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YHJ-65H225DDC

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NITRIDE GaN Transistors(GaN HEMT), DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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YHJ-65H225DDC

NITRIDE · GaN Transistors(GaN HEMT) · DFN-8(5x6)

YHJ-65H225DDC from NITRIDE, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal, 650 V drain-source rating, tied with pins 2-4.
2 D passive Drain terminal, 650 V drain-source rating, tied with pins 1, 3, 4.
3 D passive Drain terminal, 650 V drain-source rating, tied with pins 1, 2, 4.
4 D passive Drain terminal, 650 V drain-source rating, tied with pins 1-3.
5 S passive Source terminal, tied with pins 6-7 and the exposed source pad.
6 S passive Source terminal, tied with pins 5, 7, 8 and the exposed source pad.
7 S passive Source terminal, tied with pins 5, 6 and the exposed source pad.
8 G input Gate drive input, gate-source voltage range -10 V to +15 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer NITRIDE
Package DFN-8(5x6)
Category Gallium Nitride (GaN) Devices
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage V(BL)DSS 650 V VGS=0V 4
Gate threshold voltage VGS(th) 1.2 1.6 2 V VDS= 10V ,ID=1mA 4
Static drain-source on-resistance RDS(on) 215 250 mΩ VGS=10V, ID=5A, TJ =25°C 4
Static drain-source on-resistance RDS(on) 475 mΩ VGS=10V, ID=5A, TJ =150°C 4
Drain-source leakage current IDSS 0.5 12 A VGS =0V, VDS =650V, TJ=25°C 4
Drain-source leakage current IDSS 100 A VGS =0V, VDS =650V, TJ=150°C 4
Drain-source voltage VDSS 650 V 3
Transient drain to source voltage V(TR)DSS 800 V In off-state, spike duty cycle D<0.01, spike duration <1us 3
Gate-source voltage VGSS -10 15 V 3
Total power dissipation Ptot 63 W @TC = 25°C 3
Drain current (continuous) ID 8 A TC = 25°C operation 3
Drain current (continuous) ID 5 A TC = 100°C operation 3
Pulsed drain current IDM 13 A pulse width: 100us 3
Operating temperature TJ -55 150 °C 3
Storage temperature TS -55 150 °C 3
Soldering peak temperature TSOLD 260 °C For 10 sec., 1.6mm from the case 3
Thermal resistance junction-ambient RΘJA 42 °C/W 3
Thermal resistance junction-case RΘJC 2.1 °C/W 3
Input capacitance CISS 90 pF VGS=0V, VDS=400V, f=1MHz 4
Output capacitance COSS 50 pF VGS=0V, VDS=400V, f=1MHz 4
Reverse transfer capacitance CRSS 1 pF VGS=0V, VDS=400V, f=1MHz 4
Gate charge QG 1.6 nC VGS=0~10V, VDS =400V, IDS =10A 4
Gate-source charge QGS 0.5 nC VGS=0~10V, VDS =400V, IDS =10A 4
Output charge QOSS 14 nC VGS=0V, VDS=0~400V 4
Turn-on delay time td(on) 3.5 ns VDS=400V, VGS =0 to 12V, IDS=7A ,RG =25Ω 4
Turn-off delay time td(off) 7 ns VDS=400V, VGS =0 to 12V, IDS=7A ,RG =25Ω 4
Reverse recovery charge QRR 0 nC VGS =-10V, VDS =0V 4

CAD (KiCad official)

  • Symbol: YHJ-65H225DDC
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: yhj-65h225ddc-etched.step / yhj-65h225ddc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yhj-65h225ddc.step / yhj-65h225ddc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NITRIDE datasheet (12 pp, sha256 929e566348240077, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF