component
XR4913
Public Made by Adomby adom
XNRUSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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XR4913
XNRUSEMI · MOSFETs · SOP-8
XR4913 from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; MOSFET rated VDS -20V, continuous ID -9.0A at TA=25℃. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; gate-source voltage rating ±12V, threshold -0.4 to -1.0V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2; MOSFET rated VDS -20V, continuous ID -9.0A at TA=25℃. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; gate-source voltage rating ±12V, threshold -0.4 to -1.0V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2; pulsed drain current up to -30A, RDS(on) 26mΩ typ at VGS -4.5V. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2, tied to pin 5; pulsed drain current up to -30A. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1, tied to pin 8; pulsed drain current up to -30A. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1; pulsed drain current up to -30A, RDS(on) 26mΩ typ at VGS -4.5V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XNRUSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | -9 | A | VGS @ -4.5V, TA=25℃ | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | -5 | A | VGS @ -4.5V, TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.31 | W | TA=25℃ | 1 | ||
| Total Power Dissipation | PD@TA=70℃ | 0.84 | W | TA=70℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 125 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS=0V, ID= -250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS= -20V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±12V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.7 | -1 | V | VDS=VGS, ID= -250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 26 | 33 | mΩ | VGS= -4.5V, ID= -4.1A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 35 | 51 | mΩ | VGS= -2.5V, ID= -3A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -9 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -16 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS= -4.1A | 2 |
CAD (KiCad official)
- Symbol:
XR4913 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
xr4913-etched.step/xr4913-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);xr4913.step/xr4913.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XNRUSEMI datasheet (5 pp, sha256
72e1cf195f30f0ad, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# XR4913
**XNRUSEMI** · MOSFETs · SOP-8
XR4913 from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; MOSFET rated VDS -20V, continuous ID -9.0A at TA=25℃. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; gate-source voltage rating ±12V, threshold -0.4 to -1.0V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2; MOSFET rated VDS -20V, continuous ID -9.0A at TA=25℃. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; gate-source voltage rating ±12V, threshold -0.4 to -1.0V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2; pulsed drain current up to -30A, RDS(on) 26mΩ typ at VGS -4.5V. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2, tied to pin 5; pulsed drain current up to -30A. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1, tied to pin 8; pulsed drain current up to -30A. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1; pulsed drain current up to -30A, RDS(on) 26mΩ typ at VGS -4.5V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XNRUSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -20 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID@TA=25℃ | | | -9 | A | VGS @ -4.5V, TA=25℃ | 1 |
| Continuous Drain Current | ID@TA=70℃ | | | -5 | A | VGS @ -4.5V, TA=70℃ | 1 |
| Pulsed Drain Current | IDM | | | -30 | A | | 1 |
| Total Power Dissipation | PD@TA=25℃ | | | 1.31 | W | TA=25℃ | 1 |
| Total Power Dissipation | PD@TA=70℃ | | | 0.84 | W | TA=70℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 125 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | | | V | VGS=0V, ID= -250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS= -20V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS= ±12V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.7 | -1 | V | VDS=VGS, ID= -250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 26 | 33 | mΩ | VGS= -4.5V, ID= -4.1A | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 35 | 51 | mΩ | VGS= -2.5V, ID= -3A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS | | | -9 | A | | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | | | -16 | A | | 2 |
| Drain to Source Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS= -4.1A | 2 |
## CAD (KiCad official)
- Symbol: `XR4913`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `xr4913-etched.step` / `xr4913-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `xr4913.step` / `xr4913.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [XNRUSEMI datasheet](docs/xr4913-datasheet.pdf) (5 pp, sha256 `72e1cf195f30f0ad`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/xr4913-datasheet.pdf)