# YFW120N10AD

**YFW** · MOSFETs · TO-252

YFW120N10AD from YFW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20V with a threshold of 1V to 3V (VDS=VGS, ID=250µA). |
| 2 | D | passive | Drain, also the exposed mounting tab; rated for VDS 100V and continuous drain current 120A (300A pulsed). |
| 3 | S | passive | Source; body-diode continuous current up to 120A, with typical RDS(ON) of 4.6mΩ at VGS=10V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 120 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | 300 | A | Note1 | 1 |
| Power Dissipation | PD |  |  | 148 | W |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 130 | mJ | Note1 | 1 |
| Operating Temperature Range (junction) | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance, Junction to case | RθJC |  | 0.84 |  | °C/W |  | 1 |
| Thermal Resistance, Junction to ambient | RθJA |  | 62 |  | °C/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | μA | VDS=100V, VGS=0V | 2 |
| Gate Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 |  | 3 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source on-State Resistance | RDS(ON) |  | 4.6 | 6 | mΩ | VGS=10V, ID=1A | 2 |
| Drain-Source on-State Resistance | RDS(ON) |  | 6.3 | 9 | mΩ | VGS=4.5V, ID=1A | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 120 | A |  | 2 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.3 | V | VGS=0V, IS=30A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `YFW120N10AD`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `yfw120n10ad-etched.step` / `yfw120n10ad-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yfw120n10ad.step` / `yfw120n10ad.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [YFW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590457722786516992) (5 pp, sha256 `cd1296db11be7ec0`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/yfw120n10ad-datasheet.pdf)