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YJD90N06A
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Yangzhou Yangjie Elec Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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YJD90N06A
Yangzhou Yangjie Elec Tech · MOSFETs · TO-252
YJD90N06A from Yangzhou Yangjie Elec Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with a threshold of 1.0 V min, 1.5 V typ, 2.5 V max at ID=250 µA. |
| 2 | D | passive | Drain, connected to the middle lead stub and the exposed heat-dissipation tab; drain-source voltage is rated 60 V and continuous current 90 A at TC=25℃. |
| 3 | S | passive | Source; body-diode continuous current is rated 90 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | 60 | V | 1 | |||
| Gate-source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current | ID | 90 | A | TC=25℃ | 1 | ||
| Drain Current | ID | 57 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 300 | A | 1 | |||
| Total Power Dissipation | PD | 110 | W | @ TC=25℃ | 1 | ||
| Total Power Dissipation | PD | 44 | W | @ TC=100℃ | 1 | ||
| Total Power Dissipation | PD | 6.2 | W | @ TA=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 196 | mJ | Note D: Tj=25℃, VDD=55V, VG=10V, L=0.5mH | 1 | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-to-Case | RθJC | 1.14 | ℃/ W | 1 | |||
| Thermal Resistance Junction-to-Ambient | RθJA | 20 | ℃/ W | Device mounted on 1in2 FR-4 board with 2oz. Copper, still air, TA=25℃ (Note C) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 5.6 | 7.2 | mΩ | VGS=10V, ID=15A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 6.8 | 8.5 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | IS=15A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 90 | A | 2 | |||
| Gate resistance | Rg | 2.1 | Ω | f=1 MHz, open drain | 2 | ||
| Input Capacitance | Ciss | 5170 | pF | VDS=30V, VGS=0V, f=1MHZ | 2 | ||
| Output Capacitance | Coss | 300 | pF | VDS=30V, VGS=0V, f=1MHZ | 2 | ||
| Reverse Transfer Capacitance | Crss | 155 | pF | VDS=30V, VGS=0V, f=1MHZ | 2 | ||
| Total Gate Charge | Qg(10V) | 102 | nC | VGS=10V, VDS=30V, ID=20A | 2 | ||
| Total Gate Charge | Qg(4.5V) | 48 | nC | VGS=10V, VDS=30V, ID=20A | 2 | ||
| Gate-Source Charge | Qgs | 18.7 | nC | VGS=10V, VDS=30V, ID=20A | 2 | ||
| Gate-Drain Charge | Qgd | 20 | nC | VGS=10V, VDS=30V, ID=20A | 2 | ||
| Reverse Recovery Charge | Qrr | 18 | nC | IF=20A, di/dt=100A/us | 2 | ||
| Reverse Recovery Time | trr | 27 | ns | IF=20A, di/dt=100A/us | 2 | ||
| Turn-on Delay Time | tD(on) | 12 | ns | VGS=10V, VDD=30V, ID=20A, RGEN=3Ω | 2 | ||
| Turn-on Rise Time | tr | 46 | ns | VGS=10V, VDD=30V, ID=20A, RGEN=3Ω | 2 | ||
| Turn-off Delay Time | tD(off) | 90 | ns | VGS=10V, VDD=30V, ID=20A, RGEN=3Ω | 2 | ||
| Turn-off fall Time | tf | 80 | ns | VGS=10V, VDD=30V, ID=20A, RGEN=3Ω | 2 |
CAD (KiCad official)
- Symbol:
YJD90N06A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
yjd90n06a-etched.step/yjd90n06a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjd90n06a.step/yjd90n06a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256
f3c2808dc41ccde7, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# YJD90N06A
**Yangzhou Yangjie Elec Tech** · MOSFETs · TO-252
YJD90N06A from Yangzhou Yangjie Elec Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with a threshold of 1.0 V min, 1.5 V typ, 2.5 V max at ID=250 µA. |
| 2 | D | passive | Drain, connected to the middle lead stub and the exposed heat-dissipation tab; drain-source voltage is rated 60 V and continuous current 90 A at TC=25℃. |
| 3 | S | passive | Source; body-diode continuous current is rated 90 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | | | 60 | V | | 1 |
| Gate-source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current | ID | | | 90 | A | TC=25℃ | 1 |
| Drain Current | ID | | | 57 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 300 | A | | 1 |
| Total Power Dissipation | PD | | | 110 | W | @ TC=25℃ | 1 |
| Total Power Dissipation | PD | | | 44 | W | @ TC=100℃ | 1 |
| Total Power Dissipation | PD | | | 6.2 | W | @ TA=25℃ | 1 |
| Single Pulse Avalanche Energy | EAS | | | 196 | mJ | Note D: Tj=25℃, VDD=55V, VG=10V, L=0.5mH | 1 |
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-to-Case | RθJC | | | 1.14 | ℃/ W | | 1 |
| Thermal Resistance Junction-to-Ambient | RθJA | | | 20 | ℃/ W | Device mounted on 1in2 FR-4 board with 2oz. Copper, still air, TA=25℃ (Note C) | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=60V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 5.6 | 7.2 | mΩ | VGS=10V, ID=15A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 6.8 | 8.5 | mΩ | VGS=4.5V, ID=10A | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | IS=15A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 90 | A | | 2 |
| Gate resistance | Rg | | 2.1 | | Ω | f=1 MHz, open drain | 2 |
| Input Capacitance | Ciss | | 5170 | | pF | VDS=30V, VGS=0V, f=1MHZ | 2 |
| Output Capacitance | Coss | | 300 | | pF | VDS=30V, VGS=0V, f=1MHZ | 2 |
| Reverse Transfer Capacitance | Crss | | 155 | | pF | VDS=30V, VGS=0V, f=1MHZ | 2 |
| Total Gate Charge | Qg(10V) | | 102 | | nC | VGS=10V, VDS=30V, ID=20A | 2 |
| Total Gate Charge | Qg(4.5V) | | 48 | | nC | VGS=10V, VDS=30V, ID=20A | 2 |
| Gate-Source Charge | Qgs | | 18.7 | | nC | VGS=10V, VDS=30V, ID=20A | 2 |
| Gate-Drain Charge | Qgd | | 20 | | nC | VGS=10V, VDS=30V, ID=20A | 2 |
| Reverse Recovery Charge | Qrr | | 18 | | nC | IF=20A, di/dt=100A/us | 2 |
| Reverse Recovery Time | trr | | 27 | | ns | IF=20A, di/dt=100A/us | 2 |
| Turn-on Delay Time | tD(on) | | 12 | | ns | VGS=10V, VDD=30V, ID=20A, RGEN=3Ω | 2 |
| Turn-on Rise Time | tr | | 46 | | ns | VGS=10V, VDD=30V, ID=20A, RGEN=3Ω | 2 |
| Turn-off Delay Time | tD(off) | | 90 | | ns | VGS=10V, VDD=30V, ID=20A, RGEN=3Ω | 2 |
| Turn-off fall Time | tf | | 80 | | ns | VGS=10V, VDD=30V, ID=20A, RGEN=3Ω | 2 |
## CAD (KiCad official)
- Symbol: `YJD90N06A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `yjd90n06a-etched.step` / `yjd90n06a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yjd90n06a.step` / `yjd90n06a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588916833444876288) (6 pp, sha256 `f3c2808dc41ccde7`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/yjd90n06a-datasheet.pdf)