# YJS8205B

**Yangzhou Yangjie Elec Tech** · MOSFETs · SOT-23-6L

YJS8205B from Yangzhou Yangjie Elec Tech, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 20V, ID 7.0A). |
| 2 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2, internally tied to pin 5. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 20V, ID 7.0A). |
| 4 | G2 | input | Gate of MOSFET 2, with VGS limited to ±10V and a threshold of 0.45 to 1.0V. |
| 5 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2, internally tied to pin 2. |
| 6 | G1 | input | Gate of MOSFET 1, with VGS limited to ±10V and a threshold of 0.45 to 1.0V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-source voltage | VGS | -10 |  | 10 | V |  | 1 |
| Drain current | ID |  |  | 7 | A | TA=25℃ @ Steady State | 1 |
| Drain current | ID |  |  | 5.6 | A | TA=70℃ @ Steady State | 1 |
| Pulsed drain current | IDM |  |  | 30 | A | Pulse test per footnote A: pulse width ≤300us, duty cycle ≤2% | 1 |
| Total power dissipation | PD |  |  | 1.5 | W | TA=25℃ | 1 |
| Thermal resistance junction-to-ambient | RθJA |  |  | 83 | ℃/ W | @ Steady State, device mounted on FR-4 PCB 1 inch x 0.85 inch x 0.062 inch (footnote B) | 1 |
| Junction and storage temperature range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | VGS= 0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=20V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS= ±10V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.62 | 1 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 13 | 18 | mΩ | VGS= 4.5V, ID=5.0A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 17 | 22 | mΩ | VGS= 2.5V, ID=3.0A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 21 | 39 | mΩ | VGS= 1.8V, ID=1.5A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | IS=7.0A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 7 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `YJS8205B`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `yjs8205b-etched.step` / `yjs8205b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yjs8205b.step` / `yjs8205b.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588949980891787264) (6 pp, sha256 `cb6f927f3659af31`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/yjs8205b-datasheet.pdf)