# YFW8N65AD

**YFW** · MOSFETs · TO-252

YFW8N65AD from YFW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±30 V, threshold VGS(th) 2 to 4 V at VDS = VGS, ID = 250 μA. |
| 2 | D | passive | Drain, also connected to the mounting tab (tab labelled 2); VDS rated 650 V, continuous ID 8 A at 25°C and pulsed IDM 32 A. |
| 3 | S | passive | Source; body-diode continuous current IS up to 8 A and RDS(on) 0.95 Ω typ (1.15 Ω max) at VGS = 10 V, ID = 4 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS = 650 V, VGS = 0 V | 2 |
| Drain-Source Leakage Current (125°C) | IDSS |  |  | 10 | uA | VDS = 520 V, Tc = 125°C | 2 |
| Gate Leakage Current | IGSS | -100 |  | 100 | nA | VGS = ± 30 V, VDS = 0 V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.95 | 1.15 | Ω | VGS = 10 V, ID = 4 A | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 8 | A |  | 3 |
| Maximum Body-Diode Pulsed Current | ISM |  |  | 32 | A |  | 3 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.5 | V | ISD = 8 A | 3 |
| Drain-Source Voltage | VDS |  |  | 650 | V |  | 2 |
| Gate-Source Voltage | VGS | -30 |  | 30 | V |  | 2 |
| Continuous Drain Current | ID |  |  | 8 | A |  | 2 |
| Continuous Drain Current (TC = 100°C) | ID |  |  | 5.6 | A | TC = 100°C | 2 |
| Pulsed Drain Current | IDM |  |  | 32 | A |  | 2 |
| Power Dissipation | PD |  |  | 100 | W |  | 2 |
| Derate above 25°C | PD |  | 1.16 |  | W/°C | Derate above 25°C | 2 |
| Single Pulse Avalanche Energy | EAS |  |  | 600 | mJ |  | 2 |
| Avalanche Current | IAR |  |  | 8 | A |  | 2 |
| Repetitive Avalanche Energy | EAS |  |  | 15 | mJ |  | 2 |
| Operating Temperature Range (Junction) | TJ |  |  | 150 | °C |  | 2 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 2 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 0.76 | °C/W |  | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 62.5 | °C/W |  | 2 |

## CAD (KiCad official)

- Symbol: `YFW8N65AD`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `yfw8n65ad-etched.step` / `yfw8n65ad-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yfw8n65ad.step` / `yfw8n65ad.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [YFW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590233197750886400) (7 pp, sha256 `279660721df4d230`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/yfw8n65ad-datasheet.pdf)