component
YFW28N50AP
Public Made by Adomby adom
YFW MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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YFW28N50AP
YFW · MOSFETs · TO-247
YFW28N50AP from YFW, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±30 V, gate leakage is max ±100 nA at VGS = ±30 V, and the threshold is 2 to 4 V at 250 µA. |
| 2 | D | passive | Drain (also connected to the mounting tab per the package drawing); drain-source voltage is rated 500 V with continuous current of 28 A at 25°C and 100 A pulsed. |
| 3 | S | passive | Source; RDS(on) is 0.14 Ω typ and 0.18 Ω max at VGS = 10 V, ID = 14 A, and the body diode carries up to 25 A continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | TO-247 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 500 | V | Tc=25°C (maximum ratings header) | 2 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | Printed as ±30 V | 2 | |
| Continuous Drain Current | ID | 28 | A | Tc=25°C (maximum ratings header) | 2 | ||
| Continuous Drain Current | ID | 19 | A | TC = 100°C | 2 | ||
| Pulsed Drain Current | IDM | 100 | A | Note 1 | 2 | ||
| Power Dissipation | PD | 300 | W | Tc=25°C (maximum ratings header) | 2 | ||
| Single Pulse Avalanche Energy | EAS | 1500 | mJ | Note 2 (IAS = 28 A, VDD = 50 V, L = 4mH, RG = 25Ω, starting TJ = 25°C) | 2 | ||
| Avalanche Current | IAR | 28 | A | Note 1 | 2 | ||
| Repetitive Avalanche Energy | EAS | 32 | mJ | Note 1 | 2 | ||
| Operating Temperature Range | TJ | 150 | °C | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.42 | °C/W | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 40 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | 0.5 | V/°C | ID=250μA (Referenced to 25°C) | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS = 500 V, VGS = 0 V | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS = 400 V, Tc = 125°C | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = ± 30 V, VDS = 0 V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.14 | 0.18 | Ω | VGS = 10 V, ID = 14A | 2 | |
| Forward Transconductance | gfs | 18 | S | VDS = 15 V, ID = 14 A | 2 | ||
| Input Capacitance | Ciss | 4611 | pF | VGS = 0 V, VDS = 25 V, f = 1MHz | 2 | ||
| Output Capacitance | Coss | 225 | pF | VGS = 0 V, VDS = 25 V, f = 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 12 | pF | VGS = 0 V, VDS = 25 V, f = 1MHz | 2 | ||
| Turn-on Delay Time | td(ON) | 37.2 | nS | ID = 28, VDD = 250V, RG=25Ω(Note3,4) | 2 | ||
| Rise Time | tr | 64.4 | nS | ID = 28, VDD = 250V, RG=25Ω(Note3,4) | 2 | ||
| Turn-Off Delay Time | td(OFF) | 86.8 | nS | ID = 28, VDD = 250V, RG=25Ω(Note3,4) | 2 | ||
| Fall Time | tf | 46 | nS | ID = 28, VDD = 250V, RG=25Ω(Note3,4) | 2 | ||
| Total Gate Charge | QG | 121 | nC | ID =28 A, VDD = 400 V, VGS = 10 V(Note3,4) | 2 | ||
| Gate to Source Charge | QGS | 20 | nC | ID =28 A, VDD = 400 V, VGS = 10 V(Note3,4) | 2 | ||
| Gate to Drain Charge | QGD | 32 | nC | ID =28 A, VDD = 400 V, VGS = 10 V(Note3,4) | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 25 | A | Ta=25°C (source-drain diode header) | 3 | ||
| Maximum Body-Diode Pulsed Current | ISM | 100 | A | Ta=25°C (source-drain diode header) | 3 | ||
| Drain-Source Diode Forward Voltage | VSD | 1.5 | V | ISD =28A | 3 | ||
| Reverse Recovery Time | trr | 490 | nS | ISD = 28A, VGS = 0 V, dIF / dt = 100 A/μs | 3 | ||
| Reverse Recovery Charge | Qrr | 6.2 | uC | ISD = 28A, VGS = 0 V, dIF / dt = 100 A/μs | 3 |
CAD (KiCad official)
- Symbol:
YFW28N50AP - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
yfw28n50ap-etched.step/yfw28n50ap-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yfw28n50ap.step/yfw28n50ap.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YFW datasheet (5 pp, sha256
9142cccb7466253b, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).