# XR4407A

**XNRUSEMI** · MOSFETs · SOP-8

XR4407A from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied with pins 2 and 3; VDS rated -30 V and continuous drain current -12 A at TA=25℃. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3; VDS rated -30 V and continuous drain current -12 A at TA=25℃. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2; VDS rated -30 V and continuous drain current -12 A at TA=25℃. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage limit ±20 V, threshold VGS(th) -1.0 to -2.5 V at ID=-250μA. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; drain-source voltage -30 V max, pulsed drain current -46 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; drain-source voltage -30 V max, pulsed drain current -46 A. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 8; drain-source voltage -30 V max, pulsed drain current -46 A. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 7; drain-source voltage -30 V max, pulsed drain current -46 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | XNRUSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 |  |  | V | VGS=0V, ID= -250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS= -30V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS= ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID= -250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 9.5 | 14 | mΩ | VGS= -10V, ID= -10A | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 17 | 24 | mΩ | VGS= -4.5V, ID= -5A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | -12 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | -60 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  | -0.8 | -1.2 | V | VGS=0V, IS= -15A | 2 |
| Drain-Source Voltage | VDS |  |  | -30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TA=25℃ |  |  | -12 | A | VGS @ -10V | 1 |
| Continuous Drain Current | ID@TA=70℃ |  |  | -9 | A | VGS @ -10V | 1 |
| Pulsed Drain Current | IDM |  |  | -46 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 55 | mJ |  | 1 |
| Avalanche Current | IAS |  |  | -50 | A |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 4.5 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 75 | ℃/W |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 40 | ℃/W | t≦10s | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 24 | ℃/W |  | 1 |
| Input Capacitance | Ciss |  | 1770 |  | pF | VDS= -15V, VGS=0V, f=1.0MHz | 2 |
| Output Capacitance | Coss |  | 233 |  | pF | VDS= -15V, VGS=0V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 206 |  | pF | VDS= -15V, VGS=0V, f=1.0MHz | 2 |
| Total Gate Charge | Qg |  | 22 |  | nC | VDS= -15V, ID= -5A, VGS= -10V | 2 |
| Gate-Source Charge | Qgs |  | 1 |  | nC | VDS= -15V, ID= -5A, VGS= -10V | 2 |
| Gate-Drain Charge | Qgd |  | 1.8 |  | nC | VDS= -15V, ID= -5A, VGS= -10V | 2 |
| Turn-on Delay Time | td(on) |  | 9 |  | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 2 |
| Turn-on Rise Time | tr |  | 13 |  | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 2 |
| Turn-off Delay Time | td(off) |  | 48 |  | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 2 |
| Turn-off Fall Time | tf |  | 20 |  | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 2 |
| Reverse Recovery Time | trr |  | 64 |  | ns | TJ=25℃, VDD= -24V, IF=-2.8A, dI/dt=-100A/μs | 2 |
| Reverse Recovery Charge | Qrr |  | 25 |  | nC | TJ=25℃, VDD= -24V, IF=-2.8A, dI/dt=-100A/μs | 2 |

## CAD (KiCad official)

- Symbol: `XR4407A`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `xr4407a-etched.step` / `xr4407a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `xr4407a.step` / `xr4407a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [XNRUSEMI datasheet](docs/xr4407a-datasheet.pdf) (6 pp, sha256 `568a4613e912d12e`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/xr4407a-datasheet.pdf)