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Contents

README

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YJD90N06A

Yangzhou Yangjie Elec Tech · MOSFETs · TO-252

YJD90N06A from Yangzhou Yangjie Elec Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with a threshold of 1.0 V min, 1.5 V typ, 2.5 V max at ID=250 µA.
2 D passive Drain, connected to the middle lead stub and the exposed heat-dissipation tab; drain-source voltage is rated 60 V and continuous current 90 A at TC=25℃.
3 S passive Source; body-diode continuous current is rated 90 A.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source Voltage VDS 60 V 1
Gate-source Voltage VGS -20 20 V 1
Drain Current ID 90 A TC=25℃ 1
Drain Current ID 57 A TC=100℃ 1
Pulsed Drain Current IDM 300 A 1
Total Power Dissipation PD 110 W @ TC=25℃ 1
Total Power Dissipation PD 44 W @ TC=100℃ 1
Total Power Dissipation PD 6.2 W @ TA=25℃ 1
Single Pulse Avalanche Energy EAS 196 mJ Note D: Tj=25℃, VDD=55V, VG=10V, L=0.5mH 1
Junction and Storage Temperature Range TJ ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-to-Case RθJC 1.14 ℃/ W 1
Thermal Resistance Junction-to-Ambient RθJA 20 ℃/ W Device mounted on 1in2 FR-4 board with 2oz. Copper, still air, TA=25℃ (Note C) 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 5.6 7.2 mΩ VGS=10V, ID=15A 2
Static Drain-Source On-Resistance RDS(ON) 6.8 8.5 mΩ VGS=4.5V, ID=10A 2
Diode Forward Voltage VSD 0.8 1.2 V IS=15A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 90 A 2
Gate resistance Rg 2.1 Ω f=1 MHz, open drain 2
Input Capacitance Ciss 5170 pF VDS=30V, VGS=0V, f=1MHZ 2
Output Capacitance Coss 300 pF VDS=30V, VGS=0V, f=1MHZ 2
Reverse Transfer Capacitance Crss 155 pF VDS=30V, VGS=0V, f=1MHZ 2
Total Gate Charge Qg(10V) 102 nC VGS=10V, VDS=30V, ID=20A 2
Total Gate Charge Qg(4.5V) 48 nC VGS=10V, VDS=30V, ID=20A 2
Gate-Source Charge Qgs 18.7 nC VGS=10V, VDS=30V, ID=20A 2
Gate-Drain Charge Qgd 20 nC VGS=10V, VDS=30V, ID=20A 2
Reverse Recovery Charge Qrr 18 nC IF=20A, di/dt=100A/us 2
Reverse Recovery Time trr 27 ns IF=20A, di/dt=100A/us 2
Turn-on Delay Time tD(on) 12 ns VGS=10V, VDD=30V, ID=20A, RGEN=3Ω 2
Turn-on Rise Time tr 46 ns VGS=10V, VDD=30V, ID=20A, RGEN=3Ω 2
Turn-off Delay Time tD(off) 90 ns VGS=10V, VDD=30V, ID=20A, RGEN=3Ω 2
Turn-off fall Time tf 80 ns VGS=10V, VDD=30V, ID=20A, RGEN=3Ω 2

CAD (KiCad official)

  • Symbol: YJD90N06A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: yjd90n06a-etched.step / yjd90n06a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yjd90n06a.step / yjd90n06a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256 f3c2808dc41ccde7, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF