component
YJJ3439KA
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Yangzhou Yangjie Elec Tech MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownYJJ3439KA
Yangzhou Yangjie Elec Tech · MOSFETs · SOT-23-6L
YJJ3439KA from Yangzhou Yangjie Elec Tech, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (Die1), rated VGS ±12V with ESD protection up to 2.0KV (HBM). |
| 2 | S2 | passive | Source of the P-channel MOSFET (Die2), rated VDS -20V and ID -0.5A. |
| 3 | G2 | input | Gate of the P-channel MOSFET (Die2), rated VGS ±12V with ESD protection up to 2.0KV (HBM). |
| 4 | D2 | passive | Drain of the P-channel MOSFET (Die2), rated VDS -20V and ID -0.5A. |
| 5 | S1 | passive | Source of the N-channel MOSFET (Die1), rated VDS 20V and ID 0.5A. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (Die1), rated VDS 20V and ID 0.5A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-MOS Drain-Source Voltage (absolute maximum) | VDS | 20 | V | TA=25℃ unless otherwise noted | 1 | ||
| P-MOS Drain-Source Voltage (absolute maximum) | VDS | -20 | V | TA=25℃ unless otherwise noted | 1 | ||
| N-MOS Gate-Source Voltage (absolute maximum) | VGS | -12 | 12 | V | TA=25℃ unless otherwise noted | 1 | |
| P-MOS Gate-Source Voltage (absolute maximum) | VGS | -12 | 12 | V | TA=25℃ unless otherwise noted | 1 | |
| N-MOS Drain Current (absolute maximum) | ID | 0.5 | A | TC=25℃ | 1 | ||
| P-MOS Drain Current (absolute maximum) | ID | -0.5 | A | TC=25℃ | 1 | ||
| N-MOS Drain Current (absolute maximum) | ID | 0.4 | A | TC=70℃ | 1 | ||
| P-MOS Drain Current (absolute maximum) | ID | -0.4 | A | TC=70℃ | 1 | ||
| N-MOS Pulsed Drain Current (absolute maximum) | IDM | 2.3 | A | 1 | |||
| P-MOS Pulsed Drain Current (absolute maximum) | IDM | -2.3 | A | 1 | |||
| Total Power Dissipation (absolute maximum, N and P columns) | PD | 0.3 | W | TC=25℃ | 1 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| N-MOS Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS= 0V, ID=250μA | 2 | ||
| N-MOS Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| N-MOS Gate-Body Leakage Current | IGSS | 1.5 | 10 | μA | VGS= ±10V, VDS=0V | 2 | |
| N-MOS Gate-Body Leakage Current | IGSS | 500 | 2000 | nA | VGS= ±8V, VDS=0V | 2 | |
| N-MOS Gate Threshold Voltage | VGS(th) | 0.35 | 0.75 | 1.1 | V | VDS= VGS, ID=250μA | 2 |
| N-MOS Static Drain-Source On-Resistance | RDS(ON) | 180 | 280 | mΩ | VGS= 4.5V, ID=0.5A | 2 | |
| N-MOS Static Drain-Source On-Resistance | RDS(ON) | 250 | 400 | mΩ | VGS= 2.5V, ID=0.3A | 2 | |
| N-MOS Static Drain-Source On-Resistance | RDS(ON) | 420 | 650 | mΩ | VGS= 1.8V, ID=0.2A | 2 | |
| N-MOS Maximum Body-Diode Continuous Current | IS | 0.5 | A | 2 | |||
| P-MOS Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS= 0V, ID=-250μA | 3 | ||
| P-MOS Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-20V,VGS=0V,TC=25℃ | 3 | ||
| P-MOS Gate-Body Leakage Current | IGSS | 1.5 | 10 | μA | VGS= ±10V, VDS=0V | 3 | |
| P-MOS Gate-Body Leakage Current | IGSS | 500 | 2000 | nA | VGS= ±8V, VDS=0V | 3 | |
| P-MOS Gate Threshold Voltage | VGS(th) | -0.35 | -0.62 | -1.2 | V | VDS= VGS, ID=-250μA | 3 |
| P-MOS Static Drain-Source On-Resistance | RDS(ON) | 610 | 850 | mΩ | VGS= -4.5V, ID=-0.5A | 3 | |
| P-MOS Static Drain-Source On-Resistance | RDS(ON) | 930 | 1200 | mΩ | VGS= -2.5V, ID=-0.3A | 3 | |
| P-MOS Static Drain-Source On-Resistance | RDS(ON) | 1100 | 1700 | mΩ | VGS= -1.8V, ID=-0.2A | 3 | |
| P-MOS Maximum Body-Diode Continuous Current | IS | -0.5 | A | 3 | |||
| Thermal Resistance Junction-to-Ambient (steady state, N and P columns) | RθJA | 416 | ℃/W | Steady state, device mounted on FR-4 PCB | 1 |
CAD (KiCad official)
- Symbol:
YJJ3439KA - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
yjj3439ka-etched.step/yjj3439ka-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjj3439ka.step/yjj3439ka.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (9 pp, sha256
182885ba8acddcd1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).