component
YFW8N65AD
Public Made by Adomby adom
YFW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
| yfw8n65ad-etched.glb | 6d ago |
| yfw8n65ad-etched.step | 6d ago |
| yfw8n65ad-hero.glb | 6d ago |
| yfw8n65ad-hero.overlay.json | 6d ago |
| yfw8n65ad.glb | 6d ago |
| yfw8n65ad.kicad_mod | 6d ago |
| yfw8n65ad.kicad_sym | 6d ago |
| yfw8n65ad.lbr | 6d ago |
| yfw8n65ad.step | 6d ago |
YFW8N65AD
YFW · MOSFETs · TO-252
YFW8N65AD from YFW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±30 V, threshold VGS(th) 2 to 4 V at VDS = VGS, ID = 250 μA. |
| 2 | D | passive | Drain, also connected to the mounting tab (tab labelled 2); VDS rated 650 V, continuous ID 8 A at 25°C and pulsed IDM 32 A. |
| 3 | S | passive | Source; body-diode continuous current IS up to 8 A and RDS(on) 0.95 Ω typ (1.15 Ω max) at VGS = 10 V, ID = 4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS = 650 V, VGS = 0 V | 2 | ||
| Drain-Source Leakage Current (125°C) | IDSS | 10 | uA | VDS = 520 V, Tc = 125°C | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = ± 30 V, VDS = 0 V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.95 | 1.15 | Ω | VGS = 10 V, ID = 4 A | 2 | |
| Maximum Body-Diode Continuous Current | IS | 8 | A | 3 | |||
| Maximum Body-Diode Pulsed Current | ISM | 32 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.5 | V | ISD = 8 A | 3 | ||
| Drain-Source Voltage | VDS | 650 | V | 2 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 2 | ||
| Continuous Drain Current | ID | 8 | A | 2 | |||
| Continuous Drain Current (TC = 100°C) | ID | 5.6 | A | TC = 100°C | 2 | ||
| Pulsed Drain Current | IDM | 32 | A | 2 | |||
| Power Dissipation | PD | 100 | W | 2 | |||
| Derate above 25°C | PD | 1.16 | W/°C | Derate above 25°C | 2 | ||
| Single Pulse Avalanche Energy | EAS | 600 | mJ | 2 | |||
| Avalanche Current | IAR | 8 | A | 2 | |||
| Repetitive Avalanche Energy | EAS | 15 | mJ | 2 | |||
| Operating Temperature Range (Junction) | TJ | 150 | °C | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.76 | °C/W | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
YFW8N65AD - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
yfw8n65ad-etched.step/yfw8n65ad-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yfw8n65ad.step/yfw8n65ad.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YFW datasheet (7 pp, sha256
279660721df4d230, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).