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Z0409MB

Public Made by Adom

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STMicroelectronics Thyristors (SCR)/Modules, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Z0409MB

STMicroelectronics · Thyristors (SCR)/Modules · DPAK

Z0409MB from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal for triggering the triac with maximum peak gate current 1.2 A (tp = 20 µs) and maximum power dissipation 0.5 W.
2 A1 bidirectional Anode 1 main current terminal rated for maximum 4 A RMS on-state current and 600 V repetitive peak off-state voltage (Tj = 125 °C).
3 A2 bidirectional Anode 2 main current terminal rated for maximum 4 A RMS on-state current and 600 V repetitive peak off-state voltage (Tj = 125 °C), connected to package tab for heat dissipation.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package DPAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current IGT(1) 10 mA VD = 12 V, RL = 33 Ω 2
Gate trigger voltage VGT 1.3 V VD = 12 V, RL = 33 Ω 2
Gate non-trigger voltage VGD 0.2 V VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C 2
Latching current, quadrants I-III-IV IL 15 mA IG = 1.2 x IGT, I-III-IV 2
Latching current, quadrant II IL 25 mA IG = 1.2 x IGT, II 2
Holding current IH(2) 10 mA IT = 500 mA, gate open 2
Critical rate of rise of off-state voltage dV/dt(2) 100 V/µs VD = 67 % VDRM; VR = 67 % VRRM, gate open, Tj = 110 °C 2
Critical rate of decrease of main current (commutation) (dV/dt)c(2) 2 V/µs (dI/dt)c = 1.8 A/ms, Tj = 110 °C 2
On-state voltage VTM(1) 2 V ITM = 5.5 A, tp = 380 µs, Tj = 25 °C 2
Threshold voltage VTO(1) 0.95 V Tj = 125 °C 2
Dynamic resistance RD(1) 180 mΩ Tj = 125 °C 2
Repetitive peak off-state current IDRM/IRRM 5 µA VD = VR = VDRM = VRRM, Tj = 25 °C 2
Repetitive peak off-state current IDRM/IRRM 0.5 mA VD = VR = VDRM = VRRM, Tj = 125 °C 2
RMS on-state current (full sine wave) IT(RMS) 4 A Tc = 107 °C 2
Non repetitive surge peak on-state current ITSM 16 A t = 16.7 ms, Tj initial = 25 °C 2
Non repetitive surge peak on-state current ITSM 15 A t = 20 ms, Tj initial = 25 °C 2
I2t value for fusing I2t 1.5 A2s tp = 10 ms 2
Critical rate of rise of on-state current dl/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns, f = 120 Hz, Tj = 125 °C 2
Repetitive peak off-state voltage VDRM/VRRM 600 V Tj = 125 °C 2
Non repetitive peak off-state voltage VDSM/VRSM 750 V 10 ms 2
Maximum peak gate current IGM 1.2 A tp = 20 µs, Tj = 125 °C 2
Maximum gate power dissipation PGM 0.5 W 2
Storage temperature range Tstg -40 125 °C 2
Operating junction temperature range Tj -40 125 °C 2
Maximum lead temperature for soldering TL 260 °C during 10 s 2
Thermal resistance junction to case (AC) Rth(j-c) 3 °C/W AC 3
Thermal resistance junction to ambient Rth(j-a) 70 °C/W SCU = 0.5 cm² 3

CAD (KiCad official)

  • Symbol: Z0409MB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: z0409mb-etched.step / z0409mb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); z0409mb.step / z0409mb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (11 pp, sha256 7de39d7020a24040, retrieved 2026-09-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF