component

YFW28N50AP

Public Made by Adom

by adom

YFW MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsyfw28n50apfactory-2.0.0extractor-text

Verified YFW28N50AP

by Ray · last 7 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

7 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: YFW28N50AP · TO-247 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 5-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-c5ec4bob/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ yfw28n50ap.kicad_sym✓ yfw28n50ap.kicad_mod✓ yfw28n50ap.step
Spot something wrong? Report it as an issue Propose a fix Records are signed by members of adom.
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
yfw28n50ap / README.md
History Download
Ray Publish 0.1.0 0c09920 5h ago

YFW28N50AP

YFW · MOSFETs · TO-247

YFW28N50AP from YFW, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated ±30 V, gate leakage is max ±100 nA at VGS = ±30 V, and the threshold is 2 to 4 V at 250 µA.
2 D passive Drain (also connected to the mounting tab per the package drawing); drain-source voltage is rated 500 V with continuous current of 28 A at 25°C and 100 A pulsed.
3 S passive Source; RDS(on) is 0.14 Ω typ and 0.18 Ω max at VGS = 10 V, ID = 14 A, and the body diode carries up to 25 A continuous.

Key specifications

Parameter Value
Manufacturer YFW
Package TO-247
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 500 V Tc=25°C (maximum ratings header) 2
Gate-Source Voltage VGS -30 30 V Printed as ±30 V 2
Continuous Drain Current ID 28 A Tc=25°C (maximum ratings header) 2
Continuous Drain Current ID 19 A TC = 100°C 2
Pulsed Drain Current IDM 100 A Note 1 2
Power Dissipation PD 300 W Tc=25°C (maximum ratings header) 2
Single Pulse Avalanche Energy EAS 1500 mJ Note 2 (IAS = 28 A, VDD = 50 V, L = 4mH, RG = 25Ω, starting TJ = 25°C) 2
Avalanche Current IAR 28 A Note 1 2
Repetitive Avalanche Energy EAS 32 mJ Note 1 2
Operating Temperature Range TJ 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Thermal Resistance, Junction to Case RθJC 0.42 °C/W 2
Thermal Resistance, Junction to Ambient RθJA 40 °C/W 2
Drain-Source Breakdown Voltage BVDSS 500 V VGS = 0 V, ID = 250 μA 2
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.5 V/°C ID=250μA (Referenced to 25°C) 2
Drain-Source Leakage Current IDSS 1 uA VDS = 500 V, VGS = 0 V 2
Drain-Source Leakage Current IDSS 10 uA VDS = 400 V, Tc = 125°C 2
Gate Leakage Current IGSS -100 100 nA VGS = ± 30 V, VDS = 0 V 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Drain-Source On-State Resistance RDS(on) 0.14 0.18 Ω VGS = 10 V, ID = 14A 2
Forward Transconductance gfs 18 S VDS = 15 V, ID = 14 A 2
Input Capacitance Ciss 4611 pF VGS = 0 V, VDS = 25 V, f = 1MHz 2
Output Capacitance Coss 225 pF VGS = 0 V, VDS = 25 V, f = 1MHz 2
Reverse Transfer Capacitance Crss 12 pF VGS = 0 V, VDS = 25 V, f = 1MHz 2
Turn-on Delay Time td(ON) 37.2 nS ID = 28, VDD = 250V, RG=25Ω(Note3,4) 2
Rise Time tr 64.4 nS ID = 28, VDD = 250V, RG=25Ω(Note3,4) 2
Turn-Off Delay Time td(OFF) 86.8 nS ID = 28, VDD = 250V, RG=25Ω(Note3,4) 2
Fall Time tf 46 nS ID = 28, VDD = 250V, RG=25Ω(Note3,4) 2
Total Gate Charge QG 121 nC ID =28 A, VDD = 400 V, VGS = 10 V(Note3,4) 2
Gate to Source Charge QGS 20 nC ID =28 A, VDD = 400 V, VGS = 10 V(Note3,4) 2
Gate to Drain Charge QGD 32 nC ID =28 A, VDD = 400 V, VGS = 10 V(Note3,4) 2
Maximum Body-Diode Continuous Current IS 25 A Ta=25°C (source-drain diode header) 3
Maximum Body-Diode Pulsed Current ISM 100 A Ta=25°C (source-drain diode header) 3
Drain-Source Diode Forward Voltage VSD 1.5 V ISD =28A 3
Reverse Recovery Time trr 490 nS ISD = 28A, VGS = 0 V, dIF / dt = 100 A/μs 3
Reverse Recovery Charge Qrr 6.2 uC ISD = 28A, VGS = 0 V, dIF / dt = 100 A/μs 3

CAD (KiCad official)

  • Symbol: YFW28N50AP
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: yfw28n50ap-etched.step / yfw28n50ap-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yfw28n50ap.step / yfw28n50ap.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: YFW datasheet (5 pp, sha256 9142cccb7466253b, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF