# YFW6G03S

**YFW** · MOSFETs · SOP-8

YFW6G03S from YFW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; the datasheet lists VDS 30V (N-Ch) and -30V (P-Ch) ratings and does not map channels to pins in text. |
| 2 | G1 | input | Gate of MOSFET 1 with a maximum VGS of ±20V and gate threshold of 1.0 to 2.5V (N-Ch) or -1.0 to -2.5V (P-Ch). |
| 3 | S2 | passive | Source of MOSFET 2; the datasheet lists VDS 30V (N-Ch) and -30V (P-Ch) ratings and does not map channels to pins in text. |
| 4 | G2 | input | Gate of MOSFET 2 with a maximum VGS of ±20V and gate threshold of 1.0 to 2.5V (N-Ch) or -1.0 to -2.5V (P-Ch). |
| 5 | D2 | passive | Drain of MOSFET 2, connected internally with pin 6; continuous drain current is 10A (N-Ch) or -7.6A (P-Ch) at TC=25°C. |
| 6 | D2 | passive | Drain of MOSFET 2, connected internally with pin 5; continuous drain current is 10A (N-Ch) or -7.6A (P-Ch) at TC=25°C. |
| 7 | D1 | passive | Drain of MOSFET 1, connected internally with pin 8; continuous drain current is 10A (N-Ch) or -7.6A (P-Ch) at TC=25°C. |
| 8 | D1 | passive | Drain of MOSFET 1, connected internally with pin 7; continuous drain current is 10A (N-Ch) or -7.6A (P-Ch) at TC=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS |  |  | 30 | V |  | 1 |
| Drain-Source Voltage (P-Ch) | VDS |  |  | -30 | V |  | 1 |
| Gate-Source Voltage (N-Ch) | VGS | -20 |  | 20 | V |  | 1 |
| Gate-Source Voltage (P-Ch) | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current (N-Ch) | ID |  |  | 10 | A | VGS @ 10V, @TC=25℃ | 1 |
| Continuous Drain Current (P-Ch) | ID |  |  | -7.6 | A | VGS @ 10V, @TC=25℃ | 1 |
| Continuous Drain Current (N-Ch) | ID |  |  | 6 | A | VGS @ 10V, @TC=100℃ | 1 |
| Continuous Drain Current (P-Ch) | ID |  |  | -5.9 | A | VGS @ 10V, @TC=100℃ | 1 |
| Pulsed Drain Current (N-Ch) | IDM |  |  | 20 | A |  | 1 |
| Pulsed Drain Current (P-Ch) | IDM |  |  | -15 | A |  | 1 |
| Single Pulse Avalanche Energy (N-Ch) | EAS |  |  | 22 | mJ |  | 1 |
| Single Pulse Avalanche Energy (P-Ch) | EAS |  |  | 45 | mJ |  | 1 |
| Avalanche Current (N-Ch) | IAS |  |  | 21 | A |  | 1 |
| Avalanche Current (P-Ch) | IAS |  |  | -30 | A |  | 1 |
| Total Power Dissipation (N-Ch) | PD |  |  | 2 | W | @TC=25℃ | 1 |
| Total Power Dissipation (P-Ch) | PD |  |  | 2 | W | @TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  | 62 |  | °C/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  | 5 |  | °C/W |  | 1 |
| Drain-Source Breakdown Voltage (N-Ch) | BVDSS | 30 |  |  | V | VGS=0V, ID=250uA | 2 |
| Gate Resistance (N-Ch) | Rg |  | 2.5 | 5 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Static Drain-Source On-Resistance (N-Ch) | RDS(ON) |  | 20 | 25 | mΩ | VGS=10V, ID=10A | 2 |
| Static Drain-Source On-Resistance (N-Ch) | RDS(ON) |  | 30 | 38 | mΩ | VGS=4.5V, ID=5A | 2 |
| Gate Threshold Voltage (N-Ch) | VGS(th) | 1 | 1.7 | 2.5 | V | VDS=VGS, ID=250uA | 2 |
| Drain-Source Leakage Current (N-Ch) | IDSS |  |  | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current (N-Ch) | IDSS |  |  | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current (N-Ch) | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current (N-Ch) | IS |  |  | 10 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current (N-Ch) | ISM |  |  | 20 | A |  | 2 |
| Diode Forward Voltage (N-Ch) | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Drain-Source Breakdown Voltage (P-Ch) | BVDSS | -30 |  |  | V | VGS=0V, ID=-250uA | 3 |
| Gate Resistance (P-Ch) | Rg |  | 15 | 30 | Ω | VDS=0V, VGS=0V, f=1MHz | 3 |
| Static Drain-Source On-Resistance (P-Ch) | RDS(ON) |  | 39 | 48 | mΩ | VGS=-10V, ID=-7A | 3 |
| Static Drain-Source On-Resistance (P-Ch) | RDS(ON) |  | 53 | 58 | mΩ | VGS=-4.5V, ID=-5A | 3 |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID=-250uA | 3 |
| Drain-Source Leakage Current (P-Ch) | IDSS |  |  | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 3 |
| Drain-Source Leakage Current (P-Ch) | IDSS |  |  | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 3 |
| Gate-Source Leakage Current (P-Ch) | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Continuous Source Current (P-Ch) | IS |  |  | -7.6 | A | VG=VD=0V, Force Current | 3 |
| Pulsed Source Current (P-Ch) | ISM |  |  | -15 | A |  | 3 |
| Diode Forward Voltage (P-Ch) | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |

## CAD (KiCad official)

- Symbol: `YFW6G03S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `yfw6g03s-etched.step` / `yfw6g03s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yfw6g03s.step` / `yfw6g03s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [YFW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603184267149668352) (8 pp, sha256 `0ccf2edb0b4b023f`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/yfw6g03s-datasheet.pdf)