component
YJD106510DQG2
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Yangzhou Yangjie Elec Tech SiC Diodes, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownYJD106510DQG2
Yangzhou Yangjie Elec Tech · SiC Diodes · TO-252
YJD106510DQG2 from Yangzhou Yangjie Elec Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Anode of the 650 V SiC Schottky diode, shown as PIN1 on the internal schematic on page 1. |
| 2 | K | passive | Cathode, connected to the mounting tab (Pin 2 in the package picture), with VRRM 650 V and 14 A continuous forward current at Tc=135°C. |
| 3 | K | passive | Cathode, wired directly to PIN2 in the internal schematic on page 1, so it is electrically the same node as pin 2 and the tab. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | TO-252 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage drop | VF | 1.35 | 1.55 | V | IF=10A, Tj=25°C | 2 | |
| Reverse leakage current | IR | 0.5 | 25 | μA | VR=650V, Tj=25°C | 2 | |
| Reverse voltage (repetitive peak) | VRRM | 650 | V | @ Tj=25°C | 1 | ||
| Reverse voltage (Surge Peak) | VRSM | 650 | V | @ Tj=25°C | 1 | ||
| Reverse voltage (DC) | VDC | 650 | V | @ Tj=25°C | 1 | ||
| Continuous forward current | IF | 30 | A | @ Tc=25°C | 1 | ||
| Continuous forward current | IF | 14 | A | @ Tc=135°C | 1 | ||
| Continuous forward current | IF | 10 | A | @ Tc=154°C | 1 | ||
| Non-repetitive peak forward surge current | IFSM | 80 | A | @ Tc=25°C, tp=10ms, Half Sine Wave | 1 | ||
| Power Dissipation | PTOT | 136 | W | @ Tc=25°C | 1 | ||
| Power Dissipation | PTOT | 59 | W | @ Tc=110°C | 1 | ||
| i2t Value | i2t | 32 | A2 S | @ Tc=25°C ,tp=10ms | 1 | ||
| Operating junction and Storage temperature range | Tj,Tstg | -55 | 175 | °C | 1 | ||
| Forward voltage drop | VF | 1.8 | V | IF=10A, Tj=175°C | 2 | ||
| Reverse leakage current | IR | 2 | μA | VR=650V, Tj=175°C | 2 | ||
| Total capacitive charge | QC | 30 | nC | VR=400V, Tj=25°C | 2 | ||
| Total capacitance | C | 543 | pF | VR=0V, f=1MHZ | 2 | ||
| Total capacitance | C | 55 | pF | VR=200V, f=1MHZ | 2 | ||
| Total capacitance | C | 52 | pF | VR=400V, f=1MHZ | 2 | ||
| Capacitance Stored Energy | EC | 3.7 | μJ | VR=400V | 2 | ||
| Thermal resistance | RθJ-C | 1.1 | °C /W | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | ● Terminals: Tin plated leads ● Polarity: As marked | 1 |
CAD (KiCad official)
- Symbol:
YJD106510DQG2 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
yjd106510dqg2-etched.step/yjd106510dqg2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjd106510dqg2.step/yjd106510dqg2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (5 pp, sha256
6dbf38fd6c7b6bcc, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).