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YFW6G03S

Public Made by Adom

by adom

YFW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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YFW6G03S

YFW · MOSFETs · SOP-8

YFW6G03S from YFW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; the datasheet lists VDS 30V (N-Ch) and -30V (P-Ch) ratings and does not map channels to pins in text.
2 G1 input Gate of MOSFET 1 with a maximum VGS of ±20V and gate threshold of 1.0 to 2.5V (N-Ch) or -1.0 to -2.5V (P-Ch).
3 S2 passive Source of MOSFET 2; the datasheet lists VDS 30V (N-Ch) and -30V (P-Ch) ratings and does not map channels to pins in text.
4 G2 input Gate of MOSFET 2 with a maximum VGS of ±20V and gate threshold of 1.0 to 2.5V (N-Ch) or -1.0 to -2.5V (P-Ch).
5 D2 passive Drain of MOSFET 2, connected internally with pin 6; continuous drain current is 10A (N-Ch) or -7.6A (P-Ch) at TC=25°C.
6 D2 passive Drain of MOSFET 2, connected internally with pin 5; continuous drain current is 10A (N-Ch) or -7.6A (P-Ch) at TC=25°C.
7 D1 passive Drain of MOSFET 1, connected internally with pin 8; continuous drain current is 10A (N-Ch) or -7.6A (P-Ch) at TC=25°C.
8 D1 passive Drain of MOSFET 1, connected internally with pin 7; continuous drain current is 10A (N-Ch) or -7.6A (P-Ch) at TC=25°C.

Key specifications

Parameter Value
Manufacturer YFW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Ch) VDS 30 V 1
Drain-Source Voltage (P-Ch) VDS -30 V 1
Gate-Source Voltage (N-Ch) VGS -20 20 V 1
Gate-Source Voltage (P-Ch) VGS -20 20 V 1
Continuous Drain Current (N-Ch) ID 10 A VGS @ 10V, @TC=25℃ 1
Continuous Drain Current (P-Ch) ID -7.6 A VGS @ 10V, @TC=25℃ 1
Continuous Drain Current (N-Ch) ID 6 A VGS @ 10V, @TC=100℃ 1
Continuous Drain Current (P-Ch) ID -5.9 A VGS @ 10V, @TC=100℃ 1
Pulsed Drain Current (N-Ch) IDM 20 A 1
Pulsed Drain Current (P-Ch) IDM -15 A 1
Single Pulse Avalanche Energy (N-Ch) EAS 22 mJ 1
Single Pulse Avalanche Energy (P-Ch) EAS 45 mJ 1
Avalanche Current (N-Ch) IAS 21 A 1
Avalanche Current (P-Ch) IAS -30 A 1
Total Power Dissipation (N-Ch) PD 2 W @TC=25℃ 1
Total Power Dissipation (P-Ch) PD 2 W @TC=25℃ 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Thermal Resistance Junction-Ambient RθJA 62 °C/W 1
Thermal Resistance Junction-Case RθJC 5 °C/W 1
Drain-Source Breakdown Voltage (N-Ch) BVDSS 30 V VGS=0V, ID=250uA 2
Gate Resistance (N-Ch) Rg 2.5 5 Ω VDS=0V, VGS=0V, f=1MHz 2
Static Drain-Source On-Resistance (N-Ch) RDS(ON) 20 25 mΩ VGS=10V, ID=10A 2
Static Drain-Source On-Resistance (N-Ch) RDS(ON) 30 38 mΩ VGS=4.5V, ID=5A 2
Gate Threshold Voltage (N-Ch) VGS(th) 1 1.7 2.5 V VDS=VGS, ID=250uA 2
Drain-Source Leakage Current (N-Ch) IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current (N-Ch) IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current (N-Ch) IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current (N-Ch) IS 10 A VG=VD=0V, Force Current 2
Pulsed Source Current (N-Ch) ISM 20 A 2
Diode Forward Voltage (N-Ch) VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Breakdown Voltage (P-Ch) BVDSS -30 V VGS=0V, ID=-250uA 3
Gate Resistance (P-Ch) Rg 15 30 Ω VDS=0V, VGS=0V, f=1MHz 3
Static Drain-Source On-Resistance (P-Ch) RDS(ON) 39 48 mΩ VGS=-10V, ID=-7A 3
Static Drain-Source On-Resistance (P-Ch) RDS(ON) 53 58 mΩ VGS=-4.5V, ID=-5A 3
Gate Threshold Voltage (P-Ch) VGS(th) -1 -1.6 -2.5 V VDS=VGS, ID=-250uA 3
Drain-Source Leakage Current (P-Ch) IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current (P-Ch) IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 3
Gate-Source Leakage Current (P-Ch) IGSS -100 100 nA VGS=±20V, VDS=0V 3
Continuous Source Current (P-Ch) IS -7.6 A VG=VD=0V, Force Current 3
Pulsed Source Current (P-Ch) ISM -15 A 3
Diode Forward Voltage (P-Ch) VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 3

CAD (KiCad official)

  • Symbol: YFW6G03S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: yfw6g03s-etched.step / yfw6g03s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yfw6g03s.step / yfw6g03s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: YFW datasheet (8 pp, sha256 0ccf2edb0b4b023f, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF