR G=100 | CMRR | 140 | 150 | dB | DC to 60 Hz, VCM = -10 V to +10 V, B Grade | 7 | |
| CMRR G=1000 | CMRR | 140 | 150 | dB | DC to 60 Hz, VCM = -10 V to +10 V, B Grade | 7 | |
| Short-Circuit Current source | ISC | 90 | mA | source | 8 | ||
| Short-Circuit Current sink | ISC | 50 | mA | sink | 8 | ||
| Small Signal Bandwidth -3 dB G=1 | 3200 | kHz | G = 1 | 8 | |||
| Small Signal Bandwidth -3 dB G=10 | 625 | kHz | G = 10 | 8 | |||
| Small Signal Bandwidth -3 dB G=100 | 70 | kHz | G = 100 | 8 | |||
| Small Signal Bandwidth -3 dB G=1000 | 9 | kHz | G = 1000 | 8 | |||
| Slew Rate | SR | 0.75 | 2 | V/µs | 8 | ||
| Settling Time to 0.01% G=1 to 10 | tS | 6.5 | µs | G = 1 to 10, 0 to 10 V step | 8 | ||
| Settling Time to 0.01% G=100 | tS | 23 | µs | G = 100, 0 to 10 V step | 8 | ||
| Settling Time to 0.01% G=1000 | tS | 213 | µs | G = 1000, 0 to 10 V step | 8 | ||
| Input Voltage Noise f=1 kHz | eni | 8 | nV/√Hz | f = 1 kHz | 8 | ||
| Output Voltage Noise f=1 kHz | eno | 75 | nV/√Hz | f = 1 kHz | 8 | ||
| RTI Voltage Noise 0.1 Hz to 10 Hz G=1 | 2 | µVP-P | G = 1, f = 0.1 Hz to 10 Hz | 8 | |||
| RTI Voltage Noise 0.1 Hz to 10 Hz G=10 | 0.9 | µVP-P | G = 10, f = 0.1 Hz to 10 Hz | 8 | |||
| RTI Voltage Noise 0.1 Hz to 10 Hz G=100 to 1000 | 0.9 | µVP-P | G = 100 to 1000, f = 0.1 Hz to 10 Hz | 8 | |||
| Input Current Noise f=1 kHz | 0.8 | fA/√Hz | f = 1 kHz | 8 | |||
| Input Current Noise 0.1 Hz to 10 Hz | 6 | pAP-P | f = 0.1 Hz to 10 Hz | 8 | |||
| Reference Input Resistance | RIN | 10 | kΩ | Reference input, VIN+, VIN-, VREF = 0 | 8 | ||
| Reference Input Bias Current | IIN | 0.003 | 0.03 | µA | Reference input, VIN+, VIN-, VREF = 0 | 8 | |
| Reference Gain to Output | -0.0001 | 1 | 0.0001 | V/V | Reference gain to output | 8 |
CAD (KiCad official)
- Symbol:
ZJA3600BSABR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
zja3600bsabr-etched.step/zja3600bsabr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zja3600bsabr.step/zja3600bsabr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ZJW datasheet (28 pp, sha256
e416bb66e47aca75, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).