# YJD106510DQG2

**Yangzhou Yangjie Elec Tech** · SiC Diodes · TO-252

YJD106510DQG2 from Yangzhou Yangjie Elec Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Anode of the 650 V SiC Schottky diode, shown as PIN1 on the internal schematic on page 1. |
| 2 | K | passive | Cathode, connected to the mounting tab (Pin 2 in the package picture), with VRRM 650 V and 14 A continuous forward current at Tc=135°C. |
| 3 | K | passive | Cathode, wired directly to PIN2 in the internal schematic on page 1, so it is electrically the same node as pin 2 and the tab. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | TO-252 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage drop | VF |  | 1.35 | 1.55 | V | IF=10A, Tj=25°C | 2 |
| Reverse leakage current | IR |  | 0.5 | 25 | μA | VR=650V, Tj=25°C | 2 |
| Reverse voltage (repetitive peak) | VRRM |  |  | 650 | V | @ Tj=25°C | 1 |
| Reverse voltage (Surge Peak) | VRSM |  |  | 650 | V | @ Tj=25°C | 1 |
| Reverse voltage (DC) | VDC |  |  | 650 | V | @ Tj=25°C | 1 |
| Continuous forward current | IF |  |  | 30 | A | @ Tc=25°C | 1 |
| Continuous forward current | IF |  |  | 14 | A | @ Tc=135°C | 1 |
| Continuous forward current | IF |  |  | 10 | A | @ Tc=154°C | 1 |
| Non-repetitive peak forward surge current | IFSM |  |  | 80 | A | @ Tc=25°C, tp=10ms, Half Sine Wave | 1 |
| Power Dissipation | PTOT |  |  | 136 | W | @ Tc=25°C | 1 |
| Power Dissipation | PTOT |  |  | 59 | W | @ Tc=110°C | 1 |
| i2t Value | i2t |  |  | 32 | A2 S | @ Tc=25°C ,tp=10ms | 1 |
| Operating junction and Storage temperature range | Tj,Tstg | -55 |  | 175 | °C |  | 1 |
| Forward voltage drop | VF |  | 1.8 |  | V | IF=10A, Tj=175°C | 2 |
| Reverse leakage current | IR |  | 2 |  | μA | VR=650V, Tj=175°C | 2 |
| Total capacitive charge | QC |  | 30 |  | nC | VR=400V, Tj=25°C | 2 |
| Total capacitance | C |  | 543 |  | pF | VR=0V, f=1MHZ | 2 |
| Total capacitance | C |  | 55 |  | pF | VR=200V, f=1MHZ | 2 |
| Total capacitance | C |  | 52 |  | pF | VR=400V, f=1MHZ | 2 |
| Capacitance Stored Energy | EC |  | 3.7 |  | μJ | VR=400V | 2 |
| Thermal resistance | RθJ-C |  | 1.1 |  | °C /W |  | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts |  | tin | ● Terminals: Tin plated leads ● Polarity: As marked | 1 |

## CAD (KiCad official)

- Symbol: `YJD106510DQG2`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `yjd106510dqg2-etched.step` / `yjd106510dqg2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yjd106510dqg2.step` / `yjd106510dqg2.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603384030821822464) (5 pp, sha256 `6dbf38fd6c7b6bcc`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/yjd106510dqg2-datasheet.pdf)