component
YHJ-65H225DDC
Public Made by Adomby adom
NITRIDE GaN Transistors(GaN HEMT), DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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YHJ-65H225DDC
NITRIDE · GaN Transistors(GaN HEMT) · DFN-8(5x6)
YHJ-65H225DDC from NITRIDE, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal, 650 V drain-source rating, tied with pins 2-4. |
| 2 | D | passive | Drain terminal, 650 V drain-source rating, tied with pins 1, 3, 4. |
| 3 | D | passive | Drain terminal, 650 V drain-source rating, tied with pins 1, 2, 4. |
| 4 | D | passive | Drain terminal, 650 V drain-source rating, tied with pins 1-3. |
| 5 | S | passive | Source terminal, tied with pins 6-7 and the exposed source pad. |
| 6 | S | passive | Source terminal, tied with pins 5, 7, 8 and the exposed source pad. |
| 7 | S | passive | Source terminal, tied with pins 5, 6 and the exposed source pad. |
| 8 | G | input | Gate drive input, gate-source voltage range -10 V to +15 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NITRIDE |
| Package | DFN-8(5x6) |
| Category | Gallium Nitride (GaN) Devices |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | V(BL)DSS | 650 | V | VGS=0V | 4 | ||
| Gate threshold voltage | VGS(th) | 1.2 | 1.6 | 2 | V | VDS= 10V ,ID=1mA | 4 |
| Static drain-source on-resistance | RDS(on) | 215 | 250 | mΩ | VGS=10V, ID=5A, TJ =25°C | 4 | |
| Static drain-source on-resistance | RDS(on) | 475 | mΩ | VGS=10V, ID=5A, TJ =150°C | 4 | ||
| Drain-source leakage current | IDSS | 0.5 | 12 | A | VGS =0V, VDS =650V, TJ=25°C | 4 | |
| Drain-source leakage current | IDSS | 100 | A | VGS =0V, VDS =650V, TJ=150°C | 4 | ||
| Drain-source voltage | VDSS | 650 | V | 3 | |||
| Transient drain to source voltage | V(TR)DSS | 800 | V | In off-state, spike duty cycle D<0.01, spike duration <1us | 3 | ||
| Gate-source voltage | VGSS | -10 | 15 | V | 3 | ||
| Total power dissipation | Ptot | 63 | W | @TC = 25°C | 3 | ||
| Drain current (continuous) | ID | 8 | A | TC = 25°C operation | 3 | ||
| Drain current (continuous) | ID | 5 | A | TC = 100°C operation | 3 | ||
| Pulsed drain current | IDM | 13 | A | pulse width: 100us | 3 | ||
| Operating temperature | TJ | -55 | 150 | °C | 3 | ||
| Storage temperature | TS | -55 | 150 | °C | 3 | ||
| Soldering peak temperature | TSOLD | 260 | °C | For 10 sec., 1.6mm from the case | 3 | ||
| Thermal resistance junction-ambient | RΘJA | 42 | °C/W | 3 | |||
| Thermal resistance junction-case | RΘJC | 2.1 | °C/W | 3 | |||
| Input capacitance | CISS | 90 | pF | VGS=0V, VDS=400V, f=1MHz | 4 | ||
| Output capacitance | COSS | 50 | pF | VGS=0V, VDS=400V, f=1MHz | 4 | ||
| Reverse transfer capacitance | CRSS | 1 | pF | VGS=0V, VDS=400V, f=1MHz | 4 | ||
| Gate charge | QG | 1.6 | nC | VGS=0~10V, VDS =400V, IDS =10A | 4 | ||
| Gate-source charge | QGS | 0.5 | nC | VGS=0~10V, VDS =400V, IDS =10A | 4 | ||
| Output charge | QOSS | 14 | nC | VGS=0V, VDS=0~400V | 4 | ||
| Turn-on delay time | td(on) | 3.5 | ns | VDS=400V, VGS =0 to 12V, IDS=7A ,RG =25Ω | 4 | ||
| Turn-off delay time | td(off) | 7 | ns | VDS=400V, VGS =0 to 12V, IDS=7A ,RG =25Ω | 4 | ||
| Reverse recovery charge | QRR | 0 | nC | VGS =-10V, VDS =0V | 4 |
CAD (KiCad official)
- Symbol:
YHJ-65H225DDC - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
yhj-65h225ddc-etched.step/yhj-65h225ddc-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yhj-65h225ddc.step/yhj-65h225ddc.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: NITRIDE datasheet (12 pp, sha256
929e566348240077, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# YHJ-65H225DDC
**NITRIDE** · GaN Transistors(GaN HEMT) · DFN-8(5x6)
YHJ-65H225DDC from NITRIDE, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal, 650 V drain-source rating, tied with pins 2-4. |
| 2 | D | passive | Drain terminal, 650 V drain-source rating, tied with pins 1, 3, 4. |
| 3 | D | passive | Drain terminal, 650 V drain-source rating, tied with pins 1, 2, 4. |
| 4 | D | passive | Drain terminal, 650 V drain-source rating, tied with pins 1-3. |
| 5 | S | passive | Source terminal, tied with pins 6-7 and the exposed source pad. |
| 6 | S | passive | Source terminal, tied with pins 5, 7, 8 and the exposed source pad. |
| 7 | S | passive | Source terminal, tied with pins 5, 6 and the exposed source pad. |
| 8 | G | input | Gate drive input, gate-source voltage range -10 V to +15 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NITRIDE |
| Package | DFN-8(5x6) |
| Category | Gallium Nitride (GaN) Devices |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | V(BL)DSS | 650 | | | V | VGS=0V | 4 |
| Gate threshold voltage | VGS(th) | 1.2 | 1.6 | 2 | V | VDS= 10V ,ID=1mA | 4 |
| Static drain-source on-resistance | RDS(on) | | 215 | 250 | mΩ | VGS=10V, ID=5A, TJ =25°C | 4 |
| Static drain-source on-resistance | RDS(on) | | 475 | | mΩ | VGS=10V, ID=5A, TJ =150°C | 4 |
| Drain-source leakage current | IDSS | | 0.5 | 12 | A | VGS =0V, VDS =650V, TJ=25°C | 4 |
| Drain-source leakage current | IDSS | | 100 | | A | VGS =0V, VDS =650V, TJ=150°C | 4 |
| Drain-source voltage | VDSS | | | 650 | V | | 3 |
| Transient drain to source voltage | V(TR)DSS | | | 800 | V | In off-state, spike duty cycle D<0.01, spike duration <1us | 3 |
| Gate-source voltage | VGSS | -10 | | 15 | V | | 3 |
| Total power dissipation | Ptot | | | 63 | W | @TC = 25°C | 3 |
| Drain current (continuous) | ID | | | 8 | A | TC = 25°C operation | 3 |
| Drain current (continuous) | ID | | | 5 | A | TC = 100°C operation | 3 |
| Pulsed drain current | IDM | | | 13 | A | pulse width: 100us | 3 |
| Operating temperature | TJ | -55 | | 150 | °C | | 3 |
| Storage temperature | TS | -55 | | 150 | °C | | 3 |
| Soldering peak temperature | TSOLD | | | 260 | °C | For 10 sec., 1.6mm from the case | 3 |
| Thermal resistance junction-ambient | RΘJA | | 42 | | °C/W | | 3 |
| Thermal resistance junction-case | RΘJC | | 2.1 | | °C/W | | 3 |
| Input capacitance | CISS | | 90 | | pF | VGS=0V, VDS=400V, f=1MHz | 4 |
| Output capacitance | COSS | | 50 | | pF | VGS=0V, VDS=400V, f=1MHz | 4 |
| Reverse transfer capacitance | CRSS | | 1 | | pF | VGS=0V, VDS=400V, f=1MHz | 4 |
| Gate charge | QG | | 1.6 | | nC | VGS=0~10V, VDS =400V, IDS =10A | 4 |
| Gate-source charge | QGS | | 0.5 | | nC | VGS=0~10V, VDS =400V, IDS =10A | 4 |
| Output charge | QOSS | | 14 | | nC | VGS=0V, VDS=0~400V | 4 |
| Turn-on delay time | td(on) | | 3.5 | | ns | VDS=400V, VGS =0 to 12V, IDS=7A ,RG =25Ω | 4 |
| Turn-off delay time | td(off) | | 7 | | ns | VDS=400V, VGS =0 to 12V, IDS=7A ,RG =25Ω | 4 |
| Reverse recovery charge | QRR | | 0 | | nC | VGS =-10V, VDS =0V | 4 |
## CAD (KiCad official)
- Symbol: `YHJ-65H225DDC`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `yhj-65h225ddc-etched.step` / `yhj-65h225ddc-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yhj-65h225ddc.step` / `yhj-65h225ddc.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [NITRIDE datasheet](docs/yhj-65h225ddc-datasheet.pdf) (12 pp, sha256 `929e566348240077`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/yhj-65h225ddc-datasheet.pdf)