component
Z0409MB
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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z0409mb: specified limits as data (metadata.characteristics, 27 rows from the datasheet)
2 files changed
+365
README.md+34@@ -21,6 +21,40 @@ Z0409MB from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracte | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate trigger current | IGT(1) | | | 10 | mA | VD = 12 V, RL = 33 Ω | 2 |+| Gate trigger voltage | VGT | | | 1.3 | V | VD = 12 V, RL = 33 Ω | 2 |+| Gate non-trigger voltage | VGD | 0.2 | | | V | VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C | 2 |+| Latching current, quadrants I-III-IV | IL | | | 15 | mA | IG = 1.2 x IGT, I-III-IV | 2 |+| Latching current, quadrant II | IL | | | 25 | mA | IG = 1.2 x IGT, II | 2 |+| Holding current | IH(2) | | | 10 | mA | IT = 500 mA, gate open | 2 |+| Critical rate of rise of off-state voltage | dV/dt(2) | 100 | | | V/µs | VD = 67 % VDRM; VR = 67 % VRRM, gate open, Tj = 110 °C | 2 |+| Critical rate of decrease of main current (commutation) | (dV/dt)c(2) | 2 | | | V/µs | (dI/dt)c = 1.8 A/ms, Tj = 110 °C | 2 |+| On-state voltage | VTM(1) | | | 2 | V | ITM = 5.5 A, tp = 380 µs, Tj = 25 °C | 2 |+| Threshold voltage | VTO(1) | | | 0.95 | V | Tj = 125 °C | 2 |+| Dynamic resistance | RD(1) | | | 180 | mΩ | Tj = 125 °C | 2 |+| Repetitive peak off-state current | IDRM/IRRM | | | 5 | µA | VD = VR = VDRM = VRRM, Tj = 25 °C | 2 |+| Repetitive peak off-state current | IDRM/IRRM | | | 0.5 | mA | VD = VR = VDRM = VRRM, Tj = 125 °C | 2 |+| RMS on-state current (full sine wave) | IT(RMS) | | | 4 | A | Tc = 107 °C | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 16 | A | t = 16.7 ms, Tj initial = 25 °C | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 15 | A | t = 20 ms, Tj initial = 25 °C | 2 |+| I2t value for fusing | I2t | | | 1.5 | A2s | tp = 10 ms | 2 |+| Critical rate of rise of on-state current | dl/dt | | | 50 | A/µs | IG = 2 x IGT, tr ≤ 100 ns, f = 120 Hz, Tj = 125 °C | 2 |+| Repetitive peak off-state voltage | VDRM/VRRM | | | 600 | V | Tj = 125 °C | 2 |+| Non repetitive peak off-state voltage | VDSM/VRSM | | | 750 | V | 10 ms | 2 |+| Maximum peak gate current | IGM | | | 1.2 | A | tp = 20 µs, Tj = 125 °C | 2 |+| Maximum gate power dissipation | PGM | | | 0.5 | W | | 2 |+| Storage temperature range | Tstg | -40 | | 125 | °C | | 2 |+| Operating junction temperature range | Tj | -40 | | 125 | °C | | 2 |+| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10 s | 2 |+| Thermal resistance junction to case (AC) | Rth(j-c) | | | 3 | °C/W | AC | 3 |+| Thermal resistance junction to ambient | Rth(j-a) | | 70 | | °C/W | SCU = 0.5 cm² | 3 |+ ## CAD (KiCad official) - Symbol: `Z0409MB`
page.json+331@@ -135,6 +135,337 @@ "Package": "DPAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "7de39d7020a24040",+ "rows": [+ {+ "name": "Gate trigger current",+ "symbol": "IGT(1)",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VD = 12 V, RL = 33 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger voltage",+ "symbol": "VGT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "VD = 12 V, RL = 33 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate non-trigger voltage",+ "symbol": "VGD",+ "kind": "electrical",+ "unit": "V",+ "min": 0.2,+ "typ": null,+ "max": null,+ "conditions": "VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current, quadrants I-III-IV",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "IG = 1.2 x IGT, I-III-IV",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current, quadrant II",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "IG = 1.2 x IGT, II",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Holding current",+ "symbol": "IH(2)",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "IT = 500 mA, gate open",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of off-state voltage",+ "symbol": "dV/dt(2)",+ "kind": "electrical",+ "unit": "V/µs",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VD = 67 % VDRM; VR = 67 % VRRM, gate open, Tj = 110 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of decrease of main current (commutation)",+ "symbol": "(dV/dt)c(2)",+ "kind": "electrical",+ "unit": "V/µs",+ "min": 2,+ "typ": null,+ "max": null,+ "conditions": "(dI/dt)c = 1.8 A/ms, Tj = 110 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-state voltage",+ "symbol": "VTM(1)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "ITM = 5.5 A, tp = 380 µs, Tj = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Threshold voltage",+ "symbol": "VTO(1)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.95,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Dynamic resistance",+ "symbol": "RD(1)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 180,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state current",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VD = VR = VDRM = VRRM, Tj = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state current",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "VD = VR = VDRM = VRRM, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "RMS on-state current (full sine wave)",+ "symbol": "IT(RMS)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "Tc = 107 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "t = 16.7 ms, Tj initial = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "t = 20 ms, Tj initial = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "I2t value for fusing",+ "symbol": "I2t",+ "kind": "absolute_maximum",+ "unit": "A2s",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "tp = 10 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of on-state current",+ "symbol": "dl/dt",+ "kind": "absolute_maximum",+ "unit": "A/µs",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IG = 2 x IGT, tr ≤ 100 ns, f = 120 Hz, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state voltage",+ "symbol": "VDRM/VRRM",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 600,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive peak off-state voltage",+ "symbol": "VDSM/VRSM",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 750,+ "conditions": "10 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum peak gate current",+ "symbol": "IGM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "tp = 20 µs, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum gate power dissipation",+ "symbol": "PGM",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum lead temperature for soldering",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "during 10 s",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to case (AC)",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "AC",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 70,+ "max": null,+ "conditions": "SCU = 0.5 cm²",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],