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XR4913

XNRUSEMI · MOSFETs · SOP-8

XR4913 from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1; MOSFET rated VDS -20V, continuous ID -9.0A at TA=25℃.
2 G1 input Gate of P-channel MOSFET 1; gate-source voltage rating ±12V, threshold -0.4 to -1.0V.
3 S2 passive Source of P-channel MOSFET 2; MOSFET rated VDS -20V, continuous ID -9.0A at TA=25℃.
4 G2 input Gate of P-channel MOSFET 2; gate-source voltage rating ±12V, threshold -0.4 to -1.0V.
5 D2 passive Drain of P-channel MOSFET 2; pulsed drain current up to -30A, RDS(on) 26mΩ typ at VGS -4.5V.
6 D2 passive Drain of P-channel MOSFET 2, tied to pin 5; pulsed drain current up to -30A.
7 D1 passive Drain of P-channel MOSFET 1, tied to pin 8; pulsed drain current up to -30A.
8 D1 passive Drain of P-channel MOSFET 1; pulsed drain current up to -30A, RDS(on) 26mΩ typ at VGS -4.5V.

Key specifications

Parameter Value
Manufacturer XNRUSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID@TA=25℃ -9 A VGS @ -4.5V, TA=25℃ 1
Continuous Drain Current ID@TA=70℃ -5 A VGS @ -4.5V, TA=70℃ 1
Pulsed Drain Current IDM -30 A 1
Total Power Dissipation PD@TA=25℃ 1.31 W TA=25℃ 1
Total Power Dissipation PD@TA=70℃ 0.84 W TA=70℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 125 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS -20 V VGS=0V, ID= -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS= -20V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±12V 2
Gate Threshold Voltage VGS(th) -0.4 -0.7 -1 V VDS=VGS, ID= -250μA 2
Static Drain-Source on-Resistance RDS(on) 26 33 mΩ VGS= -4.5V, ID= -4.1A 2
Static Drain-Source on-Resistance RDS(on) 35 51 mΩ VGS= -2.5V, ID= -3A 2
Maximum Continuous Drain to Source Diode Forward Current IS -9 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM -16 A 2
Drain to Source Diode Forward Voltage VSD -1.2 V VGS=0V, IS= -4.1A 2

CAD (KiCad official)

  • Symbol: XR4913
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: xr4913-etched.step / xr4913-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); xr4913.step / xr4913.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XNRUSEMI datasheet (5 pp, sha256 72e1cf195f30f0ad, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF