main
Ray Set visibility: public aefaf1e 9h ago
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{
  "schema_version": 1,
  "type": "component",
  "slug": "yjj3439ka",
  "title": "YJJ3439KA",
  "brief": "Yangzhou Yangjie Elec Tech MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "transistors-thyristors",
    "yjj3439ka",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "YJJ3439KA",
    "manufacturer": "Yangzhou Yangjie Elec Tech",
    "package": "SOT-23-6L",
    "pin_count": 6,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603581359646384128",
    "parts": {
      "symbol": "yjj3439ka.kicad_sym",
      "footprint": "yjj3439ka.kicad_mod",
      "model_3d": "yjj3439ka-hero.glb",
      "model_3d_plain": "yjj3439ka-etched.glb",
      "model_3d_step": "yjj3439ka-etched.step",
      "model_3d_step_plain": "yjj3439ka.step",
      "lbr": "yjj3439ka.lbr"
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    "distributor_links": {
      "lcsc": "C2942419"
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    "distributor_check": {
      "checked_at": "2026-10-18T14:22:33Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
      },
      "mouser": {
        "pn": null,
        "status": "quota"
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    },
    "pins": [
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        "name": "G1",
        "type": "input",
        "description": "Gate of the N-channel MOSFET (Die1), rated VGS ±12V with ESD protection up to 2.0KV (HBM)."
      },
      {
        "number": "2",
        "name": "S2",
        "type": "passive",
        "description": "Source of the P-channel MOSFET (Die2), rated VDS -20V and ID -0.5A."
      },
      {
        "number": "3",
        "name": "G2",
        "type": "input",
        "description": "Gate of the P-channel MOSFET (Die2), rated VGS ±12V with ESD protection up to 2.0KV (HBM)."
      },
      {
        "number": "4",
        "name": "D2",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET (Die2), rated VDS -20V and ID -0.5A."
      },
      {
        "number": "5",
        "name": "S1",
        "type": "passive",
        "description": "Source of the N-channel MOSFET (Die1), rated VDS 20V and ID 0.5A."
      },
      {
        "number": "6",
        "name": "D1",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET (Die1), rated VDS 20V and ID 0.5A."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
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        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Pin assignment was read from the pin diagram and schematic on page 1. The page 8 package drawing has",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 9,
        "cost_usd": 0.27,
        "at": "2026-10-18T14:20:30"
      },
      "datasheet": {
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        "pages": 9,
        "sha256": "182885ba8acddcd1",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 6,
        "described": 6,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
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        "sha256": "c9fe686b4d1b56927a41fa84a9bc1efb61d8a45a123a3db43bcaa05c2891d635",
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      "Package": "SOT-23-6L",
      "Category": "Transistors/Thyristors",
      "Pins": "6"
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          "name": "N-MOS Drain Current (absolute maximum)",
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          "conditions": "TC=70℃",
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        {
          "name": "N-MOS Pulsed Drain Current (absolute maximum)",
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        {
          "name": "P-MOS Pulsed Drain Current (absolute maximum)",
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        {
          "name": "Total Power Dissipation (absolute maximum, N and P columns)",
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          "unit": "W",
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          "typ": null,
          "max": 0.3,
          "conditions": "TC=25℃",
          "source_page": 1,
          "source": "datasheet"
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        {
          "name": "Junction and Storage Temperature Range",
          "symbol": "TJ,TSTG",
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          "kind": "electrical",
          "unit": "μA",
          "min": null,
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          "max": 1,
          "conditions": "VDS=20V,VGS=0V",
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        {
          "name": "N-MOS Gate-Body Leakage Current",
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          "kind": "electrical",
          "unit": "μA",
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        {
          "name": "N-MOS Static Drain-Source On-Resistance",
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          "kind": "electrical",
          "unit": "mΩ",
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          "typ": 180,
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          "unit": "mΩ",
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          "kind": "electrical",
          "unit": "mΩ",
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          "typ": 420,
          "max": 650,
          "conditions": "VGS= 1.8V, ID=0.2A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "N-MOS Maximum Body-Diode Continuous Current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
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          "unit": "V",
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          "typ": null,
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          "conditions": "VGS= 0V, ID=-250μA",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "P-MOS Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": -1,
          "conditions": "VDS=-20V,VGS=0V,TC=25℃",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "P-MOS Gate-Body Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": 1.5,
          "max": 10,
          "conditions": "VGS= ±10V, VDS=0V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "P-MOS Gate-Body Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": 500,
          "max": 2000,
          "conditions": "VGS= ±8V, VDS=0V",
          "source_page": 3,
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        },
        {
          "name": "P-MOS Gate Threshold Voltage",
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          "kind": "electrical",
          "unit": "V",
          "min": -0.35,
          "typ": -0.62,
          "max": -1.2,
          "conditions": "VDS= VGS, ID=-250μA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "P-MOS Static Drain-Source On-Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 610,
          "max": 850,
          "conditions": "VGS= -4.5V, ID=-0.5A",
          "source_page": 3,
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        },
        {
          "name": "P-MOS Static Drain-Source On-Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 930,
          "max": 1200,
          "conditions": "VGS= -2.5V, ID=-0.3A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "P-MOS Static Drain-Source On-Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 1100,
          "max": 1700,
          "conditions": "VGS= -1.8V, ID=-0.2A",
          "source_page": 3,
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        },
        {
          "name": "P-MOS Maximum Body-Diode Continuous Current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": -0.5,
          "conditions": "",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance Junction-to-Ambient (steady state, N and P columns)",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": 416,
          "max": null,
          "conditions": "Steady state, device mounted on FR-4 PCB",
          "source_page": 1,
          "source": "datasheet"
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      ]
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  },
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  "discovery_pitch": "YJJ3439KA (Yangzhou Yangjie Elec Tech) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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