# YJJ3439KA

**Yangzhou Yangjie Elec Tech** · MOSFETs · SOT-23-6L

YJJ3439KA from Yangzhou Yangjie Elec Tech, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (Die1), rated VGS ±12V with ESD protection up to 2.0KV (HBM). |
| 2 | S2 | passive | Source of the P-channel MOSFET (Die2), rated VDS -20V and ID -0.5A. |
| 3 | G2 | input | Gate of the P-channel MOSFET (Die2), rated VGS ±12V with ESD protection up to 2.0KV (HBM). |
| 4 | D2 | passive | Drain of the P-channel MOSFET (Die2), rated VDS -20V and ID -0.5A. |
| 5 | S1 | passive | Source of the N-channel MOSFET (Die1), rated VDS 20V and ID 0.5A. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (Die1), rated VDS 20V and ID 0.5A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-MOS Drain-Source Voltage (absolute maximum) | VDS |  |  | 20 | V | TA=25℃ unless otherwise noted | 1 |
| P-MOS Drain-Source Voltage (absolute maximum) | VDS |  |  | -20 | V | TA=25℃ unless otherwise noted | 1 |
| N-MOS Gate-Source Voltage (absolute maximum) | VGS | -12 |  | 12 | V | TA=25℃ unless otherwise noted | 1 |
| P-MOS Gate-Source Voltage (absolute maximum) | VGS | -12 |  | 12 | V | TA=25℃ unless otherwise noted | 1 |
| N-MOS Drain Current (absolute maximum) | ID |  |  | 0.5 | A | TC=25℃ | 1 |
| P-MOS Drain Current (absolute maximum) | ID |  |  | -0.5 | A | TC=25℃ | 1 |
| N-MOS Drain Current (absolute maximum) | ID |  |  | 0.4 | A | TC=70℃ | 1 |
| P-MOS Drain Current (absolute maximum) | ID |  |  | -0.4 | A | TC=70℃ | 1 |
| N-MOS Pulsed Drain Current (absolute maximum) | IDM |  |  | 2.3 | A |  | 1 |
| P-MOS Pulsed Drain Current (absolute maximum) | IDM |  |  | -2.3 | A |  | 1 |
| Total Power Dissipation (absolute maximum, N and P columns) | PD |  |  | 0.3 | W | TC=25℃ | 1 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| N-MOS Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | VGS= 0V, ID=250μA | 2 |
| N-MOS Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=20V,VGS=0V | 2 |
| N-MOS Gate-Body Leakage Current | IGSS |  | 1.5 | 10 | μA | VGS= ±10V, VDS=0V | 2 |
| N-MOS Gate-Body Leakage Current | IGSS |  | 500 | 2000 | nA | VGS= ±8V, VDS=0V | 2 |
| N-MOS Gate Threshold Voltage | VGS(th) | 0.35 | 0.75 | 1.1 | V | VDS= VGS, ID=250μA | 2 |
| N-MOS Static Drain-Source On-Resistance | RDS(ON) |  | 180 | 280 | mΩ | VGS= 4.5V, ID=0.5A | 2 |
| N-MOS Static Drain-Source On-Resistance | RDS(ON) |  | 250 | 400 | mΩ | VGS= 2.5V, ID=0.3A | 2 |
| N-MOS Static Drain-Source On-Resistance | RDS(ON) |  | 420 | 650 | mΩ | VGS= 1.8V, ID=0.2A | 2 |
| N-MOS Maximum Body-Diode Continuous Current | IS |  |  | 0.5 | A |  | 2 |
| P-MOS Drain-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS= 0V, ID=-250μA | 3 |
| P-MOS Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-20V,VGS=0V,TC=25℃ | 3 |
| P-MOS Gate-Body Leakage Current | IGSS |  | 1.5 | 10 | μA | VGS= ±10V, VDS=0V | 3 |
| P-MOS Gate-Body Leakage Current | IGSS |  | 500 | 2000 | nA | VGS= ±8V, VDS=0V | 3 |
| P-MOS Gate Threshold Voltage | VGS(th) | -0.35 | -0.62 | -1.2 | V | VDS= VGS, ID=-250μA | 3 |
| P-MOS Static Drain-Source On-Resistance | RDS(ON) |  | 610 | 850 | mΩ | VGS= -4.5V, ID=-0.5A | 3 |
| P-MOS Static Drain-Source On-Resistance | RDS(ON) |  | 930 | 1200 | mΩ | VGS= -2.5V, ID=-0.3A | 3 |
| P-MOS Static Drain-Source On-Resistance | RDS(ON) |  | 1100 | 1700 | mΩ | VGS= -1.8V, ID=-0.2A | 3 |
| P-MOS Maximum Body-Diode Continuous Current | IS |  |  | -0.5 | A |  | 3 |
| Thermal Resistance Junction-to-Ambient (steady state, N and P columns) | RθJA |  | 416 |  | ℃/W | Steady state, device mounted on FR-4 PCB | 1 |

## CAD (KiCad official)

- Symbol: `YJJ3439KA`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `yjj3439ka-etched.step` / `yjj3439ka-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yjj3439ka.step` / `yjj3439ka.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603581359646384128) (9 pp, sha256 `182885ba8acddcd1`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/yjj3439ka-datasheet.pdf)