component
YFW120N10AD
Public Made by Adomby adom
YFW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownYFW120N10AD
YFW · MOSFETs · TO-252
YFW120N10AD from YFW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20V with a threshold of 1V to 3V (VDS=VGS, ID=250µA). |
| 2 | D | passive | Drain, also the exposed mounting tab; rated for VDS 100V and continuous drain current 120A (300A pulsed). |
| 3 | S | passive | Source; body-diode continuous current up to 120A, with typical RDS(ON) of 4.6mΩ at VGS=10V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 120 | A | 1 | |||
| Pulsed Drain Current | IDM | 300 | A | Note1 | 1 | ||
| Power Dissipation | PD | 148 | W | 1 | |||
| Single Pulse Avalanche Energy | EAS | 130 | mJ | Note1 | 1 | ||
| Operating Temperature Range (junction) | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to case | RθJC | 0.84 | °C/W | 1 | |||
| Thermal Resistance, Junction to ambient | RθJA | 62 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | μA | VDS=100V, VGS=0V | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 3 | V | VDS=VGS, ID=250μA | 2 | |
| Drain-Source on-State Resistance | RDS(ON) | 4.6 | 6 | mΩ | VGS=10V, ID=1A | 2 | |
| Drain-Source on-State Resistance | RDS(ON) | 6.3 | 9 | mΩ | VGS=4.5V, ID=1A | 2 | |
| Maximum Body-Diode Continuous Current | IS | 120 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.3 | V | VGS=0V, IS=30A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
YFW120N10AD - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
yfw120n10ad-etched.step/yfw120n10ad-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yfw120n10ad.step/yfw120n10ad.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YFW datasheet (5 pp, sha256
cd1296db11be7ec0, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).