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YJS8205B

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Yangzhou Yangjie Elec Tech MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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YJS8205B

Yangzhou Yangjie Elec Tech · MOSFETs · SOT-23-6L

YJS8205B from Yangzhou Yangjie Elec Tech, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, VDS 20V, ID 7.0A).
2 D1/D2 passive Common drain of MOSFET 1 and MOSFET 2, internally tied to pin 5.
3 S2 passive Source of MOSFET 2 (N-channel, VDS 20V, ID 7.0A).
4 G2 input Gate of MOSFET 2, with VGS limited to ±10V and a threshold of 0.45 to 1.0V.
5 D1/D2 passive Common drain of MOSFET 1 and MOSFET 2, internally tied to pin 2.
6 G1 input Gate of MOSFET 1, with VGS limited to ±10V and a threshold of 0.45 to 1.0V.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 20 V 1
Gate-source voltage VGS -10 10 V 1
Drain current ID 7 A TA=25℃ @ Steady State 1
Drain current ID 5.6 A TA=70℃ @ Steady State 1
Pulsed drain current IDM 30 A Pulse test per footnote A: pulse width ≤300us, duty cycle ≤2% 1
Total power dissipation PD 1.5 W TA=25℃ 1
Thermal resistance junction-to-ambient RθJA 83 ℃/ W @ Steady State, device mounted on FR-4 PCB 1 inch x 0.85 inch x 0.062 inch (footnote B) 1
Junction and storage temperature range TJ, TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS= 0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS= ±10V, VDS=0V 2
Gate Threshold Voltage VGS(th) 0.45 0.62 1 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 13 18 mΩ VGS= 4.5V, ID=5.0A 2
Static Drain-Source On-Resistance RDS(ON) 17 22 mΩ VGS= 2.5V, ID=3.0A 2
Static Drain-Source On-Resistance RDS(ON) 21 39 mΩ VGS= 1.8V, ID=1.5A 2
Diode Forward Voltage VSD 1.2 V IS=7.0A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 7 A 2

CAD (KiCad official)

  • Symbol: YJS8205B
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: yjs8205b-etched.step / yjs8205b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yjs8205b.step / yjs8205b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256 cb6f927f3659af31, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF