# ZABG6003JA16TC

**Diodes Incorporated** · Power Management - Specialized · QFN-16-EP(3x3)

ZABG6003JA16TC from Diodes Incorporated, in a QFN-16-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D2 | output | Drain supply connection for GaAs FET 2, regulated voltage approximately 2.0V with current limited to 10mA internally. |
| 2 | G2 | output | Gate bias output for GaAs FET 2, voltage range -2.5V to +1.0V with current limited to ±60µA. |
| 3 | D3 | output | Drain supply connection for GaAs FET 3, regulated voltage approximately 2.0V with current limited to 10mA internally. |
| 4 | G3 | output | Gate bias output for GaAs FET 3, voltage range -2.5V to +1.0V with current limited to ±60µA. |
| 5 | Gnd | power_in | Ground reference connection. |
| 6 | CSUB | power_out | Negative rail output providing regulated -2.0V ±0.5V supply, requires external 47nF capacitor for switched-capacitor DC-DC converter. |
| 7 | RCAL1 | passive | Resistor connection for drain current programming of D1 and D4 stages, external resistor sets drain current 4mA to 15mA. |
| 8 | G6 | output | Gate bias output for GaAs FET 6, voltage range -2.5V to +1.0V with current limited to ±60µA. |
| 9 | D6 | output | Drain supply connection for GaAs FET 6, regulated voltage approximately 2.0V with current limited to 10mA internally. |
| 10 | G5 | output | Gate bias output for GaAs FET 5, voltage range -2.5V to +1.0V with current limited to ±60µA. |
| 11 | D5 | output | Drain supply connection for GaAs FET 5, regulated voltage approximately 2.0V with current limited to 10mA internally. |
| 12 | G4 | output | Gate bias output for GaAs FET 4, voltage range -2.5V to +1.0V with current limited to ±60µA. |
| 13 | D4 | output | Drain supply connection for GaAs FET 4, regulated voltage approximately 2.0V with current programmable 4mA to 15mA via RCAL1. |
| 14 | VDD | power_in | Supply voltage input, operating range 2.1V to 5.5V, absolute maximum rating +6.0V. |
| 15 | D1 | output | Drain supply connection for GaAs FET 1, regulated voltage approximately 2.0V with current programmable 4mA to 15mA via RCAL1. |
| 16 | G1 | output | Gate bias output for GaAs FET 1, voltage range -2.5V to +1.0V with current limited to ±60µA. |
| 17 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | QFN-16-EP(3x3) |
| Category | Power Management (PMIC) |
| Pins | 17 |

## CAD (KiCad official)

- Symbol: `ZABG6003JA16TC`
- Footprint: `Package_DFN_QFN:QFN-16-1EP_3x3mm_P0.5mm_EP1.7x1.7mm`
- 3D model: QFN-16-EP(3x3) (KiCad packages3D, STEP)
- 3D model files: `zabg6003ja16tc-etched.step` / `zabg6003ja16tc-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zabg6003ja16tc.step` / `zabg6003ja16tc.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588883931546726400) (8 pp, sha256 `5e4122d29e46343d`, retrieved 2026-09-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/zabg6003ja16tc-datasheet.pdf)